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FDS6672A

FDS6672A
Mfr. #:
FDS6672A
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET SO-8 N-CH 30V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDS6672A Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FDS6672A DatasheetFDS6672A Datasheet (P4-P5)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
12.5 A
Rds On - Drain-Source-Widerstand:
6.8 mOhms
Vgs - Gate-Source-Spannung:
12 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
3.9 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
75 S
Abfallzeit:
28 ns
Produktart:
MOSFET
Anstiegszeit:
18 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
69 ns
Typische Einschaltverzögerungszeit:
17 ns
Teil # Aliase:
FDS6672A_NL
Gewichtseinheit:
0.002998 oz
Tags
FDS6672A, FDS6672, FDS667, FDS66, FDS6, FDS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 30V 12.5A 8SOIC
***S
French Electronic Distributor since 1988
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:12.5A; Drain Source On Resistance @ 10V:0.008ohm; Leaded Process Compatible:Yes; Package/Case:8-SOIC; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
***ical
Trans MOSFET N-CH 30V 15A 8-Pin SOIC N T/R
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 15A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***inecomponents.com
30V/12V, 7.5MO, NCH, SINGLE, SO8W, 300A GOX, PTII
***S
French Electronic Distributor since 1988
***ment14 APAC
MOSFET, N CH, 30V, 15A, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.1V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:15A; Package / Case:SOIC-8; Power Dissipation Pd:2.5W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V
***ure Electronics
P-Channel 30 V 7.8 mOhm PowerTrench Mosfet - SOIC-8
***emi
P-Channel PowerTrench® MOSFET -30V, 14.5A, 7.8mΩ
***rchild Semiconductor
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
***nell
MOSFET, P CH, 30V, 14.5A, 8SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-14.5A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.9V; Power Dissipation Pd:1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***Yang
TRANS MOSFET N-CH 30V 16A 8SOIC - Rail/Tube
***i-Key
MOSFET N-CH 30V 16A 8-SOIC
***ser
MOSFETs 30V N-Ch PowerTrench
***el Nordic
Contact for details
***ical
Trans MOSFET N-CH 30V 16A 8-Pin SOIC T/R
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:16A; On Resistance, Rds(on):0.006ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: No
***nell
MOSFET, N, SMD, SO-8; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:16A; Resistance, Rds On:0.006ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.8V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:50A; No. of Pins:8; Power Dissipation:2.5mW; Transistors, No. of:1; Voltage, Vds Max:30V
***i-Key
MOSFET P-CH 30V 14.5A 8SOIC
***ser
MOSFETs 30V, SO8 ,PCH POWER TRENCH MOSFET
***el Nordic
Contact for details
***ment14 APAC
P CHANNEL, MOSFET, -30V, -16A, SOIC; TRA; Transistor Polarity:P Channel; Continuous Drain Current Id:-16A;
***ure Electronics
Single P-Channel 30 V 10.2 mOhm 31 nC HEXFET® Power Mosfet - SOIC-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ineon
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
***nell
MOSFET,P CH,30V,16A,SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -16A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0054ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.8V; Power
Teil # Mfg. Beschreibung Aktie Preis
FDS6672A
DISTI # FDS6672A-ND		ON SemiconductorMOSFET N-CH 30V 12.5A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    FDS6672A
    DISTI # 512-FDS6672A    		ON SemiconductorMOSFET SO-8 N-CH 30V
    RoHS: Compliant    		0
      FDS6672AFairchild Semiconductor CorporationPower Field-Effect Transistor, 12.5A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant      		259608
      • 1000:$1.5000
      • 500:$1.5800
      • 100:$1.6400
      • 25:$1.7100
      • 1:$1.8500
      FDS6672AFairchild Semiconductor CorporationMOSFET Transistor, N-Channel, SO1967
      • 1:$0.4800
      FDS6672AMIXEMOSFET Transistor, N-Channel, SO4235
      • 3572:$0.3600
      • 1668:$0.4200
      • 1:$1.2000
      Bild Teil # Beschreibung
      FDS6672A

      Mfr.#: FDS6672A

      OMO.#: OMO-FDS6672A

      		 MOSFET SO-8 N-CH 30V
      FDS6690AS

      Mfr.#: FDS6690AS

      OMO.#: OMO-FDS6690AS-ON-SEMICONDUCTOR

      		 MOSFET N-CH 30V 10A 8SOIC
      FDS6676AS SOP8

      Mfr.#: FDS6676AS SOP8

      OMO.#: OMO-FDS6676AS-SOP8-1190

      		 Neu und Original
      FDS6681Z-NL

      Mfr.#: FDS6681Z-NL

      OMO.#: OMO-FDS6681Z-NL-1190

      		 Neu und Original
      FDS6688-NL

      Mfr.#: FDS6688-NL

      OMO.#: OMO-FDS6688-NL-1190

      		 Neu und Original
      FDS6692S

      Mfr.#: FDS6692S

      OMO.#: OMO-FDS6692S-1190

      		 Neu und Original
      FDS6694A-NL

      Mfr.#: FDS6694A-NL

      OMO.#: OMO-FDS6694A-NL-1190

      		 Neu und Original
      FDS6900AS

      Mfr.#: FDS6900AS

      OMO.#: OMO-FDS6900AS-ON-SEMICONDUCTOR

      		 MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC
      FDS6975-NL

      Mfr.#: FDS6975-NL

      OMO.#: OMO-FDS6975-NL-1190

      		 Neu und Original
      FDS6898AZ-CUT TAPE

      Mfr.#: FDS6898AZ-CUT TAPE

      OMO.#: OMO-FDS6898AZ-CUT-TAPE-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3500
      Menge eingeben:
      Der aktuelle Preis von FDS6672A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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