ZVP211

ZVP2110A vs ZVP2110ASTZ vs ZVP2110ASTOB

 
PartNumberZVP2110AZVP2110ASTZZVP2110ASTOB
DescriptionMOSFET P-Chnl 100VMOSFET P-Chnl 100VMOSFET P-Chnl 100V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-92-3TO-92-3TO-92-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelP-ChannelP-Channel
Vds Drain Source Breakdown Voltage100 V100 V100 V
Id Continuous Drain Current230 mA230 mA230 mA
Rds On Drain Source Resistance8 Ohms8 Ohms8 Ohms
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage10 V20 V20 V
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation700 mW700 mW700 mW
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelBulk
Height4.01 mm4.01 mm-
Length4.77 mm4.77 mm-
ProductMOSFET Small SignalMOSFET Small SignalMOSFET Small Signal
SeriesZVP2110ZVP2110-
Transistor Type1 P-Channel1 P-Channel1 P-Channel
TypeFETFETFET
Width2.41 mm2.41 mm-
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Forward Transconductance Min125 mS--
Fall Time15 ns15 ns15 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time15 ns15 ns15 ns
Factory Pack Quantity400020004000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time12 ns12 ns12 ns
Typical Turn On Delay Time7 ns7 ns7 ns
Unit Weight0.016000 oz0.016000 oz0.016000 oz
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
ZVP2110GTA MOSFET P-Chnl 100V
ZVP2110A MOSFET P-Chnl 100V
ZVP2110ASTZ MOSFET P-Chnl 100V
ZVP2110ASTOB MOSFET P-Chnl 100V
ZVP211 Neu und Original
ZVP2110 Neu und Original
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ZVP2110AST Neu und Original
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ZVP2110GTA-CUT TAPE Neu und Original
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