SI2336DS-T1-GE3

SI2336DS-T1-GE3
Mfr. #:
SI2336DS-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 30V 5.2A SOT-23
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI2336DS-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI2336DS-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SI233, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Si2336DS Series N-Channel 30 V 42 mOhm 1.25 W Surface Mount Mosfet - TO-236
***et
Trans MOSFET N-CH 30V 4.3A 3-Pin SOT-23 T/R
***ment14 APAC
MOSFET,N CH,30V,5.2A,DIODE,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:5.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.034ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.3A; Power Dissipation Pd:1.25W; Voltage Vgs Max:8V
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Teil # Mfg. Beschreibung Aktie Preis
SI2336DS-T1-GE3
DISTI # V72:2272_09216811
Vishay IntertechnologiesTrans MOSFET N-CH 30V 4.3A 3-Pin SOT-23 T/R
RoHS: Compliant
637
  • 1000:$0.1778
  • 500:$0.2269
  • 250:$0.2833
  • 100:$0.2869
  • 25:$0.3635
  • 10:$0.3741
  • 1:$0.4330
SI2336DS-T1-GE3
DISTI # V36:1790_09216811
Vishay IntertechnologiesTrans MOSFET N-CH 30V 4.3A 3-Pin SOT-23 T/R
RoHS: Compliant
0
  • 3000:$0.1834
SI2336DS-T1-GE3
DISTI # SI2336DS-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 30V 5.2A SOT-23
Min Qty: 1
Container: Cut Tape (CT)
95In Stock
  • 1000:$0.1926
  • 500:$0.2493
  • 100:$0.3172
  • 10:$0.4250
  • 1:$0.5000
SI2336DS-T1-GE3
DISTI # SI2336DS-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 5.2A SOT-23
Min Qty: 1
Container: Digi-Reel®
95In Stock
  • 1000:$0.1926
  • 500:$0.2493
  • 100:$0.3172
  • 10:$0.4250
  • 1:$0.5000
SI2336DS-T1-GE3
DISTI # SI2336DS-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 30V 5.2A SOT-23
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 30000:$0.1463
  • 15000:$0.1485
  • 6000:$0.1595
  • 3000:$0.1705
SI2336DS-T1-GE3
DISTI # 32724033
Vishay IntertechnologiesTrans MOSFET N-CH 30V 4.3A 3-Pin SOT-23 T/R
RoHS: Compliant
637
  • 1000:$0.1778
  • 500:$0.2269
  • 250:$0.2833
  • 100:$0.2869
  • 41:$0.3635
SI2336DS-T1-GE3
DISTI # SI2336DS-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 4.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2336DS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.1410
  • 18000:$0.1449
  • 12000:$0.1490
  • 6000:$0.1554
  • 3000:$0.1601
SI2336DS-T1-GE3
DISTI # 23T8500
Vishay IntertechnologiesMOSFET,N CH,30V,5.2A,DIODE,SOT23,Transistor Polarity:N Channel,Continuous Drain Current Id:5.2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.034ohm,Rds(on) Test Voltage Vgs:4.5V,Power Dissipation Pd:1.25W,Operating RoHS Compliant: Yes
RoHS: Compliant
32763
  • 1000:$0.2170
  • 500:$0.2700
  • 250:$0.2960
  • 100:$0.3210
  • 50:$0.3550
  • 25:$0.3890
  • 10:$0.4220
  • 1:$0.5420
SI2336DS-T1-GE3
DISTI # 65T1688
Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 5.2A, SOT-23-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:5.2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.034ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:3Pins RoHS Compliant: Yes
RoHS: Compliant
0
  • 50000:$0.1420
  • 30000:$0.1490
  • 20000:$0.1600
  • 10000:$0.1710
  • 5000:$0.1850
  • 1:$0.1900
SI2336DS-T1-GE3
DISTI # 70459510
Vishay SiliconixMOSFET N-CH 30V 5.2A SOT-23
RoHS: Not Compliant
0
  • 3000:$0.5010
  • 6000:$0.3760
SI2336DS-T1-GE3
DISTI # 781-SI2336DS-T1-GE3
Vishay IntertechnologiesMOSFET 30V Vds 8V Vgs SOT-23
RoHS: Compliant
25879
  • 1:$0.5200
  • 10:$0.4250
  • 100:$0.3170
  • 500:$0.2420
  • 1000:$0.1870
  • 3000:$0.1700
SI2336DS-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 8V Vgs SOT-23
RoHS: Compliant
Americas - 42000
  • 3000:$0.1580
  • 6000:$0.1500
  • 12000:$0.1450
  • 18000:$0.1410
SI2336DS-T1-GE3
DISTI # SI2336DS-T1-GE3
Vishay IntertechnologiesTransistor: N-MOSFET,unipolar,30V,4.1A,1.1W,SOT2336
  • 3000:$0.1547
  • 500:$0.1668
  • 100:$0.1845
  • 25:$0.2088
  • 3:$0.2320
SI2336DS-T1-GE3
DISTI # TMOSS6484
Vishay IntertechnologiesN-CH 30V 5,2A 42mOhm SOT23
RoHS: Compliant
Stock DE - 0Stock HK - 0Stock US - 0
  • 3000:$0.2050
  • 6000:$0.1925
  • 9000:$0.1809
  • 12000:$0.1634
  • 15000:$0.1576
SI2336DS-T1-GE3
DISTI # 1858945RL
Vishay IntertechnologiesMOSFET,N CH,30V,5.2A,DIODE,SOT23
RoHS: Compliant
0
  • 5000:£0.1440
  • 1000:£0.1730
  • 500:£0.2010
  • 250:£0.2240
  • 100:£0.2460
  • 10:£0.3700
  • 1:£0.4960
SI2336DS-T1-GE3
DISTI # 1858945
Vishay IntertechnologiesMOSFET,N CH,30V,5.2A,DIODE,SOT23
RoHS: Compliant
33775
  • 5000:£0.1440
  • 1000:£0.1730
  • 500:£0.2010
  • 250:£0.2240
  • 100:£0.2460
  • 10:£0.3700
  • 1:£0.4960
SI2336DS-T1-GE3
DISTI # 1858945RL
Vishay IntertechnologiesMOSFET,N CH,30V,5.2A,DIODE,SOT23
RoHS: Compliant
0
  • 1000:$0.3030
  • 500:$0.3920
  • 100:$0.4990
  • 10:$0.6670
  • 1:$0.7800
SI2336DS-T1-GE3
DISTI # 1858945
Vishay IntertechnologiesMOSFET,N CH,30V,5.2A,DIODE,SOT23
RoHS: Compliant
32843
  • 1000:$0.3030
  • 500:$0.3920
  • 100:$0.4990
  • 10:$0.6670
  • 1:$0.7800
SI2336DS-T1-GE3Vishay IntertechnologiesMOSFET10
  • 1:¥11.1100
  • 100:¥5.1884
  • 1000:¥3.2946
  • 1500:¥2.3458
  • 3000:¥1.7171
Bild Teil # Beschreibung
SI2336DS-T1-GE3

Mfr.#: SI2336DS-T1-GE3

OMO.#: OMO-SI2336DS-T1-GE3

MOSFET 30V Vds 8V Vgs SOT-23
SI2336DS

Mfr.#: SI2336DS

OMO.#: OMO-SI2336DS-1190

Neu und Original
SI2336DS-T1-GE3

Mfr.#: SI2336DS-T1-GE3

OMO.#: OMO-SI2336DS-T1-GE3-VISHAY

MOSFET N-CH 30V 5.2A SOT-23
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von SI2336DS-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,24 $
0,24 $
10
0,23 $
2,25 $
100
0,21 $
21,36 $
500
0,20 $
100,85 $
1000
0,19 $
189,80 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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