ZVN421

ZVN4210A vs ZVN4210ASTZ vs ZVN4210GTA

 
PartNumberZVN4210AZVN4210ASTZZVN4210GTA
DescriptionMOSFET N-Chnl 100VMOSFET N-Chnl 100VMOSFET N-Chnl 100V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleSMD/SMT
Package / CaseTO-92-3TO-92-3SOT-223-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V100 V100 V
Id Continuous Drain Current450 mA450 mA800 mA
Rds On Drain Source Resistance1.5 Ohms1.8 Ohms1.8 Ohms
Vgs th Gate Source Threshold Voltage800 mV--
Vgs Gate Source Voltage10 V20 V20 V
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation700 mW700 mW2 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
Height4.95 mm4.95 mm1.65 mm
Length4.95 mm4.95 mm6.7 mm
ProductMOSFET Small SignalMOSFET Small Signal-
SeriesZVN4210ZVN4210ZVN4210
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypeFETFETFET
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Forward Transconductance Min250 mS--
Fall Time30 ns8 ns30 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time8 ns8 ns8 ns
Factory Pack Quantity400020001000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time20 ns20 ns20 ns
Typical Turn On Delay Time4 ns4 ns4 ns
Unit Weight0.016000 oz0.016000 oz0.003951 oz
Packaging-ReelReel
Width--3.7 mm
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
ZVN4210A MOSFET N-Chnl 100V
ZVN4210ASTZ MOSFET N-Chnl 100V
ZVN4210GTA MOSFET N-Chnl 100V
ZVN4210GTC MOSFET N-Chnl 100V
ZVN4210 Neu und Original
ZVN4210ASTOA Trans MOSFET N-CH 100V 0.45A 3-Pin TO-92 T/R
ZVN4210G Neu und Original
ZVN4210ASTZ-CUT TAPE Neu und Original
ZVN4210ASTOB MOSFET N-Chnl 100V
ZVN4210GTA Darlington Transistors MOSFET N-Chnl 100V
ZVN4210A Darlington Transistors MOSFET N-Chnl 100V
ZVN4210ASTZ MOSFET N-CH 100V 450MA TO92-3
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