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SIHP11N80E-GE3

SIHP11N80E-GE3
Mfr. #:
SIHP11N80E-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 800V Vds 30V Vgs TO-220AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHP11N80E-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHP11N80E-GE3 DatasheetSIHP11N80E-GE3 Datasheet (P4-P6)SIHP11N80E-GE3 Datasheet (P7)
ECAD Model:
Mehr Informationen:
SIHP11N80E-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220AB-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
800 V
Id - Kontinuierlicher Drainstrom:
12 A
Rds On - Drain-Source-Widerstand:
380 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
88 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
179 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Serie:
E
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Abfallzeit:
18 ns
Produktart:
MOSFET
Anstiegszeit:
15 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
55 ns
Typische Einschaltverzögerungszeit:
18 ns
Gewichtseinheit:
0.063493 oz
Tags
SIHP1, SIHP, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET N-CH 800V 12A 3-Pin TO-220AB
***el Electronic
MOSFET N-CHAN 850V TO-220AB
***ical
E Series Power MOSFET
***ure Electronics
AVAILABLE Q2/2016
***
N-CHANNEL 800V
***ark
Mosfet, N-Ch, 800V, 12A, To-220Ab; Transistor Polarity:n Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.38Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHP11N80E-GE3
DISTI # SIHP11N80E-GE3-ND		Vishay SiliconixMOSFET N-CH 800V 12A TO220AB
RoHS: Not compliant
Min Qty: 1
Container: Tube		27In Stock
  • 3000:$1.7766
  • 1000:$1.8654
  • 100:$2.5983
  • 25:$2.9980
  • 10:$3.1710
  • 1:$3.5300
SIHP11N80E-GE3
DISTI # SIHP11N80E-GE3		Vishay IntertechnologiesE Series Power MOSFET N-Channel 800V VDS ±30V VGS 12A ID 3-Pin TO-220AB - Tape and Reel (Alt: SIHP11N80E-GE3)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 6000:$1.5900
  • 10000:$1.5900
  • 2000:$1.6900
  • 4000:$1.6900
  • 1000:$1.7900
SIHP11N80E-GE3
DISTI # 59AC7409		Vishay IntertechnologiesN-CHANNEL 800V0
  • 1000:$2.1900
  • 500:$2.3300
  • 250:$2.5000
  • 100:$2.7300
  • 1:$3.3400
SIHP11N80E-GE3
DISTI # 78-SIHP11N80E-GE3		Vishay IntertechnologiesMOSFET 800V Vds 30V Vgs TO-220AB
RoHS: Compliant		1067
  • 1:$3.5600
  • 10:$2.9500
  • 100:$2.4300
  • 250:$2.3500
  • 500:$2.1100
SIHP11N80E-GE3
DISTI # TMOS2409		Vishay IntertechnologiesN-CH 850V 12A 380mOhm TO220AB
RoHS: Compliant		Stock DE - 0Stock HK - 0Stock US - 0
  • 1000:$2.0000
SIHP11N80E-GE3
DISTI # 2772345		Vishay IntertechnologiesMOSFET, N-CH, 800V, 12A, TO-220AB
RoHS: Compliant		997
  • 5000:$2.7400
  • 3000:$2.8400
  • 1000:$2.9900
  • 500:$3.5400
  • 100:$4.3800
  • 10:$5.3400
  • 1:$5.9700
SIHP11N80E-GE3
DISTI # 2772345		Vishay IntertechnologiesMOSFET, N-CH, 800V, 12A, TO-220AB997
  • 500:£1.6400
  • 250:£1.8300
  • 100:£1.8900
  • 10:£2.3000
  • 1:£3.1100
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 Headers & Wire Housings CONNECTOR
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von SIHP11N80E-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,56 $
3,56 $
10
2,95 $
29,50 $
100
2,43 $
243,00 $
250
2,35 $
587,50 $
500
2,11 $
1 055,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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