SIHD6N80E-GE3

Mfr. #:: SIHD6N80E-GE3
Hersteller:: Vishay
Beschreibung:: MOSFET N-CHAN 800V TO-252
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SIHD6N80E-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: SIHD6N80E-GE3 Mehr Informationen

Produkteigenschaft
Attributwert

Tags: SIHD6, SIHD, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHD6N80E-GE3 Beschreibung

***et Japan: Transistor MOSFET N-CH 800V 5.4A 3-Pin TO-252

***ical: Trans MOSFET N-CH 800V 5.4A 3-Pin(2+Tab) TO-252AA

***ment14 APAC: MOSFET, N-CH, 800V, 5.4A, 150DEG C, 78W

***ark: MOSFET, N-CH, 800V, 5.4A, 150DEG C, 78W; Transistor Polarity:N Channel; Continuous Drain Current Id:5.4A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.82ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

SIHD6N80E-GE3 Mehr Informationen

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SIHD6N80E-GE3 DISTI # V99:2348_21764828	Vishay Intertechnologies	SIHD6N80E-GE3	2940	3000:$0.9135 1000:$0.9791 500:$1.1955 100:$1.3472 10:$1.7678 1:$2.3215
SIHD6N80E-GE3 DISTI # SIHD6N80E-GE3-ND	Vishay Siliconix	MOSFET N-CHAN 800V TO-252 RoHS: Compliant Min Qty: 1 Container: Bulk	2973In Stock	5000:$0.9378 2500:$0.9738 1000:$1.0460 500:$1.2624 100:$1.5365 10:$1.9120 1:$2.1300
SIHD6N80E-GE3 DISTI # 29435235	Vishay Intertechnologies	SIHD6N80E-GE3	2940	3000:$0.9135 1000:$0.9791 500:$1.1955 100:$1.3472 10:$1.7678 8:$2.3215
SIHD6N80E-GE3 DISTI # SIHD6N80E-GE3	Vishay Intertechnologies	E Series Power MOSFET Single N-Channel 800V VDS ±30V 5.4A ID Thin Lead 3-Pin DPAK - Tape and Reel (Alt: SIHD6N80E-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.8799 18000:$0.9049 12000:$0.9299 6000:$0.9699 3000:$0.9999
SIHD6N80E-GE3 DISTI # 59AC7384	Vishay Intertechnologies	N-CHANNEL 800V	0	2500:$0.9000 1000:$1.0100 500:$1.1600 100:$1.2900 50:$1.4500 25:$1.5800 10:$1.7100 1:$2.0900
SIHD6N80E-GE3 DISTI # 78-SIHD6N80E-GE3	Vishay Intertechnologies	MOSFET 800V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant	2706	1:$2.1400 10:$1.7800 100:$1.3800 500:$1.2100 1000:$0.9970
SIHD6N80E-GE3 DISTI # 2932925	Vishay Intertechnologies	MOSFET, N-CH, 800V, 5.4A, 150DEG C, 78W RoHS: Compliant	0	1000:$1.5500 500:$1.6400 250:$1.9300 100:$2.3400 10:$2.9900 1:$3.6200
SIHD6N80E-GE3 DISTI # 2932925	Vishay Intertechnologies	MOSFET, N-CH, 800V, 5.4A, 150DEG C, 78W	0	500:£0.8870 250:£0.9470 100:£1.0100 10:£1.3200 1:£1.7800

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SIHD6N65E-GE3 OMO.#: OMO-SIHD6N65E-GE3	MOSFET 650V Vds 30V Vgs DPAK (TO-252)
	Mfr.#: SIHD6N62E-GE3 OMO.#: OMO-SIHD6N62E-GE3	MOSFET 620V Vds 30V Vgs DPAK (TO-252)
	Mfr.#: SIHD6N65ET1-GE3 OMO.#: OMO-SIHD6N65ET1-GE3	MOSFET 650V Vds E Series DPAK TO-252
	Mfr.#: SIHD6N62E-GE3-CUT TAPE OMO.#: OMO-SIHD6N62E-GE3-CUT-TAPE-1190	Neu und Original
	Mfr.#: SIHD6N62E OMO.#: OMO-SIHD6N62E-1190	Neu und Original
	Mfr.#: SIHD6N65E OMO.#: OMO-SIHD6N65E-1190	Neu und Original
	Mfr.#: SIHD6N65ET1-GE3 OMO.#: OMO-SIHD6N65ET1-GE3-VISHAY	MOSFET N-CH 650V 7A TO252AA
	Mfr.#: SIHD6N62ET1-GE3 OMO.#: OMO-SIHD6N62ET1-GE3-VISHAY	MOSFET N-CH 620V 6A TO252AA
	Mfr.#: SIHD6N65ET5-GE3 OMO.#: OMO-SIHD6N65ET5-GE3-VISHAY	MOSFET N-CH 650V 7A TO252AA
	Mfr.#: SIHD6N80E-GE3 OMO.#: OMO-SIHD6N80E-GE3-VISHAY	MOSFET N-CHAN 800V TO-252

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1500
Menge eingeben:

Der aktuelle Preis von SIHD6N80E-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

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1000: ~~0,00 $~~; ~~0,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

SIHD6 11
SIHD 46
SIH 797

SIHD6N80E-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes