IPB015N04NGATMA1

IPB015N04NGATMA1
Mfr. #:
IPB015N04NGATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB015N04NGATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
120 A
Rds On - Drain-Source-Widerstand:
1.2 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
250 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
250 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
120 S
Abfallzeit:
13 ns
Produktart:
MOSFET
Anstiegszeit:
10 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
64 ns
Typische Einschaltverzögerungszeit:
40 ns
Teil # Aliase:
G IPB015N04N IPB15N4NGXT SP000391522
Gewichtseinheit:
0.139332 oz
Tags
IPB015N04N, IPB015N04, IPB015, IPB01, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R
***ineon SCT
OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TO263-3, RoHS
***nell
MOSFET, N CH, 120A, 40V, PG-TO263-3; Transistor Polarity:N; Current Id Max:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.2mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:250W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO263; No. of Pins:3; Transistor Type:Power MOSFET
***ineon
OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches
Teil # Mfg. Beschreibung Aktie Preis
IPB015N04NGATMA1
DISTI # V72:2272_06377349
Infineon Technologies AGTrans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
145
  • 100:$2.8470
  • 25:$2.9520
  • 10:$3.2800
  • 1:$4.2438
IPB015N04NGATMA1
DISTI # V36:1790_06377349
Infineon Technologies AGTrans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
0
  • 1000000:$1.7130
  • 500000:$1.7150
  • 100000:$1.8650
  • 10000:$2.1100
  • 1000:$2.1500
IPB015N04NGATMA1
DISTI # IPB015N04NGATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 40V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3182In Stock
  • 500:$2.6400
  • 100:$3.1012
  • 10:$3.7850
  • 1:$4.2100
IPB015N04NGATMA1
DISTI # IPB015N04NGATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 40V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3182In Stock
  • 500:$2.6400
  • 100:$3.1012
  • 10:$3.7850
  • 1:$4.2100
IPB015N04NGATMA1
DISTI # IPB015N04NGATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 40V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
3000In Stock
  • 5000:$1.9764
  • 2000:$2.0536
  • 1000:$2.1616
IPB015N04NGATMA1
DISTI # 26194846
Infineon Technologies AGTrans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
145
  • 4:$4.2438
IPB015N04NGATMA1
DISTI # IPB015N04NGATMA1
Infineon Technologies AGTrans MOSFET N-CH 40V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB015N04NGATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$1.7900
  • 4000:$1.8900
  • 6000:$1.8900
  • 2000:$1.9900
  • 1000:$2.0900
IPB015N04N G
DISTI # 726-IPB015N04NG
Infineon Technologies AGMOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3
RoHS: Compliant
1000
  • 1:$3.8900
  • 10:$3.3000
  • 100:$2.8600
  • 250:$2.7200
  • 500:$2.4400
  • 1000:$2.0500
  • 2000:$1.9500
IPB015N04NGATMA1
DISTI # 726-IPB015N04NGATMA1
Infineon Technologies AGMOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3
RoHS: Compliant
1024
  • 1:$3.8900
  • 10:$3.3000
  • 100:$2.8600
  • 250:$2.7200
  • 500:$2.4400
  • 1000:$2.0500
  • 2000:$1.9500
IPB015N04NGATMA1
DISTI # IPB015N04NGATMA1
Infineon Technologies AGTransistor: N-MOSFET,unipolar,40V,120A,250W,PG-TO263-3565
  • 100:$2.1397
  • 25:$2.2974
  • 5:$2.5564
  • 1:$2.8942
IPB015N04NGATMA1
DISTI # 1775518
Infineon Technologies AGMOSFET, N CH, 120A, 40V, PG-TO263-30
  • 500:£1.8800
  • 250:£2.1000
  • 100:£2.2000
  • 10:£2.5500
  • 1:£3.3600
Bild Teil # Beschreibung
FMMT597TA

Mfr.#: FMMT597TA

OMO.#: OMO-FMMT597TA

Bipolar Transistors - BJT PNP High Voltage
IPB015N04N G

Mfr.#: IPB015N04N G

OMO.#: OMO-IPB015N04N-G

MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3
FDS6680A

Mfr.#: FDS6680A

OMO.#: OMO-FDS6680A

MOSFET SO-8 SGL N-CH 30V
SQ2398ES-T1_GE3

Mfr.#: SQ2398ES-T1_GE3

OMO.#: OMO-SQ2398ES-T1-GE3

MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified
MBRM140T3G

Mfr.#: MBRM140T3G

OMO.#: OMO-MBRM140T3G

Schottky Diodes & Rectifiers 1A 40V
MAX4649EKA+T

Mfr.#: MAX4649EKA+T

OMO.#: OMO-MAX4649EKA-T-CBC

Analog Switch ICs 45Ohm SPDT Analog Switch
MCP1725T-3302E/MC

Mfr.#: MCP1725T-3302E/MC

OMO.#: OMO-MCP1725T-3302E-MC

LDO Voltage Regulators 500mA CMOS LDO Vout=3.3V
C1206C223K2RACTU

Mfr.#: C1206C223K2RACTU

OMO.#: OMO-C1206C223K2RACTU

Multilayer Ceramic Capacitors MLCC - SMD/SMT 200V .022uF X7R 1206 10%
0603ZC124KAT2A

Mfr.#: 0603ZC124KAT2A

OMO.#: OMO-0603ZC124KAT2A

Multilayer Ceramic Capacitors MLCC - SMD/SMT 10V .12uF X7R 0603 10%
MCP1725T-3302E/MC

Mfr.#: MCP1725T-3302E/MC

OMO.#: OMO-MCP1725T-3302E-MC-MICROCHIP-TECHNOLOGY

LDO Voltage Regulators 500mA CMOS LDO Vout=3.3V
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von IPB015N04NGATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,89 $
3,89 $
10
3,30 $
33,00 $
100
2,86 $
286,00 $
250
2,72 $
680,00 $
500
2,44 $
1 220,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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