PartNumber | SIHP100N60E-GE3 | SIHP050N60E-GE3 | SIHP065N60E-GE3 |
Description | MOSFET 650V Vds; 30V Vgs TO-220AB | MOSFET 650V Vds 30V Vgs TO-220AB | MOSFET 600V Vds 30V Vgs TO-220AB |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220AB-3 | TO-220AB-3 | TO-220AB-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Id Continuous Drain Current | 30 A | 51 A | 40 A |
Rds On Drain Source Resistance | 100 mOhms | 50 mOhms | 57 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | 3 V | 3 V |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Qg Gate Charge | 50 nC | 130 nC | 98 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 208 W | 278 W | 250 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | - | - |
Series | E | E | E |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 11 S | 12 S | - |
Fall Time | 20 ns | 48 ns | 13 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 34 ns | 82 ns | 46 ns |
Factory Pack Quantity | 50 | - | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 33 ns | 67 ns | 54 ns |
Typical Turn On Delay Time | 21 ns | 35 ns | 28 ns |
Unit Weight | - | - | 0.063493 oz |
Hersteller | Teil # | Beschreibung | RFQ |
---|---|---|---|
Vishay / Siliconix |
SIHP100N60E-GE3 | MOSFET 650V Vds; 30V Vgs TO-220AB | |
SIHP050N60E-GE3 | MOSFET 650V Vds 30V Vgs TO-220AB | ||
SIHP065N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
SIHP11N80E-GE3 | MOSFET 800V Vds 30V Vgs TO-220AB | ||
SIHP12N60E-E3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
SIHP15N60E-E3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
SIHP15N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
SIHP12N50C-E3 | MOSFET N-Channel 500V | ||
SIHP12N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
SIHP15N50E-GE3 | MOSFET 500V Vds 30V Vgs TO-220AB | ||
SIHP14N50D-GE3 | MOSFET 500V Vds 30V Vgs TO-220AB | ||
SIHP10N40D-E3 | MOSFET 400V Vds 30V Vgs TO-220AB | ||
SIHP12N65E-GE3 | MOSFET 650V Vds 30V Vgs TO-220AB | ||
SIHP125N60EF-GE3 | MOSFET EF Series Power MOSFET With Fast Body Diode | ||
SIHP120N60E-GE3 | MOSFET 650V Vds; 30V Vgs TO-220AB | ||
SIHP105N60EF-GE3 | MOSFET EF Series Power MOSFET With Fast Body Diode | ||
SIHP12N50E-GE3 | MOSFET 500V Vds 30V Vgs TO-220AB | ||
SIHP14N50D-E3 | MOSFET 500V Vds 30V Vgs TO-220AB | ||
SIHP10N40D-GE3 | MOSFET 400V Vds 30V Vgs TO-220AB | ||
SIHP14N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
Vishay |
SIHP12N65E-GE3 | IGBT Transistors MOSFET 650V 392Ohm@10V 12A N-Ch E-SRS | |
SIHP10N40D-GE3 | IGBT Transistors MOSFET 450V 600mOhms@10V 10A N-Ch D-SRS | ||
SIHP12N60E-GE3 | IGBT Transistors MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS | ||
SIHP15N50E-GE3 | IGBT Transistors MOSFET N-Channel 500V | ||
SIHP12N50E-GE3 | IGBT Transistors MOSFET N-Channel 500V | ||
SIHP14N50D-GE3 | RF Bipolar Transistors MOSFET MOSFET N-CHANNEL 500V | ||
SIHP11N80E-GE3 | MOSFET N-CH 800V 12A TO220AB | ||
SIHP065N60E-GE3 | MOSFET N-CH 600V 40A TO220AB | ||
SIHP10N40D-E3 | MOSFET N-CH 400V 10A TO-220AB | ||
SIHP12N50C-E3 | MOSFET N-CH 500V 12A TO-220AB | ||
SIHP12N60E-E3 | MOSFET N-CH 600V 12A TO220AB | ||
SIHP14N50D-E3 | MOSFET N-CH 500V 14A TO-200AB | ||
SIHP15N60E-E3 | MOSFET N-CH 600V 15A TO220AB | ||
SIHP050N60E-GE3 | E Series Power MOSFET TO220AB, 50 m @ 10V | ||
SIHP100N60E-GE3 | E Series Power MOSFET TO-220AB, 100 m @ 10V | ||
SIHP120N60E-GE3 | E Series Power MOSFET TO-220AB, 120 m @ 10V | ||
SIHP14N60E-GE3 | Power MOSFET | ||
SIHP10N40D | Neu und Original | ||
SIHP11N80E | Neu und Original | ||
SIHP1260EGE3 | Neu und Original | ||
SIHP12N50 | Neu und Original | ||
SIHP12N50C | Neu und Original | ||
SIHP12N50C-E3,P12N50C | Neu und Original | ||
SIHP12N50CE3 | Power Field-Effect Transistor, 12A I(D), 500V, 0.555ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
SIHP12N60E | Neu und Original | ||
SIHP12N65E | Neu und Original | ||
SIHP14N50D | Neu und Original | ||
SIHP14N60EGE3 | Power Field-Effect Transistor, 13A I(D), 600V, 0.309ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
SIHP15N50E | Neu und Original | ||
SIHP15N60E | Neu und Original |