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SKM200GB12V

SKM200GB12V
Mfr. #:
SKM200GB12V
Hersteller:
SEMIKRON
Beschreibung:
IGBT Array & Module Transistor, Dual N Channel, 311 A, 1.75 V, 1.2 kV, Module RoHS Compliant: Yes
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SKM200GB12V Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
SEMIKRON
Produktkategorie
Modul
Tags
SKM200GB12, SKM200GB1, SKM200GB, SKM200G, SKM200, SKM20, SKM2, SKM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ment14 APAC
IGBT MODULE, DUAL N CH, 1.2KV, 311A; Transistor Polarity:Dual Channel; DC Collector Current:311A; Emitter Saturation Voltage
***ark
Igbt Module; Continuous Collector Current:311A; Collector Emitter Saturation Voltage:1.75V; Power Dissipation:-; Operating Temperature Max:175°C; Igbt Termination:stud; Collector Emitter Voltage Max:1.2Kv; Transistor Mounting:panel Rohs Compliant: Yes
***ikron
Features: V-IGBT = 6. Generation Trench V-IGBT (Fuji) CAL4 = Soft switching 4. Generation CAL-diode Isolated copper baseplate using DBC technology (Direct Copper Bonding) UL recognized, file no. E63532 Increased power cycling capability With integrated gate resistor Low switching losses at high di/dt Typical Applications: AC inverter drives UPS Electronic welders
***ical
Trans IGBT Module N-CH 1200V 105A 350000mW 24-Pin EconoPIM3 Tray
***ineon SCT
EconoPIM™ 3 1200V three phase PIM IGBT module with IGBT3 and NTC, AG-ECONO3-3, RoHS
***ment14 APAC
IGBT MODULE, 1200V, ECONOPIM; Transistor Polarity:N Channel; DC Collector Current:105A; Emitter Saturation Voltage Vce(on):2.3V; Power
***ark
IGBT MODULE, 1200V, ECONOPIM; Continuous Collector Current:105A; Collector Emitter Saturation Voltage:2.3V; Power Dissipation:350W; Operating Temperature Max:125°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
***ineon
EconoPIM 3 1200V three phase PIM IGBT module with IGBT3 and NTC | Summary of Features: Low stray inductance module design; High reliability and power density; Copper base plate for optimized heat spread; Solderable pins; Low switching losses; High switching frequency; RoHS-compliant modules | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility; Fast, reliable and low cost mounting concept | Target Applications: drives; medical; induction; aircon
***ure Electronics
FF150R12RT4 Series 1200 V 150 A 790 W Surface Mount IGBT Module
***ark
Igbt, Module, N-Ch, 1.2Kv, 150A; Transistor Polarity:n Channel; Dc Collector Current:150A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:790W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***trelec
Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.75 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Configuration = Dual / Channel Type = N-Channel / Power Dissipation (Pd) W = 790 / Continuous Collector Current (Ic) A = 150 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Emitter Leakage Current nA = 100 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tray
***ineon
Our well-known 34 mm 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled 4 Diode are the right choice for your design. | Summary of Features: Extended Operation Temperature T vj op; Low Switching Losses; Low V CEsat; T vj op = 150C; V CEsat with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
***ark
IGBT Array & Module Transistor, Dual NPN, 580 A, 1.75 V, 2.4 kW, 1.2 kV, Module
*** Source Electronics
Trans IGBT Module N-CH 1200V 580A 2400000mW 7-Pin 62MM-1 Tray / IGBT MODULE 1200V 450A
***ure Electronics
FF450R12KT4 Series 1200 V 580 A Trench Field-Stop IGBT Module
***nell
IGBT MODULE, DUAL NPN, 1.75V, 580A; Transistor Polarity: Dual NPN; DC Collector Current: 580A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 2.4kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Trans
***ineon
Our well-known 62mm C-series 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled diode are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
*** Stop Electro
Power Bipolar Transistor, 100A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon
***ure Electronics
NPN 125 V 100 A Surface Mount Transistor Power Module - ISOTOP
*** Electronic Components
Bipolar Transistors - BJT NPN Power Module
***ow.cn
Trans GP BJT NPN 125V 100A 250000mW 4-Pin ISOTOP Tube
***nell
TRANSISTOR, NPN, ISOTOP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 200V; Transition Frequency ft: -; Power Dissipation Pd: 250W; DC Collector Current: 100A; DC Current Gain hFE: 27hFE; Transistor Case Style
***ark
BIPOLAR TRANSISTOR, NPN, 200V; Transistor Polarity:NPN; Collector Emitter Voltage Max:200V; Continuous Collector Current:100A; Power Dissipation:250W; Transistor Mounting:Module; No. of Pins:4Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
SKM200GB12V
DISTI # 55X3193		SEMIKRONIGBT Array & Module Transistor, Dual N Channel, 311 A, 1.75 V, 1.2 kV, Module RoHS Compliant: Yes7
  • 25:$213.0500
  • 10:$216.9200
  • 5:$220.7900
  • 1:$224.6600
SKM200GB12V
DISTI # 71043275		SEMIKRONSEMITRANS,1200V,200A
RoHS: Compliant		0
  • 1:$213.9600
  • 12:$202.9000
  • 48:$189.8100
  • 96:$178.3100
  • 144:$168.1100
SKM200GB12V
DISTI # SKM200GB12V		SEMIKRONIGBT half-bridge,Urmax:1.2kV,Ic:237A,SEMITRANS3,V: D56,screw1
  • 3:$202.9000
  • 1:$229.9600
SKM200GB12V
DISTI # 2423695		SEMIKRONIGBT MODULE, DUAL N CH, 1.2KV, 311A
RoHS: Compliant		1
  • 10:£130.0000
  • 5:£131.0000
  • 1:£132.0000
SKM200GB12V
DISTI # 2423695		SEMIKRONIGBT MODULE, DUAL N CH, 1.2KV, 311A
RoHS: Compliant		2
  • 100:$270.9000
  • 25:$280.2400
  • 10:$290.2500
  • 1:$301.0000
Bild Teil # Beschreibung
SKM200MLI066TAT

Mfr.#: SKM200MLI066TAT

OMO.#: OMO-SKM200MLI066TAT-1190

 SEMITRANS, IGBT Module, 600V, 200A
SKM2000GB128D

Mfr.#: SKM2000GB128D

OMO.#: OMO-SKM2000GB128D-1190

 Neu und Original
SKM200GAH123DKLSP

Mfr.#: SKM200GAH123DKLSP

OMO.#: OMO-SKM200GAH123DKLSP-1190

 Neu und Original
SKM200GAL126DKL

Mfr.#: SKM200GAL126DKL

OMO.#: OMO-SKM200GAL126DKL-1190

 Neu und Original
SKM200GAL174D

Mfr.#: SKM200GAL174D

OMO.#: OMO-SKM200GAL174D-1190

 Neu und Original
SKM200GB123D

Mfr.#: SKM200GB123D

OMO.#: OMO-SKM200GB123D-1190

 Neu und Original
SKM200GB123DH6

Mfr.#: SKM200GB123DH6

OMO.#: OMO-SKM200GB123DH6-1190

 Neu und Original
SKM200GB12E4

Mfr.#: SKM200GB12E4

OMO.#: OMO-SKM200GB12E4-1190

 IGBT, D-56, IGBT, 1200 V, 310 A, 1200 V, 20 V, 5.5 V (Typ.)
SKM200GB12V

Mfr.#: SKM200GB12V

OMO.#: OMO-SKM200GB12V-1190

 IGBT Array & Module Transistor, Dual N Channel, 311 A, 1.75 V, 1.2 kV, Module RoHS Compliant: Yes
SKM2064

Mfr.#: SKM2064

OMO.#: OMO-SKM2064-1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von SKM200GB12V dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
252,16 $
252,16 $
10
239,56 $
2 395,57 $
100
226,95 $
22 694,85 $
500
214,34 $
107 170,15 $
1000
201,73 $
201 732,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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