SI4431CDY-T1-GE3

Mfr. #:: SI4431CDY-T1-GE3
Hersteller:: Vishay
Beschreibung:: MOSFET P-CH 30V 9A 8-SOIC
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI4431CDY-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: SI4431CDY-T1-GE3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller: Vishay Siliconix

Produktkategorie: FETs - Einzeln

Serie: GrabenFETR

Verpackung: Digi-ReelR Alternative Verpackung

Teil-Aliasnamen: SI4431CDY-GE3

Gewichtseinheit: 0.006596 oz

Montageart: SMD/SMT

Paket-Koffer: 8-SOIC (0.154", 3.90mm Width)

Technologie: Si

Betriebstemperatur: -55°C ~ 150°C (TJ)

Befestigungsart: Oberflächenmontage

Anzahl der Kanäle: 1 Channel

Lieferanten-Geräte-Paket: 8-SO

Aufbau: Single

FET-Typ: MOSFET P-Kanal, Metalloxid

Leistung max: 4.2W

Transistor-Typ: 1 P-Channel

Drain-zu-Source-Spannung-Vdss: 30V

Eingangskapazität-Ciss-Vds: 1006pF @ 15V

FET-Funktion: Standard

Strom-Dauer-Drain-Id-25°C: 9A (Tc)

Rds-On-Max-Id-Vgs: 32 mOhm @ 7A, 10V

Vgs-th-Max-Id: 2.5V @ 250μA

Gate-Lade-Qg-Vgs: 38nC @ 10V

Pd-Verlustleistung: 2.5 W

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Abfallzeit: 9 ns 11 ns

Anstiegszeit: 13 ns 89 ns

Vgs-Gate-Source-Spannung: 20 V

ID-Dauer-Drain-Strom: 7 A

Vds-Drain-Source-Breakdown-Voltage: - 30 V

Rds-On-Drain-Source-Widerstand: 32 mOhms

Transistor-Polarität: P-Kanal

Typische-Ausschaltverzögerungszeit: 23 ns 22 ns

Typische-Einschaltverzögerungszeit: 10 ns 38 ns

Kanal-Modus: Erweiterung

Tags: SI4431CDY-T1, SI4431CDY-T, SI4431C, SI4431, SI443, SI44, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4431CDY-T1-GE3 Mehr Informationen

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI4431CDY-T1-GE3 DISTI # V72:2272_09216490	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R RoHS: Compliant	2804	1000:$0.3565 500:$0.3862 250:$0.4161 100:$0.4360 25:$0.5572 10:$0.5636 1:$0.6462
SI4431CDY-T1-GE3 DISTI # SI4431CDY-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 30V 9A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	57666In Stock	1000:$0.2900 500:$0.3626 100:$0.4895 10:$0.6340 1:$0.7300
SI4431CDY-T1-GE3 DISTI # SI4431CDY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 30V 9A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	57666In Stock	1000:$0.2900 500:$0.3626 100:$0.4895 10:$0.6340 1:$0.7300
SI4431CDY-T1-GE3 DISTI # SI4431CDY-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 30V 9A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	55000In Stock	2500:$0.2552
SI4431CDY-T1-GE3 DISTI # 28970573	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R RoHS: Compliant	2804	1000:$0.3565 500:$0.3862 250:$0.4161 100:$0.4360 25:$0.5572 17:$0.5636
SI4431CDY-T1-GE3 DISTI # 30618276	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R RoHS: Compliant	560	250:$0.5393 100:$0.5801 50:$0.7268 10:$0.7778 7:$3.7102
SI4431CDY-T1-GE3 DISTI # SI4431CDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R - Cut TR (SOS) (Alt: SI4431CDY-T1-GE3) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape	Americas - 274	1:$0.5739 25:$0.5379 62:$0.4919 125:$0.4159 312:$0.3929 625:$0.3489 1250:$0.3479
SI4431CDY-T1-GE3 DISTI # SI4431CDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R (Alt: SI4431CDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI4431CDY-T1-GE3 DISTI # SI4431CDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4431CDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.2879 5000:$0.2869 10000:$0.2859 15000:$0.2849 25000:$0.2839
SI4431CDY-T1-GE3 DISTI # SI4431CDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R (Alt: SI4431CDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.4119 5000:€0.2809 10000:€0.2419 15000:€0.2229 25000:€0.2079
SI4431CDY-T1-GE3 DISTI # 16P3738	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 16P3738) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.8000 10:$0.6380 25:$0.5870 50:$0.5360 100:$0.4850 250:$0.4430 500:$0.4000
SI4431CDY-T1-GE3 DISTI # 23T8505	Vishay Intertechnologies	MOSFET Transistor, P Channel, -9 A, -30 V, 0.026 ohm, -10 V, -2.5 V , RoHS Compliant: Yes	6445	1:$0.8000 10:$0.6380 25:$0.5870 50:$0.5360 100:$0.4850 250:$0.4430 500:$0.4000 1000:$0.3350
SI4431CDY-T1-GE3 DISTI # 16P3738	Vishay Intertechnologies	P CHANNEL MOSFET, -30V, 9A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:-9A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.026ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V , RoHS Compliant: Yes	0	1:$0.8000 10:$0.6380 25:$0.5870 50:$0.5360 100:$0.4850 250:$0.4430 500:$0.4000 1000:$0.3350
SI4431CDY-T1-GE3 DISTI # 29X0533	Vishay Intertechnologies	MOSFET, P CHANNEL, -30V, -9A, SOIC-8, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-9A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.026ohm,Rds(on) Test Voltage Vgs:-10V,Power Dissipation Pd:4.2W , RoHS Compliant: Yes	0	1:$0.3340 2500:$0.3340
SI4431CDY-T1-GE3. DISTI # 30AC0162	Vishay Intertechnologies	P-CHANNEL 30-V (D-S) MOSFET , ROHS COMPLIANT: NO	0	1:$0.3340 2500:$0.3340
SI4431CDY-T1-GE3 DISTI # 70459534	Vishay Siliconix	MOSFET P-CH 30V 9A 8-SOIC RoHS: Compliant	0	2500:$0.6100 5000:$0.5690
SI4431CDY-T1-GE3 DISTI # 781-SI4431CDY-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs SO-8 RoHS: Compliant	16404	1:$0.8000 10:$0.6380 100:$0.4850 500:$0.4000 1000:$0.3350 2500:$0.3340
SI4431CDY-T1-GE3	Vishay Siliconix	7000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	36	8:$0.5400 1:$0.7200
SI4431CDY-T1-GE3 DISTI # 8123215	Vishay Intertechnologies	TRANS MOSFET P-CH 30V 7A, PK	520	20:£0.4950 100:£0.3520 500:£0.2790 1500:£0.2430 2500:£0.2420
SI4431CDY-T1-GE3 DISTI # 8123215P	Vishay Intertechnologies	TRANS MOSFET P-CH 30V 7A, RL	1240	100:£0.3520 500:£0.2790 1500:£0.2430 2500:£0.2420
SI4431CDY-T1-GE3 DISTI # SI4431CDY-GE3	Vishay Intertechnologies	P-Ch 30V 9A 2,5W 0,032R SO8 RoHS: Compliant	1100	50:€0.2810 100:€0.2210 500:€0.1910 2500:€0.1850
SI4431CDY-T1-GE3 DISTI # 1858950	Vishay Intertechnologies	MOSFET,P CH,DIODE,30V,9A,8-SOIC RoHS: Compliant	8765	5:£0.5050 25:£0.5040 100:£0.3590 250:£0.3200 500:£0.2810
SI4431CDY-T1-GE3 DISTI # XSFP00000090669	Vishay Siliconix	RoHS: Compliant	3365	2500:$0.6900 3365:$0.6273
SI4431CDY-T1-GE3 DISTI # 1858950	Vishay Intertechnologies	MOSFET,P CH,DIODE,30V,9A,8-SOIC RoHS: Compliant	6678	1:$1.1600 10:$1.0100 100:$0.7750 500:$0.5740 1000:$0.4590
SI4431CDY-T1-GE3 DISTI # 1858950RL	Vishay Intertechnologies	MOSFET,P CH,DIODE,30V,9A,8-SOIC RoHS: Compliant	0	1:$1.1600 10:$1.0100 100:$0.7750 500:$0.5740 1000:$0.4590
SI4431CDY-T1-GE3 DISTI # C1S806001150894	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R RoHS: Compliant	560	500:$0.3580 250:$0.4230 100:$0.4550 50:$0.5700 10:$0.6100 1:$2.9100
SI4431CDY-T1-GE3 DISTI # C1S803600845024	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R RoHS: Compliant	2804	250:$0.4176 100:$0.4354 25:$0.5554 10:$0.5617
SI4431BDY-T1-E3	Vishay Intertechnologies	MOSFET 30V (D-S) 7.5A RoHS: Compliant	Americas - 20000
SI4431CDY-T1-GE3.	Vishay Intertechnologies	MOSFET 30V 9.0A 4.2W 32mohm @ 10V RoHS: Compliant	Americas - 500	25:$0.3770
SI4431CDY-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs SO-8 RoHS: Compliant	Americas - 2500

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SI4431CDY-T1-GE3 OMO.#: OMO-SI4431CDY-T1-GE3	MOSFET -30V Vds 20V Vgs SO-8
	Mfr.#: SI4431CDY-T1-E3 OMO.#: OMO-SI4431CDY-T1-E3	MOSFET -30V Vds 20V Vgs SO-8
	Mfr.#: SI4431CDY OMO.#: OMO-SI4431CDY-1190	Neu und Original
	Mfr.#: SI4431CDY-GE3-S OMO.#: OMO-SI4431CDY-GE3-S-1190	Neu und Original
	Mfr.#: SI4431CDY-T1-E3 OMO.#: OMO-SI4431CDY-T1-E3-VISHAY	MOSFET P-CH 30V 9A 8SOIC
	Mfr.#: SI4431CDY-T1-GE3 OMO.#: OMO-SI4431CDY-T1-GE3-VISHAY	MOSFET P-CH 30V 9A 8-SOIC
	Mfr.#: SI4431CDY-T1-GE3-S OMO.#: OMO-SI4431CDY-T1-GE3-S-1190	Neu und Original
	Mfr.#: SI4431CDY-TI-GE3 OMO.#: OMO-SI4431CDY-TI-GE3-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3500
Menge eingeben:

Der aktuelle Preis von SI4431CDY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,30 $~~; ~~0,30 $~~

10: ~~0,29 $~~; ~~2,88 $~~

100: ~~0,27 $~~; ~~27,31 $~~

500: ~~0,26 $~~; ~~128,95 $~~

1000: ~~0,24 $~~; ~~242,70 $~~

Beginnen mit

SI4431CDY-T1 3
SI4431CDY-T 4
SI4431C 6
SI4431 34
SI443 128
SI44 574
SI4 2994

SI4431CDY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes