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SKM200GB12E4

SKM200GB12E4
Mfr. #:
SKM200GB12E4
Hersteller:
SEMIKRON
Beschreibung:
IGBT, D-56, IGBT, 1200 V, 310 A, 1200 V, 20 V, 5.5 V (Typ.)
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SKM200GB12E4 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
SEMIKRON
Produktkategorie
IC-Chips
Tags
SKM200GB12E, SKM200GB12, SKM200GB1, SKM200GB, SKM200G, SKM200, SKM20, SKM2, SKM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
IGBT, D-56, IGBT, 1200 V, 310 A, 1200 V, 20 V, 5.5 V (Typ.)
***nell
IGBT MODULE, DUAL N CH, 1.2KV, 313A; Transistor Polarity: Dual N Channel; DC Collector Current: 313A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: -; Collector Emitter Voltage V(br)ceo: 1.2kV; Tra
***ikron
Features: IGBT4 = 4. Generation (Trench)IGBT V CEsat with positive temperature coefficient High short circuit capability, self limiting to 6 x I CNOM Soft switching 4. Generation CAL diode (CAL4) UL recognized, file no. E63532 Typical Applications: AC inverter drives UPS Electronic welders at f sw up to 20 kHz
***ical
Trans IGBT Module N-CH 1200V 275A 1400000mW 7-Pin 62MM Tray
***ark
Igbt, Module, N-Ch, 1.2Kv, 275A; Transistor Polarity:n Channel; Dc Collector Current:275A; Collector Emitter Saturation Voltage Vce(On):3.2V; Power Dissipation Pd:1.4Kw; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***ineon
Our well-known 62 mm 1200V dual IGBT modules with the fast IGBT2 for high-frequency switching are the right choice for your design. | Summary of Features: High Short Circuit Capability; Self Limiting Short Circuit Current; Low Switching Losses; Unbeatable Robustness; V(CEsat) with positive Temperature Coefficient; Package with CTI > 400; High Creepage and Clearance Distances; Isolated Base Plate; Copper Base Plate; Standard Housing | Benefits: PrimeSTACKs available for fast development with minimum effort; Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
***et Europe
Trans IGBT Module N-CH 1.2kV 200A nom 1550W 4-Pin 106.4x61.4mm
*** Electronic Components
IGBT Modules 1200V 200A SINGLE
***trelec
IGBT module Connection: 2 x M6, 3 x M4 Fastening: 4 x M6 Configuration: Single Housing type: 62 mm Collector-emitter saturation voltage: 3.1 V
***et Europe
Trans IGBT Module N-CH 1.2kV 150A nom 1250W 7-Pin 106.4x61.4mm
***ronik
IGBT-Mod. 150A 1200V 2,5kV 62mm
***trelec
IGBT module Connection: 3 x M6 Fastening: 4 x M6 Configuration: Half-Bridge Housing type: 62 mm Collector-emitter saturation voltage: 2.6 V Energy dissipation during make-time: 17 mJ Energy dissipation during turn-off time: 18 mJ
Teil # Mfg. Beschreibung Aktie Preis
SKM200GB12E4HD
DISTI # 86W0684		SEMIKRONIGBT, MODULE, 1.2KV, 314A,Transistor Polarity:Dual NPN,DC Collector Current:314A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:7Pins RoHS Compliant: Yes0
    SKM200GB12E4
    DISTI # 70098168    		SEMIKRONIGBT,D-56,IGBT,1200 V,310 A,1200 V,20 V,5.5 V (Typ.)
    RoHS: Compliant    		0
    • 1:$173.1800
    • 12:$163.9400
    • 48:$155.6100
    • 96:$148.1000
    • 144:$141.2700
    SKM200GB12E4
    DISTI # 6874973    		SEMIKRONIGBT MODULE HALF-BRIDGE 314A 1200V, EA54
    • 20:£105.4900
    • 10:£114.6600
    • 5:£115.6400
    • 2:£118.0900
    • 1:£120.5400
    SKM200GB12E4
    DISTI # 2423693    		SEMIKRONIGBT MODULE, DUAL N CH, 1.2KV, 313A
    RoHS: Compliant    		0
    • 1:$274.6800
    SKM200GB12E4
    DISTI # 2423693    		SEMIKRONIGBT MODULE, DUAL N CH, 1.2KV, 313A
    RoHS: Compliant    		0
    • 10:£118.0000
    • 5:£132.0000
    • 1:£159.0000
    Bild Teil # Beschreibung
    SKM200MLI066TAT

    Mfr.#: SKM200MLI066TAT

    OMO.#: OMO-SKM200MLI066TAT-1190

    		 SEMITRANS, IGBT Module, 600V, 200A
    SKM200GAH123DKLSP

    Mfr.#: SKM200GAH123DKLSP

    OMO.#: OMO-SKM200GAH123DKLSP-1190

    		 Neu und Original
    SKM200GAL125

    Mfr.#: SKM200GAL125

    OMO.#: OMO-SKM200GAL125-1190

    		 Neu und Original
    SKM200GAL12E4

    Mfr.#: SKM200GAL12E4

    OMO.#: OMO-SKM200GAL12E4-1190

    		 SEMITRANS, 1200V, 200A
    SKM200GAR063D

    Mfr.#: SKM200GAR063D

    OMO.#: OMO-SKM200GAR063D-1190

    		 Neu und Original
    SKM200GB123D

    Mfr.#: SKM200GB123D

    OMO.#: OMO-SKM200GB123D-1190

    		 Neu und Original
    SKM200GB126D

    Mfr.#: SKM200GB126D

    OMO.#: OMO-SKM200GB126D-1190

    		 SEMITRANS, 1200V, 200A
    SKM200GB128DE

    Mfr.#: SKM200GB128DE

    OMO.#: OMO-SKM200GB128DE-1190

    		 Neu und Original
    SKM200GB12V

    Mfr.#: SKM200GB12V

    OMO.#: OMO-SKM200GB12V-1190

    		 IGBT Array & Module Transistor, Dual N Channel, 311 A, 1.75 V, 1.2 kV, Module RoHS Compliant: Yes
    SKM200GB174D

    Mfr.#: SKM200GB174D

    OMO.#: OMO-SKM200GB174D-1190

    		 Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2500
    Menge eingeben:
    Der aktuelle Preis von SKM200GB12E4 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
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    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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