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| PartNumber | BUK9507-30B | BUK9507-30B127 | BUK9507-30B,127 |
| Description | MOSFET HIGH PERF TRENCHMOS | Now Nexperia BUK9507-30B - Power Field-Effect Transistor, 75A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | RF Bipolar Transistors MOSFET HIGH PERF TRENCHMOS |
| Manufacturer | - | - | NXP |
| Product Category | - | - | FETs - Single |
| RoHS | - | - | Details |
| Brand | - | - | NXP Semiconductors |
| Mounting Style | - | - | Through Hole |
| Package / Case | - | - | TO-220-3 |
| Number of Channels | - | - | 1 Channel |
| Transistor Polarity | - | - | N-Channel |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 108 A |
| Rds On Drain Source Resistance | - | - | 5 mOhms |
| Vgs Gate Source Voltage | - | - | 15 V |
| Maximum Operating Temperature | - | - | + 175 C |
| Technology | - | - | Si |
| Packaging | - | - | Tube |
| Channel Mode | - | - | Enhancement |
| Configuration | - | - | Single |
| Fall Time | - | - | 98 ns |
| Minimum Operating Temperature | - | - | - 55 C |
| Pd Power Dissipation | - | - | 157 W |
| Rise Time | - | - | 135 ns |
| Transistor Type | - | - | 1 N-Channel |
| Typical Turn Off Delay Time | - | - | 99 ns |
| Typical Turn On Delay Time | - | - | 30 ns |
| Part # Aliases | - | - | BUK9507-30B |
| Unit Weight | - | - | 0.211644 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| BUK9507-30B | MOSFET HIGH PERF TRENCHMOS | ||
| BUK9507-30B127 | Now Nexperia BUK9507-30B - Power Field-Effect Transistor, 75A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
Nexperia |
BUK9507-30B,127 | RF Bipolar Transistors MOSFET HIGH PERF TRENCHMOS |