PartNumber | ZX5T851ASTZ | ZX5T851A | ZX5T849GTA |
Description | Bipolar Transistors - BJT NPN 60V 4.5A 3-PIN | Bipolar Transistors - BJT NPN 60V | Bipolar Transistors - BJT NPN 30V |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Mounting Style | Through Hole | Through Hole | SMD/SMT |
Package / Case | E-Line-3 | E-Line-3 | SOT-223-4 |
Transistor Polarity | NPN | NPN | NPN |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 60 V | 60 V | 30 V |
Collector Base Voltage VCBO | 150 V | 150 V | 80 V |
Emitter Base Voltage VEBO | 7 V | 7 V | 7 V |
Maximum DC Collector Current | 4.5 A | 4.5 A | 20 A |
Gain Bandwidth Product fT | 130 MHz | 130 MHz | 140 MHz |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | ZX5T851 | ZX5T851 | - |
DC Current Gain hFE Max | 100 at 10 mA, 1 V | - | 300 |
Height | 4.01 mm | 4.01 mm | 1.65 mm |
Length | 4.77 mm | 4.77 mm | 6.7 mm |
Packaging | Reel | Bulk | Reel |
Width | 2.41 mm | 2.41 mm | 3.7 mm |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Pd Power Dissipation | 1000 mW | 1000 mW | 3 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 2000 | 4000 | 1000 |
Subcategory | Transistors | Transistors | Transistors |
Continuous Collector Current | - | 4.5 A | 7 A |
DC Collector/Base Gain hfe Min | - | - | 20 |
Unit Weight | - | - | 0.003951 oz |