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SI4431CDY-T1-E3

SI4431CDY-T1-E3
Mfr. #:
SI4431CDY-T1-E3
Hersteller:
Vishay
Beschreibung:
MOSFET P-CH 30V 9A 8SOIC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4431CDY-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI4431CDY-T1-E3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
FETs - Einzeln
Verpackung
Spule
Teil-Aliasnamen
SI4431CDY-E3
Gewichtseinheit
0.006596 oz
Montageart
SMD/SMT
Paket-Koffer
SOIC-Narrow-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 P-Channel
Pd-Verlustleistung
2.5 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
9 ns 11 ns
Anstiegszeit
13 ns 89 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
7 A
Vds-Drain-Source-Breakdown-Voltage
- 30 V
Rds-On-Drain-Source-Widerstand
32 mOhms
Transistor-Polarität
P-Kanal
Typische-Ausschaltverzögerungszeit
23 ns 22 ns
Typische-Einschaltverzögerungszeit
10 ns 38 ns
Kanal-Modus
Erweiterung
Tags
SI4431CDY-T1, SI4431CDY-T, SI4431C, SI4431, SI443, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single P-Channel 30 V 2.5 W 38 nC Silicon Surface Mount Mosfet - SOIC-8
***ical
Trans MOSFET P-CH 30V 9A 8-Pin SOIC N T/R
***i-Key
MOSFET P-CH 30V 9A 8SOIC
***ark
Transistor Polarity:p Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.026Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power Dissipation Pd:4.2W; No. Of Pins:8Pins Rohs Compliant: No
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI4431CDY-T1-E3
DISTI # V72:2272_09216489		Vishay IntertechnologiesTrans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R
RoHS: Compliant		2426
  • 1000:$0.3957
  • 500:$0.4347
  • 250:$0.4737
  • 100:$0.4739
  • 25:$0.6091
  • 10:$0.6098
  • 1:$0.7477
SI4431CDY-T1-E3
DISTI # V36:1790_09216489		Vishay IntertechnologiesTrans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R
RoHS: Compliant		0
    SI4431CDY-T1-E3
    DISTI # SI4431CDY-T1-E3CT-ND    		Vishay SiliconixMOSFET P-CH 30V 9A 8SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		2041In Stock
    • 1000:$0.5588
    • 500:$0.6993
    • 100:$0.8924
    • 10:$1.1210
    • 1:$1.2600
    SI4431CDY-T1-E3
    DISTI # SI4431CDY-T1-E3DKR-ND    		Vishay SiliconixMOSFET P-CH 30V 9A 8SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		2041In Stock
    • 1000:$0.5588
    • 500:$0.6993
    • 100:$0.8924
    • 10:$1.1210
    • 1:$1.2600
    SI4431CDY-T1-E3
    DISTI # SI4431CDY-T1-E3TR-ND    		Vishay SiliconixMOSFET P-CH 30V 9A 8SOIC
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 12500:$0.4675
    • 5000:$0.4845
    • 2500:$0.5084
    SI4431CDY-T1-E3
    DISTI # 31749187    		Vishay IntertechnologiesTrans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R
    RoHS: Compliant    		2426
    • 1000:$0.4254
    • 500:$0.4673
    • 250:$0.5092
    • 100:$0.5094
    • 25:$0.6548
    • 15:$0.6555
    SI4431CDY-T1-E3
    DISTI # SI4431CDY-T1-E3    		Vishay IntertechnologiesTrans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R (Alt: SI4431CDY-T1-E3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Asia - 0
      SI4431CDY-T1-E3
      DISTI # SI4431CDY-T1-E3      		Vishay IntertechnologiesTrans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4431CDY-T1-E3)
      RoHS: Not Compliant
      Min Qty: 2500
      Container: Reel      		Americas - 0
      • 2500:$0.2911
      • 5000:$0.2825
      • 10000:$0.2710
      • 15000:$0.2635
      • 25000:$0.2564
      SI4431CDY-T1-E3
      DISTI # 33P5257      		Vishay IntertechnologiesP-CHANNEL 30-V (D-S) MOSFET0
      • 50000:$0.3160
      • 30000:$0.3300
      • 20000:$0.3550
      • 10000:$0.3790
      • 5000:$0.4110
      • 1:$0.4210
      SI4431CDY-T1-E3.
      DISTI # 23AC9598      		Vishay IntertechnologiesTransistor Polarity:P Channel,Continuous Drain Current Id:7A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.026ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,Power Dissipation Pd:4.2W,No. of Pins:8Pins RoHS Compliant: No0
      • 50000:$0.3160
      • 30000:$0.3300
      • 20000:$0.3550
      • 10000:$0.3790
      • 5000:$0.4110
      • 1:$0.4210
      SI4431CDY-T1-E3
      DISTI # 781-SI4431CDY-E3      		Vishay IntertechnologiesMOSFET -30V Vds 20V Vgs SO-8
      RoHS: Compliant      		3041
      • 1:$0.8000
      • 10:$0.6380
      • 100:$0.4850
      SI4431CDY-T1-E3Vishay Intertechnologies 999
      • 201:$0.8000
      • 51:$1.0000
      • 1:$2.0000
      SI4431CDYT1E3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
      RoHS: Compliant      		Europe - 1990
        Bild Teil # Beschreibung
        SI4431CDY-T1-GE3

        Mfr.#: SI4431CDY-T1-GE3

        OMO.#: OMO-SI4431CDY-T1-GE3

        		 MOSFET -30V Vds 20V Vgs SO-8
        SI4431CDY-T1-E3

        Mfr.#: SI4431CDY-T1-E3

        OMO.#: OMO-SI4431CDY-T1-E3

        		 MOSFET -30V Vds 20V Vgs SO-8
        SI4431CDY

        Mfr.#: SI4431CDY

        OMO.#: OMO-SI4431CDY-1190

        		 Neu und Original
        SI4431CDY-GE3-S

        Mfr.#: SI4431CDY-GE3-S

        OMO.#: OMO-SI4431CDY-GE3-S-1190

        		 Neu und Original
        SI4431CDY-T1-E3

        Mfr.#: SI4431CDY-T1-E3

        OMO.#: OMO-SI4431CDY-T1-E3-VISHAY

        		 MOSFET P-CH 30V 9A 8SOIC
        SI4431CDY-T1-GE3

        Mfr.#: SI4431CDY-T1-GE3

        OMO.#: OMO-SI4431CDY-T1-GE3-VISHAY

        		 MOSFET P-CH 30V 9A 8-SOIC
        SI4431CDY-T1-GE3-S

        Mfr.#: SI4431CDY-T1-GE3-S

        OMO.#: OMO-SI4431CDY-T1-GE3-S-1190

        		 Neu und Original
        SI4431CDY-TI-GE3

        Mfr.#: SI4431CDY-TI-GE3

        OMO.#: OMO-SI4431CDY-TI-GE3-1190

        		 Neu und Original
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        3500
        Menge eingeben:
        Der aktuelle Preis von SI4431CDY-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,38 $
        0,38 $
        10
        0,37 $
        3,65 $
        100
        0,35 $
        34,62 $
        500
        0,33 $
        163,45 $
        1000
        0,31 $
        307,70 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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