OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

SISA04DN-T1-GE3

SISA04DN-T1-GE3
Mfr. #:
SISA04DN-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SISA04DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SISA04DN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-1212-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
40 A
Rds On - Drain-Source-Widerstand:
1.8 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.1 V
Vgs - Gate-Source-Spannung:
20 V, - 16 V
Qg - Gate-Ladung:
77 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
52 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SIS
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
105 S
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
17 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
25 ns
Typische Einschaltverzögerungszeit:
24 ns
Teil # Aliase:
SISA04DN-GE3
Tags
SISA0, SISA, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, 30V, 40A, PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Cu
***ied Electronics & Automation
Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 40A; 2.15mohm @ 10V; PowerPAK 1212-8
***nell
MOSFET, 30V, 40A, PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
SiSA04DN N-Channel MOSFET
Vishay Siliconix's SiSA04DN N-Channel 30V (D-S) MOSFET is a TrenchFET® Gen IV Power MOSFET that is 100% Rg and UIS tested. In addition, the SiSA04DN N-Channel MOSFET from Vishay Siliconix is halogen-free according to IEC 61249-2-21 definition and compliant to RoHS Directive 2002/95/EC. Learn More
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SISA04DN-T1-GE3
DISTI # V72:2272_09216115		Vishay IntertechnologiesTrans MOSFET N-CH 30V 30.9A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		3000
  • 3000:$0.5387
  • 1000:$0.5430
  • 500:$0.5951
  • 250:$0.6992
  • 100:$0.7010
  • 25:$0.8613
  • 10:$0.8649
  • 1:$0.9983
SISA04DN-T1-GE3
DISTI # SISA04DN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 40A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6276In Stock
  • 1000:$0.6118
  • 500:$0.7750
  • 100:$0.9993
  • 10:$1.2640
  • 1:$1.4300
SISA04DN-T1-GE3
DISTI # SISA04DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 40A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6276In Stock
  • 1000:$0.6118
  • 500:$0.7750
  • 100:$0.9993
  • 10:$1.2640
  • 1:$1.4300
SISA04DN-T1-GE3
DISTI # SISA04DN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 40A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 3000:$0.5544
SISA04DN-T1-GE3
DISTI # 31011007		Vishay IntertechnologiesTrans MOSFET N-CH 30V 30.9A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		3000
  • 3000:$0.5387
  • 1000:$0.5430
  • 500:$0.5951
  • 250:$0.6992
  • 100:$0.7010
  • 25:$0.8613
  • 14:$0.8649
SISA04DN-T1-GE3
DISTI # SISA04DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 30.9A 8-Pin PowerPAK 1212 T/R (Alt: SISA04DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SISA04DN-T1-GE3
    DISTI # SISA04DN-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 30.9A 8-Pin PowerPAK 1212 T/R (Alt: SISA04DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 3000:€0.8649
    • 6000:€0.6209
    • 12000:€0.5029
    • 18000:€0.4449
    • 30000:€0.4259
    SISA04DN-T1-GE3
    DISTI # SISA04DN-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 30.9A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SISA04DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$0.5239
    • 6000:$0.5079
    • 12000:$0.4869
    • 18000:$0.4739
    • 30000:$0.4609
    SISA04DN-T1-GE3
    DISTI # 05W5778    		Vishay IntertechnologiesMOSFET, 30V, 40A, PPAK1212-8,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0018ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:52W,No. of Pins:8 , RoHS Compliant: Yes2060
    • 1:$1.2600
    • 10:$1.0400
    • 25:$0.9590
    • 50:$0.8770
    • 100:$0.7960
    • 500:$0.6850
    • 1000:$0.6000
    SISA04DN-T1-GE3
    DISTI # 70243889    		Vishay SiliconixSemiconcuctor,Mosfet,TrenchFET,N-Channel,30V,40A,2.15mohm @ 10V,PowerPAK 1212-8
    RoHS: Compliant    		0
    • 3000:$0.4960
    SISA04DN-T1-GE3
    DISTI # 78-SISA04DN-T1-GE3    		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8
    RoHS: Compliant    		2556
    • 1:$1.2600
    • 10:$1.0400
    • 100:$0.7960
    • 500:$0.6850
    • 1000:$0.5400
    • 3000:$0.5040
    SISA04DN-T1-GE3
    DISTI # 7689307P    		Vishay IntertechnologiesMOSFET N-CH 30V 30.9A POWERPAK 1212-8, RL1618
    • 20:£0.3500
    SISA04DN-T1-GE3
    DISTI # C1S803601730905    		Vishay IntertechnologiesMOSFETs
    RoHS: Compliant    		3000
    • 250:$0.6992
    • 100:$0.7012
    • 25:$0.8613
    • 10:$0.8649
    SISA04DN-T1-GE3
    DISTI # 2114704    		Vishay IntertechnologiesMOSFET, 30V, 40A, PPAK1212-8
    RoHS: Compliant    		2128
    • 1:$2.0000
    • 10:$1.6500
    • 100:$1.2600
    • 500:$1.0900
    • 1000:$0.9500
    • 3000:$0.9500
    SISA04DN-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8Americas - 18000
    • 3000:$0.5040
    • 6000:$0.4760
    • 12000:$0.4620
    • 24000:$0.4550
    SISA04DN-T1-GE3
    DISTI # 2114704    		Vishay IntertechnologiesMOSFET, 30V, 40A, PPAK1212-8
    RoHS: Compliant    		2610
    • 5:£0.3570
    • 25:£0.3500
    • 100:£0.3430
    • 250:£0.3360
    • 500:£0.3280
    Bild Teil # Beschreibung
    BSS138LT1G

    Mfr.#: BSS138LT1G

    OMO.#: OMO-BSS138LT1G

    		 MOSFET 50V 200mA N-Channel
    PD3S140-7

    Mfr.#: PD3S140-7

    OMO.#: OMO-PD3S140-7

    		 Schottky Diodes & Rectifiers 1.0A 40V
    LT3062EDCB#TRMPBF

    Mfr.#: LT3062EDCB#TRMPBF

    OMO.#: OMO-LT3062EDCB-TRMPBF

    		 LDO Voltage Regulators 45V Vin, Micropower, Low Noise, 200mA LDO with Output Discharge
    SISA96DN-T1-GE3

    Mfr.#: SISA96DN-T1-GE3

    OMO.#: OMO-SISA96DN-T1-GE3

    		 MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
    ERJ-2RKF4701X

    Mfr.#: ERJ-2RKF4701X

    OMO.#: OMO-ERJ-2RKF4701X

    		 Thick Film Resistors - SMD 0402 4.7Kohms 1% AEC-Q200
    IHLP2525BDER1R0M01

    Mfr.#: IHLP2525BDER1R0M01

    OMO.#: OMO-IHLP2525BDER1R0M01

    		 Fixed Inductors 1uH 20%
    IHLP2525BDER1R0M01

    Mfr.#: IHLP2525BDER1R0M01

    OMO.#: OMO-IHLP2525BDER1R0M01-VISHAY-DALE

    		 Fixed Inductors 1uH 20%
    SML-LX0402SUGC-TR

    Mfr.#: SML-LX0402SUGC-TR

    OMO.#: OMO-SML-LX0402SUGC-TR-LUMEX

    		 Standard LEDs - SMD Green Water Clear 574nm 45mcd
    SISA96DN-T1-GE3

    Mfr.#: SISA96DN-T1-GE3

    OMO.#: OMO-SISA96DN-T1-GE3-VISHAY

    		 MOSFET N-CH 30V 16A POWERPAK1212
    BSS138LT1G

    Mfr.#: BSS138LT1G

    OMO.#: OMO-BSS138LT1G-ON-SEMICONDUCTOR

    		 MOSFET N-CH 50V 200MA SOT-23
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1988
    Menge eingeben:
    Der aktuelle Preis von SISA04DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,25 $
    1,25 $
    10
    1,03 $
    10,30 $
    100
    0,80 $
    79,50 $
    500
    0,68 $
    342,00 $
    1000
    0,54 $
    539,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
    Beginnen mit
    Neueste Produkte
    • -12 V and -20 V P-Channel Gen III MOSFETs
      -12 V and -20 V P-Channel Gen III MOSFETs
      Vishay's TrenchFET® MOSFETs features low on-resistance for -12 V and -20 V devices, allowing for lower voltage drops.
    • DG2788A Dual DPDT / Quad SPDT Analog Switch
      DG2788A Dual DPDT / Quad SPDT Analog Switch
      Vishay introduces the dual DPDT / quad SPDT analog switch featuring low resistance of 0.37 Ω at 2.7 V in the compact 2.6 mm x 1.8 mm x 0.55 mm miniQFN16 package.
    • Smart Load Switches
      Smart Load Switches
      Vishay's smart load switch features a simplified GPIO control can be used to implement power distribution and sequencing of multiple-sub-systems.
    • SUM70101EL 100 V P-Channel MOSFET
      SUM70101EL 100 V P-Channel MOSFET
      Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
    • Compare SISA04DN-T1-GE3
      Compare SISA04DN-T1-GE3
      SISA01DNT1GE3 vs SISA04DNT1GE3 vs SISA10DN
    • DGQ2788A AEC-Q100 Qualified Analog Switch
      DGQ2788A AEC-Q100 Qualified Analog Switch
      The wide operation voltage range, low resistance, and high bandwidth of Vishay Siliconix's DGQ2788A make it ideal for a variety of design needs, simplifying the BOM.
    More Newest Products
    Top