SIHP12N65E-GE3

SIHP12N65E-GE3
Mfr. #:
SIHP12N65E-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 650V Vds 30V Vgs TO-220AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHP12N65E-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHP12N65E-GE3 DatasheetSIHP12N65E-GE3 Datasheet (P4-P6)SIHP12N65E-GE3 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
SIHP12N65E-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220AB-3
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
12 A
Rds On - Drain-Source-Widerstand:
380 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
35 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
156 W
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Serie:
E
Marke:
Vishay / Siliconix
Abfallzeit:
18 ns
Produktart:
MOSFET
Anstiegszeit:
19 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
35 ns
Typische Einschaltverzögerungszeit:
16 ns
Gewichtseinheit:
0.211644 oz
Tags
SIHP12N6, SIHP12N, SIHP12, SIHP1, SIHP, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E Series N Channel 650 V 156 W 0.38 O 70 nC Flange Mount Power MOSFET -TO-220AB
***ark
Mosfet, N-Ch, 650V, 12A, To-220Ab Rohs Compliant: Yes
***ronik
N-CH 650V 12A 380mOhm TO220-3
***S
new, original packaged
***
650V N-CHANNEL
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHP12N65E-GE3
DISTI # V36:1790_09218761
Vishay IntertechnologiesTrans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220AB
RoHS: Compliant
0
  • 1000000:$1.0430
  • 500000:$1.0470
  • 100000:$1.4240
  • 10000:$2.1380
  • 1000:$2.2600
SIHP12N65E-GE3
DISTI # SIHP12N65E-GE3-ND
Vishay SiliconixMOSFET N-CH 650V 12A TO-220AB
Min Qty: 1
Container: Tube
18In Stock
  • 5000:$1.0174
  • 2500:$1.0328
  • 1000:$1.1093
  • 500:$1.3388
  • 100:$1.6295
  • 10:$2.0270
  • 1:$2.2600
SIHP12N65E-GE3
DISTI # SIHP12N65E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 650V 12A 3-Pin TO-220AB - Tape and Reel (Alt: SIHP12N65E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$0.9808
  • 6000:$1.0079
  • 4000:$1.0366
  • 2000:$1.0805
  • 1000:$1.1135
SIHP12N65E-GE3
DISTI # 78-SIHP12N65E-GE3
Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs TO-220AB
RoHS: Compliant
45
  • 1:$2.2600
  • 10:$1.9100
  • 100:$1.6200
  • 500:$1.5400
  • 1000:$1.1000
  • 2500:$1.0300
  • 5000:$1.0100
SIHP12N65E-GE3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs TO-220AB
RoHS: Compliant
Americas -
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    OMO.#: OMO-RB161QS-40T18R-ROHM-SEMI

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    Verfügbarkeit
    Aktie:
    55
    Auf Bestellung:
    2038
    Menge eingeben:
    Der aktuelle Preis von SIHP12N65E-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,61 $
    2,61 $
    10
    2,35 $
    23,50 $
    100
    1,89 $
    189,00 $
    500
    1,47 $
    735,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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