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SIHD6N65ET1-GE3

SIHD6N65ET1-GE3
Mfr. #:
SIHD6N65ET1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 650V Vds E Series DPAK TO-252
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHD6N65ET1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHD6N65ET1-GE3 DatasheetSIHD6N65ET1-GE3 Datasheet (P4-P6)SIHD6N65ET1-GE3 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
SIHD6N65ET1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
7 A
Rds On - Drain-Source-Widerstand:
500 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
24 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
78 W
Aufbau:
Single
Verpackung:
Spule
Serie:
E
Marke:
Vishay / Siliconix
Abfallzeit:
20 ns
Produktart:
MOSFET
Anstiegszeit:
12 ns
Werkspackungsmenge:
2000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
30 ns
Typische Einschaltverzögerungszeit:
14 ns
Gewichtseinheit:
0.011993 oz
Tags
SIHD6N65ET, SIHD6N65, SIHD6N6, SIHD6, SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Power MOSFET N-Channel 650V 7A 3-Pin DPAK T/R
***i-Key
MOSFET N-CH 650V 7A TO252AA
*** Europe
N-CH SINGLE 650V TO252
***ark
N-Channel 650V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHD6N65ET1-GE3
DISTI # SIHD6N65ET1-GE3-ND		Vishay SiliconixMOSFET N-CH 650V 7A TO252AA
RoHS: Not compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2000:$0.7371
SIHD6N65ET1-GE3
DISTI # SIHD6N65ET1-GE3		Vishay IntertechnologiesPower MOSFET N-Channel 650V 7A 3-Pin DPAK T/R - Tape and Reel (Alt: SIHD6N65ET1-GE3)
RoHS: Not Compliant
Min Qty: 2000
Container: Reel		Americas - 0
  • 20000:$0.6659
  • 12000:$0.6849
  • 8000:$0.7039
  • 4000:$0.7339
  • 2000:$0.7559
SIHD6N65ET1-GE3
DISTI # 78-SIHD6N65ET1-GE3		Vishay IntertechnologiesMOSFET 650V Vds E Series DPAK TO-252
RoHS: Compliant		0
  • 2000:$0.7030
  • 4000:$0.6770
  • 10000:$0.6500
Bild Teil # Beschreibung
SIHD6N65E-GE3

Mfr.#: SIHD6N65E-GE3

OMO.#: OMO-SIHD6N65E-GE3

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SIHD6N65ET1-GE3

Mfr.#: SIHD6N65ET1-GE3

OMO.#: OMO-SIHD6N65ET1-GE3

 MOSFET 650V Vds E Series DPAK TO-252
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Mfr.#: SIHD6N65E-GE3

OMO.#: OMO-SIHD6N65E-GE3-VISHAY

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OMO.#: OMO-SIHD6N62E-GE3-VISHAY

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SIHD6N62E-GE3-CUT TAPE

Mfr.#: SIHD6N62E-GE3-CUT TAPE

OMO.#: OMO-SIHD6N62E-GE3-CUT-TAPE-1190

 Neu und Original
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Mfr.#: SIHD6N62E

OMO.#: OMO-SIHD6N62E-1190

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OMO.#: OMO-SIHD6N65EGE3-1190

 Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
SIHD6N65ET4-GE3

Mfr.#: SIHD6N65ET4-GE3

OMO.#: OMO-SIHD6N65ET4-GE3-VISHAY

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SIHD6N65ET5-GE3

Mfr.#: SIHD6N65ET5-GE3

OMO.#: OMO-SIHD6N65ET5-GE3-VISHAY

 MOSFET N-CH 650V 7A TO252AA
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von SIHD6N65ET1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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