ZXT12N20DXT stock, ZXT12N20DXT, ZXT12N20DXTA


PartNumber	ZXT12N20DXTA	ZXT12N20DXTC	ZXT12N20DXTR
Description	Bipolar Transistors - BJT Dual 20V NPN	Bipolar Transistors - BJT Dual 20V NPN
Manufacturer	Diodes Incorporated	Diodes Incorporated	ZETEX
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Transistors (BJT) - Arrays
RoHS	Y	Y	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	MSOP-8	MSOP-8	-
Transistor Polarity	NPN	NPN	-
Configuration	Dual	Dual	-
Collector Emitter Voltage VCEO Max	20 V	20 V	-
Collector Base Voltage VCBO	50 V	50 V	-
Emitter Base Voltage VEBO	7.5 V	7.5 V	-
Collector Emitter Saturation Voltage	160 mV	160 mV	-
Maximum DC Collector Current	3.5 A	3.5 A	-
Gain Bandwidth Product fT	112 MHz	112 MHz	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	ZXT12	-	-
DC Current Gain hFE Max	250 at 10 mA, 2 V	250 at 10 mA, 2 V	-
Height	0.95 mm	0.95 mm	-
Length	3.1 mm	3.1 mm	-
Packaging	Reel	Reel	-
Width	3.1 mm	3.1 mm	-
Brand	Diodes Incorporated	Diodes Incorporated	-
Continuous Collector Current	3.5 A	3.5 A	-
DC Collector/Base Gain hfe Min	250 at 10 mA, 2 V, 300 at 1 A, 2 V, 200 at 3.5 A, 2 V, 40 at 10 A, 2 V	-	-
Pd Power Dissipation	870 mW	870 mW	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	1000	4000	-
Subcategory	Transistors	Transistors	-
Unit Weight	0.004938 oz	0.004938 oz	-

Search Part Number : "ZXT12N20DXT", Match & Start with "ZXT12N20DXT" - Total : 5

Hersteller	Teil #	Beschreibung
Diodes Incorporated	ZXT12N20DXTA	Bipolar Transistors - BJT Dual 20V NPN
Diodes Incorporated	ZXT12N20DXTC	Bipolar Transistors - BJT Dual 20V NPN
	ZXT12N20DXTR	Neu und Original
	ZXT12N20DXTC	TRANS 2NPN 20V 3.5A 8MSOP
	ZXT12N20DXTA	Bipolar Transistors - BJT Dual 20V NPN

ZXT12N20DXT