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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| IRFR4105TRR DISTI # IRFR4105TRR-ND | Infineon Technologies AG | MOSFET N-CH 55V 27A DPAK RoHS: Not compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| AUIRFR4105TRR DISTI # 942-AUIRFR4105TRR | Infineon Technologies AG | MOSFET AUTO 55V 1 N-CH HEXFET 45mOhms RoHS: Compliant | 0 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: IRFR4104TRLPBF OMO.#: OMO-IRFR4104TRLPBF |
MOSFET 40V 1 N-CH HEXFET 5.5mOhms 59nC |
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Mfr.#: IRFR48ZTRPBF OMO.#: OMO-IRFR48ZTRPBF |
MOSFET MOSFT 55V 62A 11mOhm 40nC Qg |
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Mfr.#: IRFR420 OMO.#: OMO-IRFR420 |
MOSFET RECOMMENDED ALT 844-IRFR420PBF |
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Mfr.#: IRFR4104TRR |
MOSFET N-CH 40V 42A DPAK |
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Mfr.#: IRFR4105TR |
MOSFET N-CH 55V 27A DPAK |
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Mfr.#: IRFR4105TRRPBF OMO.#: OMO-IRFR4105TRRPBF-1190 |
Neu und Original |
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Mfr.#: IRFR430BTF OMO.#: OMO-IRFR430BTF-1190 |
Power Field-Effect Transistor, 3.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
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Mfr.#: IRFR48Z OMO.#: OMO-IRFR48Z-1190 |
Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
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Mfr.#: IRFR48ZTRLPBF |
RF Bipolar Transistors MOSFET 55V 1 N-CH HEXFET 11mOhms 40nC |
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Mfr.#: IRFR430ATRRPBF OMO.#: OMO-IRFR430ATRRPBF-VISHAY |
RF Bipolar Transistors MOSFET N-Chan 500V 5.0 Amp |
