ZXMN6A08E6T

ZXMN6A08E6TA vs ZXMN6A08E6TA(6A8) vs ZXMN6A08E6TA-CUT TAPE

 
PartNumberZXMN6A08E6TAZXMN6A08E6TA(6A8)ZXMN6A08E6TA-CUT TAPE
DescriptionMOSFET 60V N-Chnl UMOS
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-26-6--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current3.5 A--
Rds On Drain Source Resistance80 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge5.8 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.1 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.3 mm--
Length3.1 mm--
ProductMOSFET Small Signal--
SeriesZXMN6A0--
Transistor Type1 N-Channel--
TypeMOSFET--
Width1.8 mm--
BrandDiodes Incorporated--
Forward Transconductance Min6.6 S--
Fall Time4.6 ns--
Product TypeMOSFET--
Rise Time2.1 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time12.3 ns--
Typical Turn On Delay Time2.6 ns--
Unit Weight0.000282 oz--
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
ZXMN6A08E6TA MOSFET 60V N-Chnl UMOS
ZXMN6A08E6TC MOSFET 60V N-Chnl UMOS
ZXMN6A08E6TA MOSFET N-CH 60V 2.8A SOT23-6
ZXMN6A08E6TA(6A8) Neu und Original
ZXMN6A08E6TA-CUT TAPE Neu und Original
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