SI2336DS-T1-GE3

Mfr. #:: SI2336DS-T1-GE3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET 30V Vds 8V Vgs SOT-23
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI2336DS-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI2336DS-T1-GE3 Datasheet SI2336DS-T1-GE3 Datasheet (P4-P6)SI2336DS-T1-GE3 Datasheet (P7-P9)SI2336DS-T1-GE3 Datasheet (P10)
ECAD Model:
Mehr Informationen:: SI2336DS-T1-GE3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: SOT-23-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 30 V

Id - Kontinuierlicher Drainstrom:: 5.2 A

Rds On - Drain-Source-Widerstand:: 42 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 400 mV

Vgs - Gate-Source-Spannung:: 4.5 V

Qg - Gate-Ladung:: 10 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 1.8 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: TrenchFET

Verpackung:: Spule

Höhe:: 1.45 mm

Länge:: 2.9 mm

Serie:: SI2

Transistortyp:: 1 N-Channel

Breite:: 1.6 mm

Marke:: Vishay / Siliconix

Vorwärtstranskonduktanz - Min:: 30 S

Abfallzeit:: 10 ns

Produktart:: MOSFET

Anstiegszeit:: 10 ns

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 20 ns

Typische Einschaltverzögerungszeit:: 6 ns

Teil # Aliase:: SI2336DS-GE3

Gewichtseinheit:: 0.000282 oz

Tags: SI233, SI23, SI2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2336DS-T1-GE3 Beschreibung

***ure Electronics: Si2336DS Series N-Channel 30 V 42 mOhm 1.25 W Surface Mount Mosfet - TO-236

***et: Trans MOSFET N-CH 30V 4.3A 3-Pin SOT-23 T/R

***ment14 APAC: MOSFET,N CH,30V,5.2A,DIODE,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:5.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.034ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.3A; Power Dissipation Pd:1.25W; Voltage Vgs Max:8V

SI2336DS-T1-GE3 Mehr Informationen

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI2336DS-T1-GE3 DISTI # V72:2272_09216811	Vishay Intertechnologies	Trans MOSFET N-CH 30V 4.3A 3-Pin SOT-23 T/R RoHS: Compliant	637	1000:$0.1778 500:$0.2269 250:$0.2833 100:$0.2869 25:$0.3635 10:$0.3741 1:$0.4330
SI2336DS-T1-GE3 DISTI # V36:1790_09216811	Vishay Intertechnologies	Trans MOSFET N-CH 30V 4.3A 3-Pin SOT-23 T/R RoHS: Compliant	0	3000:$0.1834
SI2336DS-T1-GE3 DISTI # SI2336DS-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 5.2A SOT-23 Min Qty: 1 Container: Cut Tape (CT)	95In Stock	1000:$0.1926 500:$0.2493 100:$0.3172 10:$0.4250 1:$0.5000
SI2336DS-T1-GE3 DISTI # SI2336DS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 5.2A SOT-23 Min Qty: 1 Container: Digi-Reel®	95In Stock	1000:$0.1926 500:$0.2493 100:$0.3172 10:$0.4250 1:$0.5000
SI2336DS-T1-GE3 DISTI # SI2336DS-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 5.2A SOT-23 Min Qty: 3000 Container: Tape & Reel (TR)	On Order	30000:$0.1463 15000:$0.1485 6000:$0.1595 3000:$0.1705
SI2336DS-T1-GE3 DISTI # 32724033	Vishay Intertechnologies	Trans MOSFET N-CH 30V 4.3A 3-Pin SOT-23 T/R RoHS: Compliant	637	1000:$0.1778 500:$0.2269 250:$0.2833 100:$0.2869 41:$0.3635
SI2336DS-T1-GE3 DISTI # SI2336DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 4.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2336DS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.1410 18000:$0.1449 12000:$0.1490 6000:$0.1554 3000:$0.1601
SI2336DS-T1-GE3 DISTI # 23T8500	Vishay Intertechnologies	MOSFET,N CH,30V,5.2A,DIODE,SOT23,Transistor Polarity:N Channel,Continuous Drain Current Id:5.2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.034ohm,Rds(on) Test Voltage Vgs:4.5V,Power Dissipation Pd:1.25W,Operating RoHS Compliant: Yes RoHS: Compliant	32763	1000:$0.2170 500:$0.2700 250:$0.2960 100:$0.3210 50:$0.3550 25:$0.3890 10:$0.4220 1:$0.5420
SI2336DS-T1-GE3 DISTI # 65T1688	Vishay Intertechnologies	MOSFET, N CHANNEL, 30V, 5.2A, SOT-23-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:5.2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.034ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:3Pins RoHS Compliant: Yes RoHS: Compliant	0	50000:$0.1420 30000:$0.1490 20000:$0.1600 10000:$0.1710 5000:$0.1850 1:$0.1900
SI2336DS-T1-GE3 DISTI # 70459510	Vishay Siliconix	MOSFET N-CH 30V 5.2A SOT-23 RoHS: Not Compliant	0	3000:$0.5010 6000:$0.3760
SI2336DS-T1-GE3 DISTI # 781-SI2336DS-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 8V Vgs SOT-23 RoHS: Compliant	25879	1:$0.5200 10:$0.4250 100:$0.3170 500:$0.2420 1000:$0.1870 3000:$0.1700
SI2336DS-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 8V Vgs SOT-23 RoHS: Compliant	Americas - 42000	3000:$0.1580 6000:$0.1500 12000:$0.1450 18000:$0.1410
SI2336DS-T1-GE3 DISTI # SI2336DS-T1-GE3	Vishay Intertechnologies	Transistor: N-MOSFET,unipolar,30V,4.1A,1.1W,SOT23	36	3000:$0.1547 500:$0.1668 100:$0.1845 25:$0.2088 3:$0.2320
SI2336DS-T1-GE3 DISTI # TMOSS6484	Vishay Intertechnologies	N-CH 30V 5,2A 42mOhm SOT23 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	3000:$0.2050 6000:$0.1925 9000:$0.1809 12000:$0.1634 15000:$0.1576
SI2336DS-T1-GE3 DISTI # 1858945RL	Vishay Intertechnologies	MOSFET,N CH,30V,5.2A,DIODE,SOT23 RoHS: Compliant	0	5000:£0.1440 1000:£0.1730 500:£0.2010 250:£0.2240 100:£0.2460 10:£0.3700 1:£0.4960
SI2336DS-T1-GE3 DISTI # 1858945	Vishay Intertechnologies	MOSFET,N CH,30V,5.2A,DIODE,SOT23 RoHS: Compliant	33775	5000:£0.1440 1000:£0.1730 500:£0.2010 250:£0.2240 100:£0.2460 10:£0.3700 1:£0.4960
SI2336DS-T1-GE3 DISTI # 1858945RL	Vishay Intertechnologies	MOSFET,N CH,30V,5.2A,DIODE,SOT23 RoHS: Compliant	0	1000:$0.3030 500:$0.3920 100:$0.4990 10:$0.6670 1:$0.7800
SI2336DS-T1-GE3 DISTI # 1858945	Vishay Intertechnologies	MOSFET,N CH,30V,5.2A,DIODE,SOT23 RoHS: Compliant	32843	1000:$0.3030 500:$0.3920 100:$0.4990 10:$0.6670 1:$0.7800
SI2336DS-T1-GE3	Vishay Intertechnologies	MOSFET	10	1:¥11.1100 100:¥5.1884 1000:¥3.2946 1500:¥2.3458 3000:¥1.7171

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Verfügbarkeit

Aktie:: 26
Auf Bestellung:: 2009
Menge eingeben:

Der aktuelle Preis von SI2336DS-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,52 $~~; ~~0,52 $~~

10: ~~0,40 $~~; ~~3,97 $~~

100: ~~0,29 $~~; ~~29,40 $~~

500: ~~0,24 $~~; ~~121,00 $~~

1000: ~~0,19 $~~; ~~187,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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SI2336DS-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes