SIHD6N65E-GE3

Mfr. #:: SIHD6N65E-GE3
Hersteller:: Vishay
Beschreibung:: RF Bipolar Transistors MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SIHD6N65E-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: SIHD6N65E-GE3 Mehr Informationen

Produkteigenschaft
Attributwert

Tags: SIHD6N65, SIHD6N6, SIHD6, SIHD, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHD6N65E-GE3 Beschreibung

***ure Electronics: E Series N-Channel 650 V 78 W 0.6 O 48 nC Surface Mount Power Mosfet - DPAK

***ical: Trans MOSFET N-CH 650V 7A 3-Pin(2+Tab) DPAK

***et Europe: Trans MOSFET N-CH 650V 7A 3-Pin TO-252

***i-Key: MOSFET N-CH 650V 7A TO252

***ark: N-CHANNEL 650V

***nell: MOSFET, N-CH, 650V, 7A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 650V, 7A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:78W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C

SIHD6N65E-GE3 Mehr Informationen

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SIHD6N65E-GE3 DISTI # V99:2348_09218426	Vishay Intertechnologies	Trans MOSFET N-CH 650V 7A 3-Pin(2+Tab) DPAK RoHS: Compliant	1342	3000:$0.6794 1000:$0.7977 500:$0.8813 100:$1.0153 10:$1.3180 1:$1.7552
SIHD6N65E-GE3 DISTI # V36:1790_09218426	Vishay Intertechnologies	Trans MOSFET N-CH 650V 7A 3-Pin(2+Tab) DPAK RoHS: Compliant	0	3000000:$0.7090 1500000:$0.7113 300000:$0.8899 30000:$1.1900 3000:$1.2400
SIHD6N65E-GE3 DISTI # SIHD6N65E-GE3-ND	Vishay Siliconix	MOSFET N-CH 650V 7A TO252 Min Qty: 1 Container: Tube	On Order	5000:$0.6916 2500:$0.7020 500:$0.9100 100:$1.1076 25:$1.3000 10:$1.3780 1:$1.5300
SIHD6N65E-GE3 DISTI # 25872616	Vishay Intertechnologies	Trans MOSFET N-CH 650V 7A 3-Pin(2+Tab) DPAK RoHS: Compliant	1342	3000:$0.6794 1000:$0.7977 500:$0.8813 100:$1.0153 10:$1.3180 9:$1.7552
SIHD6N65E-GE3 DISTI # SIHD6N65E-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 650V 7A 3-Pin TO-252 - Tape and Reel (Alt: SIHD6N65E-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.6659 18000:$0.6849 12000:$0.7039 6000:$0.7339 3000:$0.7559
SIHD6N65E-GE3 DISTI # 19X1933	Vishay Intertechnologies	MOSFET Transistor, N Channel, 7 A, 650 V, 0.5 ohm, 10 V, 2 V RoHS Compliant: Yes RoHS: Compliant	3690	500:$0.9110 100:$1.0400 50:$1.1400 25:$1.2400 10:$1.3400 1:$1.6100
SIHD6N65E-GE3 DISTI # 78-SIHD6N65E-GE3	Vishay Intertechnologies	MOSFET 650V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant	1	1:$1.6400 10:$1.3000 100:$1.0300 500:$0.9110 1000:$0.8840 3000:$0.7430
SIHD6N65EGE3	Vishay Intertechnologies	Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant	Europe - 3000
SIHD6N65E-GE3 DISTI # 2364075	Vishay Intertechnologies	MOSFET, N-CH, 650V, 7A, TO-252 RoHS: Compliant	3800	100:£0.9910 10:£1.3400 1:£1.7500
SIHD6N65E-GE3 DISTI # 2364075	Vishay Intertechnologies	MOSFET, N-CH, 650V, 7A, TO-252 RoHS: Compliant	3690	25:$2.0500 10:$2.1700 1:$2.4100

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SIHD6N80E-GE3 OMO.#: OMO-SIHD6N80E-GE3	MOSFET 800V Vds 30V Vgs DPAK (TO-252)
	Mfr.#: SIHD6N65E-GE3 OMO.#: OMO-SIHD6N65E-GE3	MOSFET 650V Vds 30V Vgs DPAK (TO-252)
	Mfr.#: SIHD6N62E-GE3 OMO.#: OMO-SIHD6N62E-GE3	MOSFET 620V Vds 30V Vgs DPAK (TO-252)
	Mfr.#: SIHD6N65ET1-GE3 OMO.#: OMO-SIHD6N65ET1-GE3	MOSFET 650V Vds E Series DPAK TO-252
	Mfr.#: SIHD6N65ET5-GE3 OMO.#: OMO-SIHD6N65ET5-GE3	MOSFET 650V Vds E Series DPAK TO-252
	Mfr.#: SIHD6N65E-GE3 OMO.#: OMO-SIHD6N65E-GE3-VISHAY	RF Bipolar Transistors MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS
	Mfr.#: SIHD6N62E-GE3-CUT TAPE OMO.#: OMO-SIHD6N62E-GE3-CUT-TAPE-1190	Neu und Original
	Mfr.#: SIHD6N65EGE3 OMO.#: OMO-SIHD6N65EGE3-1190	Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
	Mfr.#: SIHD6N62ET1-GE3 OMO.#: OMO-SIHD6N62ET1-GE3-VISHAY	MOSFET N-CH 620V 6A TO252AA
	Mfr.#: SIHD6N80E-GE3 OMO.#: OMO-SIHD6N80E-GE3-VISHAY	MOSFET N-CHAN 800V TO-252

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3500
Menge eingeben:

Der aktuelle Preis von SIHD6N65E-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,00 $~~; ~~1,00 $~~

10: ~~0,95 $~~; ~~9,49 $~~

100: ~~0,90 $~~; ~~89,90 $~~

500: ~~0,85 $~~; ~~424,50 $~~

1000: ~~0,80 $~~; ~~799,10 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

SIHD6N65 6
SIHD6N6 10
SIHD6 11
SIHD 46
SIH 797

SIHD6N65E-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes