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BUK9507-30B,127

BUK9507-30B,127
Mfr. #:
BUK9507-30B,127
Hersteller:
Nexperia
Beschreibung:
RF Bipolar Transistors MOSFET HIGH PERF TRENCHMOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BUK9507-30B,127 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BUK9507-30B,127 DatasheetBUK9507-30B,127 Datasheet (P4-P6)BUK9507-30B,127 Datasheet (P7-P9)BUK9507-30B,127 Datasheet (P10-P12)BUK9507-30B,127 Datasheet (P13-P15)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
NXP
Produktkategorie
FETs - Einzeln
RoHS
Einzelheiten
Marke
NXP Semiconductors
Montageart
Durchgangsloch
Paket / Koffer
TO-220-3
Anzahl der Kanäle
1 Channel
Transistor Polarität
N-Kanal
Vds - Drain-Source-Durchbruchspannung
30 V
ID - Kontinuierlicher Drainstrom
108 A
Rds On - Drain-Source-Widerstand
5 mOhms
Vgs - Gate-Source-Spannung
15 V
Maximale Betriebstemperatur
+ 175 C
Technologie
Si
Verpackung
Rohr
Kanalmodus
Erweiterung
Aufbau
Single
Abfallzeit
98 ns
Minimale Betriebstemperatur
- 55 C
Pd - Verlustleistung
157 W
Anstiegszeit
135 ns
Transistortyp
1 N-Channel
Typische Ausschaltverzögerungszeit
99 ns
Typische Einschaltverzögerungszeit
30 ns
Teil # Aliasse
BUK9507-30B
Gewichtseinheit
0.211644 oz
Tags
BUK9507, BUK950, BUK95, BUK9, BUK
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Trans MOSFET N-CH 30V 108A Automotive 3-Pin(3+Tab) TO-220AB Tube
***peria
N-channel TrenchMOS logic level FET
***or
PFET, 75A I(D), 30V, 0.009OHM, 1
***(Formerly Allied Electronics)
IRL3803VPBF N-channel MOSFET Transistor, 140 A, 30 V, 3-Pin TO-220
***ure Electronics
Single N-Channel 30 V 5.5 mOhm 76 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
***ow.cn
Trans MOSFET N-CH Si 30V 140A 3-Pin(3+Tab) TO-220AB Tube
***ment14 APAC
MOSFET, N, LOGIC, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:140A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:140A; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:470A; SMD Marking:IRL3803VPBF; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.006Ohm;ID 140A;TO-220AB;PD 200W;VGS +/-16V
*** Source Electronics
Trans MOSFET N-CH Si 30V 140A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 30V 140A TO-220AB
***ure Electronics
Single N-Channel 30 V 0.006 Ohm 140 nC HEXFET® Power Mosfet - TO-220-3
***ment14 APAC
MOSFET, N, 30V, 120A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:140A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:480A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V
***emi
N-Channel PowerTrench® MOSFET 30V, 114A, 5.3mΩ
***Yang
Trans MOSFET N-CH 30V 16A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***ter Electronics
30V,114A,5.3 OHM,N-CH,TO220,POWER TRENCH MOSFET
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***(Formerly Allied Electronics)
MOSFET, N Ch., 30V, 105A, 6 MOHM, 23 NCQG, TO-220AB, Pb-Free
***ure Electronics
Single N-Channel 30 V 6 mOhm 23 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop Global
Trans MOSFET N-CH 30V 105A 3-Pin(3+Tab) TO-220AB Tube
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
***ark
N Channel Mosfet, 30V, 105A, To-220Ab; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:105A; On Resistance Rds(On):0.006Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N, 30V, 105A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:105A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:105A; Junction to Case Thermal Resistance A:1.32°C/W; On State resistance @ Vgs = 10V:6ohm; Package / Case:TO-220AB; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:420A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V
***et Europe
Trans MOSFET N-CH 30V 85A 3-Pin(3+Tab) TO-220AB
***ronik
MOSFET 30V 85A 3.6mOhm TO220 RoHSconf
***ment14 APAC
MOSFET,N CH,W DIODE,30V,85A,TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78.1W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220AB; No. of Pins:3; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:20V
***ark
RAIL/30V,92A,5.9m ohm ,NCH,TO220,POWER TRENCH MOSFET
***Yang
Trans MOSFET N-CH 30V 16A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***emi
N-Channel PowerTrench® MOSFET 30V, 92A, 5.9mΩ
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Teil # Mfg. Beschreibung Aktie Preis
BUK9507-30B,127
DISTI # C1S537100441902		NexperiaTrans MOSFET N-CH 30V 108A Automotive 3-Pin(3+Tab) TO-220AB Rail170
  • 50:$0.6470
  • 1:$0.6550
BUK9507-30B,127
DISTI # 568-5725-5-ND		NexperiaMOSFET N-CH 30V 75A TO220AB
RoHS: Compliant
Min Qty: 5000
Container: Tube		Limited Supply - Call
    BUK9507-30B,127
    DISTI # BUK9507-30B127    		NexperiaTrans MOSFET N-CH 30V 108A 3-Pin(3+Tab) TO-220AB Tube - Bulk (Alt: BUK9507-30B127)
    RoHS: Not Compliant
    Min Qty: 544
    Container: Bulk    		Americas - 0
    • 544:$0.6699
    • 546:$0.6439
    • 1090:$0.6189
    • 2720:$0.5959
    • 5440:$0.5849
    BUK9507-30B
    DISTI # 771-BUK9507-30B    		NexperiaMOSFET HIGH PERF TRENCHMOS
    RoHS: Compliant    		0
      BUK9507-30B,127
      DISTI # 771-BUK9507-30B127      		NexperiaMOSFET HIGH PERF TRENCHMOS
      RoHS: Compliant      		0
        BUK9507-30B127NXP SemiconductorsNow Nexperia BUK9507-30B - Power Field-Effect Transistor, 75A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
        RoHS: Not Compliant        		11973
        • 1000:$0.3800
        • 500:$0.4000
        • 100:$0.4200
        • 25:$0.4400
        • 1:$0.4700
        Bild Teil # Beschreibung
        BUK9507-30B

        Mfr.#: BUK9507-30B

        OMO.#: OMO-BUK9507-30B-1152

        		 MOSFET HIGH PERF TRENCHMOS
        BUK9507-30B127

        Mfr.#: BUK9507-30B127

        OMO.#: OMO-BUK9507-30B127-1190

        		 Now Nexperia BUK9507-30B - Power Field-Effect Transistor, 75A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
        BUK9507-30B,127

        Mfr.#: BUK9507-30B,127

        OMO.#: OMO-BUK9507-30B-127-NEXPERIA

        		 RF Bipolar Transistors MOSFET HIGH PERF TRENCHMOS
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        4500
        Menge eingeben:
        Der aktuelle Preis von BUK9507-30B,127 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        1,03 $
        1,03 $
        10
        0,98 $
        9,78 $
        100
        0,93 $
        92,61 $
        500
        0,87 $
        437,35 $
        1000
        0,82 $
        823,20 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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