SI2331DS-T1-E3 vs SI2331DS-T1-GE3 vs SI2333

 
PartNumberSI2331DS-T1-E3SI2331DS-T1-GE3SI2333
DescriptionMOSFET P-CH 12V 3.2A SOT23-3MOSFET P-CH 12V 3.2A SOT23-3
Manufacturer-VISHAY-
Product Category-FETs - Single-
Series-TrenchFET-
Packaging-Tape & Reel (TR)-
Part Status-Obsolete-
FET Type-P-Channel-
Technology-MOSFET (Metal Oxide)-
Drain to Source Voltage (Vdss)-12V-
Current Continuous Drain (Id) @ 25°C-3.2A (Ta)-
Drive Voltage (Max Rds On, Min Rds On)-1.8V, 4.5V-
Vgs(th) (Max) @ Id-900mV @ 250A-
Gate Charge (Qg) (Max) @ Vgs-14nC @ 4.5V-
Vgs (Max)-±8V-
Input Capacitance (Ciss) (Max) @ Vds-780pF @ 6V-
FET Feature---
Power Dissipation (Max)-710mW (Ta)-
Rds On (Max) @ Id, Vgs-48 mOhm @ 3.6A, 4.5V-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-23-3 (TO-236)-
Package / Case-TO-236-3, SC-59, SOT-23-3-
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