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SIHD6N62E-GE3

SIHD6N62E-GE3
Mfr. #:
SIHD6N62E-GE3
Hersteller:
Vishay
Beschreibung:
RF Bipolar Transistors MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHD6N62E-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIHD6N62E-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SIHD6N62, SIHD6N6, SIHD6, SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E Series N Channel 620 V 900 mO 34 nC Surface Mount Power Mosfet - DPAK
***ical
Trans MOSFET N-CH 620V 6A 3-Pin(2+Tab) DPAK
***et Europe
Trans MOSFET N-CH 620V 6A 3-Pin DPAK
***i-Key
MOSFET N-CH 620V 6A TO-252
***ark
N-CHANNEL 620V
***ment14 APAC
Prices include import duty and tax. MOSFET, N CH, 620V, 6A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:620V; On Resistance Rds(on):0.78ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Power Dissipation Pd:78W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C
***nell
MOSFET, CANALE N, 620V, 6A, TO-252-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6A; Tensione Drain Source Vds:620V; Resistenza di Attivazione Rds(on):0.78ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:-; Dissipazione di Potenza Pd:78W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Temperatura di Esercizio Min:-55°C
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHD6N62E-GE3
DISTI # 31638809		Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin(2+Tab) DPAK
RoHS: Compliant		2970
  • 3000:$0.6149
  • 1000:$0.6312
  • 500:$0.8908
  • 100:$1.0447
  • 10:$1.3002
SIHD6N62E-GE3
DISTI # V99:2348_09218403		Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin(2+Tab) DPAK
RoHS: Compliant		2970
  • 3000:$0.6149
  • 1000:$0.6312
  • 500:$0.8908
  • 100:$1.0447
  • 10:$1.3002
  • 1:$1.5349
SIHD6N62E-GE3
DISTI # V36:1790_09218403		Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin(2+Tab) DPAK
RoHS: Compliant		0
  • 3000000:$0.6417
  • 1500000:$0.6446
  • 300000:$0.9259
  • 30000:$1.4340
  • 3000:$1.5200
SIHD6N62E-GE3
DISTI # SIHD6N62E-GE3-ND		Vishay SiliconixMOSFET N-CH 620V 6A TO-252
Min Qty: 1
Container: Tube		3090In Stock
  • 5000:$0.6259
  • 2500:$0.6588
  • 500:$0.8941
  • 100:$1.0824
  • 25:$1.3176
  • 10:$1.3880
  • 1:$1.5500
SIHD6N62E-GE3
DISTI # SIHD6N62E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin DPAK (Alt: SIHD6N62E-GE3)
Min Qty: 3000		Europe - 0
  • 30000:€0.5529
  • 18000:€0.5779
  • 12000:€0.6539
  • 6000:€0.8069
  • 3000:€1.1249
SIHD6N62E-GE3
DISTI # SIHD6N62E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin DPAK - Tape and Reel (Alt: SIHD6N62E-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.6029
  • 18000:$0.6199
  • 12000:$0.6369
  • 6000:$0.6639
  • 3000:$0.6849
SIHD6N62E-GE3
DISTI # 78-SIHD6N62E-GE3		Vishay IntertechnologiesMOSFET 620V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		4048
  • 1:$1.5500
  • 10:$1.3100
  • 100:$1.0500
  • 500:$0.8940
  • 1000:$0.6580
  • 3000:$0.6250
  • 9000:$0.6020
SIHD6N62E-GE3Vishay IntertechnologiesMOSFET 620V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		Americas -
    SIHD6N62E-GE3
    DISTI # 2400378    		Vishay IntertechnologiesMOSFET, N CH, 620V, 6A, TO-252-3
    RoHS: Compliant    		0
    • 5025:$0.9840
    • 2550:$1.0400
    • 525:$1.4100
    • 150:$1.7100
    • 75:$2.0700
    • 10:$2.1900
    • 1:$2.4400
    SIHD6N62E-GE3
    DISTI # 2400378    		Vishay IntertechnologiesMOSFET, N CH, 620V, 6A, TO-252-3
    RoHS: Compliant    		10
    • 5000:£0.5420
    • 1000:£0.5710
    • 500:£0.6830
    • 250:£0.7380
    • 100:£0.7930
    • 10:£1.0800
    • 1:£1.4200
    Bild Teil # Beschreibung
    SIHD6N65ET1-GE3

    Mfr.#: SIHD6N65ET1-GE3

    OMO.#: OMO-SIHD6N65ET1-GE3

    		 MOSFET 650V Vds E Series DPAK TO-252
    SIHD6N65ET5-GE3

    Mfr.#: SIHD6N65ET5-GE3

    OMO.#: OMO-SIHD6N65ET5-GE3

    		 MOSFET 650V Vds E Series DPAK TO-252
    SIHD6N65E-GE3

    Mfr.#: SIHD6N65E-GE3

    OMO.#: OMO-SIHD6N65E-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS
    SIHD6N62E-GE3

    Mfr.#: SIHD6N62E-GE3

    OMO.#: OMO-SIHD6N62E-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS
    SIHD6N62E-GE3-CUT TAPE

    Mfr.#: SIHD6N62E-GE3-CUT TAPE

    OMO.#: OMO-SIHD6N62E-GE3-CUT-TAPE-1190

    		 Neu und Original
    SIHD6N65E

    Mfr.#: SIHD6N65E

    OMO.#: OMO-SIHD6N65E-1190

    		 Neu und Original
    SIHD6N65EGE3

    Mfr.#: SIHD6N65EGE3

    OMO.#: OMO-SIHD6N65EGE3-1190

    		 Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    SIHD6N65ET4-GE3

    Mfr.#: SIHD6N65ET4-GE3

    OMO.#: OMO-SIHD6N65ET4-GE3-VISHAY

    		 MOSFET N-CH 650V 7A TO252AA
    SIHD6N65ET5-GE3

    Mfr.#: SIHD6N65ET5-GE3

    OMO.#: OMO-SIHD6N65ET5-GE3-VISHAY

    		 MOSFET N-CH 650V 7A TO252AA
    SIHD6N80E-GE3

    Mfr.#: SIHD6N80E-GE3

    OMO.#: OMO-SIHD6N80E-GE3-VISHAY

    		 MOSFET N-CHAN 800V TO-252
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1500
    Menge eingeben:
    Der aktuelle Preis von SIHD6N62E-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,85 $
    0,85 $
    10
    0,80 $
    8,04 $
    100
    0,76 $
    76,15 $
    500
    0,72 $
    359,60 $
    1000
    0,68 $
    676,90 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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