ZDT79

ZDT795ATA vs ZDT795ATA-CUT TAPE vs ZDT795A

 
PartNumberZDT795ATAZDT795ATA-CUT TAPEZDT795A
DescriptionBipolar Transistors - BJT Dual PNP Medium Power
ManufacturerDiodes Incorporated-Diodes Incorporated
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Arrays
RoHSY--
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSM-8--
Transistor PolarityPNP-PNP
ConfigurationDual-Dual
Collector Emitter Voltage VCEO Max- 140 V--
Collector Base Voltage VCBO- 140 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 250 mV-- 250 mV
Maximum DC Collector Current- 500 mA-- 500 mA
Gain Bandwidth Product fT100 MHz-100 MHz
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesZDT795-ZDT795
Height1.6 mm--
Length6.7 mm--
PackagingReel-Digi-ReelR Alternate Packaging
Width3.7 mm--
BrandDiodes Incorporated--
Pd Power Dissipation2750 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Package Case--SOT-223-8
Mounting Type--Surface Mount
Supplier Device Package--SM8
Power Max--2.75W
Transistor Type--2 PNP (Dual)
Current Collector Ic Max--500mA
Voltage Collector Emitter Breakdown Max--140V
DC Current Gain hFE Min Ic Vce--300 @ 10mA, 2V
Vce Saturation Max Ib Ic--250mV @ 50mA, 500mA
Current Collector Cutoff Max--100nA (ICBO)
Frequency Transition--100MHz
Pd Power Dissipation--2750 mW
Collector Emitter Voltage VCEO Max--- 140 V
Collector Base Voltage VCBO--- 140 V
Emitter Base Voltage VEBO--- 5 V
DC Collector Base Gain hfe Min--300 at 10 mA at 2 V 250 at 200 mA at 2 V 100 at 300 mA at 2 V
DC Current Gain hFE Max--300
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
ZDT795ATA Bipolar Transistors - BJT Dual PNP Medium Power
ZDT795ATC Bipolar Transistors - BJT Dual 140V PNP High G
ZDT795ATA-CUT TAPE Neu und Original
ZDT795ATC TRANS 2PNP 140V 0.5A SM8
ZDT795ATA TRANS 2PNP 140V 0.5A SM8
ZDT795A Neu und Original
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