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IKW50N65F5FKSA1

IKW50N65F5FKSA1
Mfr. #:
IKW50N65F5FKSA1
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors IGBT PRODUCTS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IKW50N65F5FKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IKW50N65F5FKSA1 Datasheet
ECAD Model:
Mehr Informationen:
IKW50N65F5FKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
1.6 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
80 A
Pd - Verlustleistung:
305 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
TRENCHSTOP 5 F5
Verpackung:
Rohr
Marke:
Infineon-Technologien
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
240
Unterkategorie:
IGBTs
Handelsname:
TRENCHSTOP
Teil # Aliase:
IKW50N65F5 SP000973420
Gewichtseinheit:
1.340411 oz
Tags
IKW50N65F, IKW50N65, IKW50N6, IKW50N, IKW5, IKW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 80A 305000mW Automotive 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
IKW50N65F5 Series 650 V 80 A 305 W Through Hole DuoPack IGBT - PG-TO-247-3
*** Source Electronics
650V DuoPack IGBT and Diode High speed switching series fifth generation
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 F5 Discrete IGBTs
Infineon TRENCHSTOP™ 5 F5 Discrete IGBTs are optimized for switching >60kHz to deliver optimum efficiency, bridging the gap between MOSFETs and IGBTs. The F5 series features significantly lower switching losses compared to currently leading solutions. Targeting topologies are boost stages, PFC (AC-DC) stages and high voltage DC-DC topologies commonly found in applications like Uninterruptible Power Supplies, UPS, Inverterized Welding Machines and Switch Mode Power Supplies (SMPS). The 650V TRENCHSTOP™ 5 F5 IGBTs are targeted for low inductance designs in combination with SiC diodes to offer 1% higher efficiency compared to 650V TRENCHSTOP™ 5 H5 family. The F5 products require higher design in effort, but rewards are higher.
Teil # Mfg. Beschreibung Aktie Preis
IKW50N65F5FKSA1
DISTI # 33145366		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		270
  • 150:$2.3364
  • 5:$2.6433
IKW50N65F5FKSA1
DISTI # IKW50N65F5FKSA1-ND		Infineon Technologies AGIGBT 650V 80A 305W PG-TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 2640:$2.5351
  • 720:$3.1562
  • 240:$3.7076
  • 25:$4.2780
  • 10:$4.5250
  • 1:$5.0400
IKW50N65F5FKSA1
DISTI # V99:2348_06378386		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
  • 500:$2.8080
  • 250:$3.1380
  • 100:$3.3240
  • 10:$3.8200
  • 1:$4.4640
IKW50N65F5FKSA1
DISTI # V36:1790_06378386		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    IKW50N65F5FKSA1
    DISTI # IKW50N65F5FKSA1    		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW50N65F5FKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Americas - 0
    • 1440:$2.2900
    • 2400:$2.2900
    • 960:$2.3900
    • 480:$2.4900
    • 240:$2.5900
    IKW50N65F5FKSA1
    DISTI # IKW50N65F5    		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: IKW50N65F5)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Asia - 0
      IKW50N65F5FKSA1
      DISTI # SP000973420      		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: SP000973420)
      RoHS: Compliant
      Min Qty: 1
      Container: Tube      		Europe - 0
      • 50:€1.9900
      • 100:€1.9900
      • 500:€1.9900
      • 1000:€1.9900
      • 25:€2.0900
      • 1:€2.1900
      • 10:€2.1900
      IKW50N65F5FKSA1
      DISTI # 33X0415      		Infineon Technologies AGIGBT, 650V, 80A, 175DEG C, 305W, TO-247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:305W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,MSL:- RoHS Compliant: Yes130
      • 100:$4.5700
      • 50:$4.7800
      • 25:$5.0000
      • 10:$5.2100
      • 1:$6.0600
      IKW50N65F5FKSA1
      DISTI # 726-IKW50N65F5FKSA1      		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
      RoHS: Compliant      		127
      • 1:$4.7900
      • 10:$4.0700
      • 100:$3.5300
      • 250:$3.3500
      • 500:$3.0000
      IKW50N65F5
      DISTI # 726-IKW50N65F5-ES      		Infineon Technologies AGIGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
      RoHS: Compliant      		0
      • 240:$3.5300
      • 480:$3.3500
      • 720:$3.0000
      IKW50N65F5FKSA1
      DISTI # 1109112P      		Infineon Technologies AGIGBT TRENCHSTOP N-CHANNEL 650V 50A TO247, TU2
      • 200:£2.3680
      • 80:£2.5950
      • 40:£2.7150
      • 8:£2.9880
      IKW50N65F5FKSA1
      DISTI # 2363295      		Infineon Technologies AGIGBT, 650V, 50A, TO247-3182
      • 500:£2.3700
      • 250:£2.6500
      • 100:£2.7900
      • 10:£3.2100
      • 1:£4.2100
      IKW50N65F5FKSA1
      DISTI # IKW50N65F5      		Infineon Technologies AG650V 80A 305W TO247
      RoHS: Compliant      		150
      • 1:€5.9000
      • 10:€2.9000
      • 50:€1.9000
      • 100:€1.8300
      Bild Teil # Beschreibung
      KDZVTFTR33B

      Mfr.#: KDZVTFTR33B

      OMO.#: OMO-KDZVTFTR33B

      		 Zener Diodes 33-37V 10mA SOD-123FL; PMDU
      AIGW50N65F5XKSA1

      Mfr.#: AIGW50N65F5XKSA1

      OMO.#: OMO-AIGW50N65F5XKSA1

      		 IGBT Transistors DISCRETES
      VS-CPU6006LHN3

      Mfr.#: VS-CPU6006LHN3

      OMO.#: OMO-VS-CPU6006LHN3

      		 Rectifiers 600V 2x30A FRED Pt TO-247 LL 3L
      VS-CPU6006L-N3

      Mfr.#: VS-CPU6006L-N3

      OMO.#: OMO-VS-CPU6006L-N3

      		 Rectifiers 600V 2x30A FRED Pt TO-247 LL 3L
      DMP3099L-7

      Mfr.#: DMP3099L-7

      OMO.#: OMO-DMP3099L-7

      		 MOSFET P-Ch ENH FET -30V 65mOhm -20V -3.8A
      RB160MM-60TFTR

      Mfr.#: RB160MM-60TFTR

      OMO.#: OMO-RB160MM-60TFTR

      		 Schottky Diodes & Rectifiers 60V VR 1A 0.55V VF PMDU; SOD-123FL
      DMP3099L-7

      Mfr.#: DMP3099L-7

      OMO.#: OMO-DMP3099L-7-DIODES

      		 Neu und Original
      EEF-GX0E471R

      Mfr.#: EEF-GX0E471R

      OMO.#: OMO-EEF-GX0E471R-PANASONIC

      		 Aluminum Organic Polymer Capacitors 2.5V 470uF 4A(rms) ESR 3mohm 2 Terminal
      KDZVTFTR33B

      Mfr.#: KDZVTFTR33B

      OMO.#: OMO-KDZVTFTR33B-37

      		 ZENER DIODES (CORRESPONDS TO AEC
      ESD-SR-100

      Mfr.#: ESD-SR-100

      OMO.#: OMO-ESD-SR-100-KEMET

      		 EMI/RFI Suppressors & Ferrites Ferrite Clamp On Cores Ferrite EMI 16.5mm Split/Snap-On
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1985
      Menge eingeben:
      Der aktuelle Preis von IKW50N65F5FKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      4,79 $
      4,79 $
      10
      4,07 $
      40,70 $
      100
      3,53 $
      353,00 $
      250
      3,35 $
      837,50 $
      500
      3,00 $
      1 500,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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