PartNumber | IRFR4105TR | IRFR4105TRL | IRFR4105PBF |
Description | MOSFET N-CH 55V 27A DPAK | MOSFET N-CH 55V 27A DPAK | IGBT Transistors MOSFET 55V 1 N-CH HEXFET 45mOhms 22.7nC |
Manufacturer | IR | IR | INFINEON TECHNOLOGIES |
Product Category | IC Chips | FETs - Single | FETs - Single |
Packaging | - | - | Tube |
Unit Weight | - | - | 0.139332 oz |
Mounting Style | - | - | SMD/SMT |
Package Case | - | - | TO-252-3 |
Technology | - | - | Si |
Number of Channels | - | - | 1 Channel |
Configuration | - | - | Single |
Transistor Type | - | - | 1 N-Channel |
Pd Power Dissipation | - | - | 48 W |
Maximum Operating Temperature | - | - | + 175 C |
Minimum Operating Temperature | - | - | - 55 C |
Fall Time | - | - | 40 ns |
Rise Time | - | - | 49 ns |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 25 A |
Vds Drain Source Breakdown Voltage | - | - | 55 V |
Rds On Drain Source Resistance | - | - | 45 mOhms |
Transistor Polarity | - | - | N-Channel |
Typical Turn Off Delay Time | - | - | 31 ns |
Typical Turn On Delay Time | - | - | 7 ns |
Qg Gate Charge | - | - | 22.7 nC |
Channel Mode | - | - | Enhancement |