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FQB34N20LTM

FQB34N20LTM
Mfr. #:
FQB34N20LTM
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET N-CH 200V 31A D2PAK
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQB34N20LTM Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
FAIRCHILD
Produktkategorie
FETs - Einzeln
Tags
FQB34N20LT, FQB34N20L, FQB34N, FQB34, FQB3, FQB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 31 A, 80 mΩ, D2PAK
***ure Electronics
FQB34N20L Series 200 V 31 A 75 mOhm SMT N-Channel QFET Mosfet - D2PAK-3
***ical
Trans MOSFET N-CH 200V 31A 3-Pin (2+Tab) D2PAK T/R
***ment14 APAC
MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:200V; On Resistance Rds(on):75mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:180W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Id Max:31A; Package / Case:D2-PAK; Power Dissipation Pd:180W; Power Dissipation on 1 Sq. PCB:3.13W; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Teil # Mfg. Beschreibung Aktie Preis
FQB34N20LTM
DISTI # V72:2272_06301129		ON SemiconductorTrans MOSFET N-CH 200V 31A 3-Pin(2+Tab) D2PAK T/R72
  • 25:$1.7701
  • 10:$1.7888
  • 1:$2.1014
FQB34N20LTM
DISTI # FQB34N20LTMCT-ND		ON SemiconductorMOSFET N-CH 200V 31A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		885In Stock
  • 100:$1.9349
  • 10:$2.4080
  • 1:$2.6700
FQB34N20LTM
DISTI # FQB34N20LTMDKR-ND		ON SemiconductorMOSFET N-CH 200V 31A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		885In Stock
  • 100:$1.9349
  • 10:$2.4080
  • 1:$2.6700
FQB34N20LTM
DISTI # FQB34N20LTMTR-ND		ON SemiconductorMOSFET N-CH 200V 31A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		800In Stock
  • 800:$1.3191
FQB34N20LTM
DISTI # 30185573		ON SemiconductorTrans MOSFET N-CH 200V 31A 3-Pin(2+Tab) D2PAK T/R17600
  • 800:$1.3239
FQB34N20LTM
DISTI # 30544473		ON SemiconductorTrans MOSFET N-CH 200V 31A 3-Pin(2+Tab) D2PAK T/R72
  • 25:$1.8040
  • 10:$1.8058
  • 7:$2.1015
FQB34N20LTM
DISTI # FQB34N20LTM		ON SemiconductorTrans MOSFET N-CH 200V 31A 3-Pin(2+Tab) D2PAK T/R (Alt: FQB34N20LTM)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Europe - 11200
  • 800:€1.1699
  • 1600:€0.9749
  • 3200:€0.8999
  • 4800:€0.8359
  • 8000:€0.7799
FQB34N20LTM
DISTI # FQB34N20LTM		ON SemiconductorTrans MOSFET N-CH 200V 31A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB34N20LTM)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 800:$0.8619
  • 1600:$0.8569
  • 3200:$0.8459
  • 4800:$0.8349
  • 8000:$0.8139
FQB34N20LTM
DISTI # 61M6402		ON SemiconductorMOSFET Transistor, N Channel, 31 A, 200 V, 75 mohm, 10 V, 2 V RoHS Compliant: Yes800
  • 1:$2.3700
  • 10:$2.0200
  • 25:$1.8900
  • 50:$1.7600
  • 100:$1.6300
  • 250:$1.5400
  • 500:$1.4400
FQB34N20LTM
DISTI # 34C0404		ON SemiconductorN CHANNEL MOSFET, 200V, 31A, D2-PAK, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.075ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
  • 1:$1.1900
  • 800:$1.1600
  • 1600:$1.1400
  • 3200:$1.1100
  • 4800:$1.0600
FQB34N20LTM
DISTI # 512-FQB34N20LTM		ON SemiconductorMOSFET 200V Single
RoHS: Compliant		4999
  • 1:$2.2400
  • 10:$1.9000
  • 100:$1.5200
  • 500:$1.3300
  • 800:$1.1100
FQB34N20LTMFairchild Semiconductor CorporationPower Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		4782
  • 1000:$1.0100
  • 500:$1.0700
  • 100:$1.1100
  • 25:$1.1600
  • 1:$1.2500
FQB34N20LTM
DISTI # 6710898P		ON SemiconductorMOSFET N-CHANNEL 200V 31A D2PAK, RL1060
  • 50:£1.0360
  • 100:£0.9480
  • 250:£0.8920
  • 500:£0.8680
FQB34N20LTM
DISTI # 6710898		ON SemiconductorMOSFET N-CHANNEL 200V 31A D2PAK, PK95
  • 5:£1.2640
  • 50:£1.0360
  • 100:£0.9480
  • 250:£0.8920
  • 500:£0.8680
FQB34N20LTM
DISTI # FQB34N20LTM		ON SemiconductorTransistor: N-MOSFET,unipolar,200V,20A,180W,D2PAK709
  • 1:$1.5700
  • 5:$1.3500
  • 25:$1.0800
  • 100:$0.9800
FQB34N20LTM
DISTI # 1495278		ON SemiconductorMOSFET, N, SMD, TO-263
RoHS: Compliant		800
  • 1:£1.9300
  • 10:£1.4600
  • 100:£1.1600
  • 250:£1.0000
  • 500:£0.8480
FQB34N20LTM
DISTI # 1495278		ON SemiconductorMOSFET, N, SMD, TO-263
RoHS: Compliant		800
  • 1:$3.5500
  • 10:$3.0100
  • 100:$2.4100
  • 500:$2.1000
  • 800:$1.7600
  • 2400:$1.6300
  • 4800:$1.5700
  • 9600:$1.5100
FQB34N20LTM
DISTI # C1S541901483977		ON SemiconductorUnclassified
RoHS: Compliant		72
  • 25:$1.8040
  • 10:$1.8058
Bild Teil # Beschreibung
FQB34P10TM

Mfr.#: FQB34P10TM

OMO.#: OMO-FQB34P10TM

 MOSFET 100V P-Channel QFET
FQB34P10TM-F085

Mfr.#: FQB34P10TM-F085

OMO.#: OMO-FQB34P10TM-F085

 MOSFET -33.5A,-100V, P-ch
FQB34P10TM-F085P

Mfr.#: FQB34P10TM-F085P

OMO.#: OMO-FQB34P10TM-F085P

 MOSFET -33.5A,-100V, P-ch MOSFET
FQB34N20TM

Mfr.#: FQB34N20TM

OMO.#: OMO-FQB34N20TM-1190

 Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
FQB34N20TM-AM002

Mfr.#: FQB34N20TM-AM002

OMO.#: OMO-FQB34N20TM-AM002-ON-SEMICONDUCTOR

 MOSFET N-CH 200V 31A D2PAK
FQB34P10TM-F085P

Mfr.#: FQB34P10TM-F085P

OMO.#: OMO-FQB34P10TM-F085P-ON-SEMICONDUCTOR

 PMOS D2PAK 100V 60 MOHM
FQB34P10TM/BKN

Mfr.#: FQB34P10TM/BKN

OMO.#: OMO-FQB34P10TM-BKN-1190

 Neu und Original
FQB34P10TM_F085

Mfr.#: FQB34P10TM_F085

OMO.#: OMO-FQB34P10TM-F085-1190

 -33.5A,-100V, P-CH MOSFET
FQB34N20TM_AM002

Mfr.#: FQB34N20TM_AM002

OMO.#: OMO-FQB34N20TM-AM002-124

 Darlington Transistors MOSFET 200V N-Channel QFET
FQB34N20LTM-CUT TAPE

Mfr.#: FQB34N20LTM-CUT TAPE

OMO.#: OMO-FQB34N20LTM-CUT-TAPE-1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2000
Menge eingeben:
Der aktuelle Preis von FQB34N20LTM dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,22 $
1,22 $
10
1,16 $
11,60 $
100
1,10 $
109,88 $
500
1,04 $
518,85 $
1000
0,98 $
976,70 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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