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HGTG20N60A4D

HGTG20N60A4D
Mfr. #:
HGTG20N60A4D
Hersteller:
ON Semiconductor
Beschreibung:
IGBT 600V 70A 290W TO247
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGTG20N60A4D Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Fairchild Semiconductor
Produktkategorie
IGBTs - Single
Serie
-
Verpackung
Rohr
Teil-Aliasnamen
HGTG20N60A4D_NL
Gewichtseinheit
0.225401 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-247-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-247
Aufbau
Single
Leistung max
290W
Reverse-Recovery-Time-trr
35ns
Strom-Kollektor-Ic-Max
70A
Spannungs-Kollektor-Emitter-Breakdown-Max
600V
IGBT-Typ
-
Strom-Kollektor-gepulster-Icm
280A
Vce-on-Max-Vge-Ic
2.7V @ 15V, 20A
Schaltenergie
105μJ (on), 150μJ (off)
Gate-Gebühr
142nC
Td-ein-aus-25°C
15ns/73ns
Testbedingung
390V, 20A, 3 Ohm, 15V
Pd-Verlustleistung
290 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
600 V
Kollektor-Emitter-Sättigungsspannung
1.8 V
Kontinuierlicher Kollektorstrom-bei-25-C
70 A
Gate-Emitter-Leckstrom
+/- 250 nA
Maximale Gate-Emitter-Spannung
+/- 20 V
Kontinuierlicher Kollektor-Strom-Ic-Max
70 A
Tags
HGTG20N60A4D, HGTG20N60A, HGTG20N6, HGTG20, HGTG2, HGTG, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail
***inecomponents.com
600V, SMPS SERIES NCH IGBT W/ ANTI-PARALLEL HYPERFAST DIODE
***ure Electronics
HGTG20N60A4 Series 600 V 70 A Flange Mount SMPS N-Channel IGBT-TO-247
***et
PWR IGBT 45A,600V,SMPS N-CH W/DIODE TO-247
***Components
TRANSISTOR IGBT N-CH 600V 70A TO247
***ark
Pt P To247 45A 600V Smps Rohs Compliant: Yes
***i-Key
IGBT N-CH SMPS 600V 70A TO247
***eco
ADDED FOR DPP(INTERSIL) PKG ID CHANGE<AZ
***Semiconductor
600V, SMPS IGBT
***nell
IGBT, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:70A; Voltage, Vce Sat Max:2.7V; Power Dissipation:290W; Case Style:TO-247; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:280A; Device Marking:HGTG20N60A4D; No. of Pins:3; Power, Pd:290W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:32ns; Time, Fall Typ:32ns; Time, Rise:12ns; Transistors, No. of:1
***rchild Semiconductor
The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372.This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Current Temperature:25°C; Device Marking:HGTG20N60A4D; Fall Time Typ:32ns; Fall Time tf:32ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:290W; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Pulsed Current Icm:280A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Teil # Mfg. Beschreibung Aktie Preis
HGTG20N60A4D
DISTI # V36:1790_06359605		ON SemiconductorPT P TO247 45A 600V SMPS1362
  • 500:$2.4080
  • 250:$2.8710
  • 100:$3.3210
  • 50:$3.6400
  • 25:$3.7750
  • 10:$3.7820
  • 1:$4.3540
HGTG20N60A4D
DISTI # V99:2348_06359605		ON SemiconductorPT P TO247 45A 600V SMPS450
  • 500:$2.4080
  • 250:$2.8710
  • 100:$3.3210
  • 50:$3.6400
  • 25:$3.7750
  • 10:$3.7820
  • 1:$4.3540
HGTG20N60A4D
DISTI # HGTG20N60A4DFS-ND		ON SemiconductorIGBT 600V 70A 290W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		337In Stock
  • 1350:$2.9565
  • 900:$3.4739
  • 450:$3.8520
  • 10:$4.9070
  • 1:$5.4400
HGTG20N60A4D
DISTI # 31882442		ON SemiconductorPT P TO247 45A 600V SMPS5215
  • 4500:$1.8144
  • 450:$1.9104
HGTG20N60A4D
DISTI # 31600626		ON SemiconductorPT P TO247 45A 600V SMPS1362
  • 500:$2.4080
  • 250:$2.8710
  • 100:$3.3210
  • 50:$3.6400
  • 25:$3.7750
  • 10:$3.7820
  • 4:$4.3540
HGTG20N60A4D
DISTI # 31262149		ON SemiconductorPT P TO247 45A 600V SMPS450
  • 500:$2.4080
  • 250:$2.8710
  • 100:$3.3210
  • 50:$3.6400
  • 25:$3.7750
  • 10:$3.7820
  • 3:$4.3540
HGTG20N60A4D
DISTI # HGTG20N60A4D		ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG20N60A4D)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 9000
  • 450:$1.9900
  • 900:$1.9900
  • 1800:$1.9900
  • 2700:$1.9900
  • 4500:$1.8900
HGTG20N60A4D
DISTI # HGTG20N60A4D		ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG20N60A4D)
RoHS: Compliant
Min Qty: 450		Asia - 0
  • 450:$3.1792
  • 900:$3.0569
  • 1350:$2.9437
  • 2250:$2.8386
  • 4500:$2.7407
  • 11250:$2.6493
  • 22500:$2.6059
HGTG20N60A4D
DISTI # HGTG20N60A4D		ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG20N60A4D)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€2.4900
  • 10:€2.2900
  • 25:€2.1900
  • 50:€2.0900
  • 100:€1.9900
  • 500:€1.8900
  • 1000:€1.7900
HGTG20N60A4D
DISTI # 95B2568		ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 95B2568)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1:$5.1800
  • 10:$4.4300
  • 25:$4.2400
  • 50:$4.0500
  • 100:$3.8600
  • 250:$3.6700
HGTG20N60A4D
DISTI # 95B2568		ON SemiconductorSINGLE IGBT, 600V, 70A,DC Collector Current:70A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:290W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes397
  • 250:$3.5400
  • 100:$3.7200
  • 50:$3.9000
  • 25:$4.0900
  • 10:$4.2700
  • 1:$4.9900
HGTG20N60A4D
DISTI # 25M9637		ON SemiconductorIGBT Single Transistor, General Purpose, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 RoHS Compliant: Yes2606
  • 500:$3.0300
  • 250:$3.3800
  • 100:$3.5600
  • 50:$3.7400
  • 25:$3.9300
  • 10:$4.1100
  • 1:$4.8300
HGTG20N60A4D
DISTI # 512-HGTG20N60A4D		ON SemiconductorIGBT Transistors 600V
RoHS: Compliant		779
  • 1:$4.8300
  • 10:$4.1100
  • 100:$3.5600
  • 250:$3.3800
  • 500:$3.0300
HGTG20N60A4D
DISTI # HGTG20N60A4D		ON SemiconductorTransistor: IGBT,600V,40A,190W,TO247-3459
  • 1:$4.0900
  • 5:$3.7900
  • 30:$2.9700
  • 120:$2.5900
HGTG20N60A4D
DISTI # HGTG20N60A4D		ON SemiconductorTransistor: IGBT,600V,40A,190W,TO247-3455
  • 1:$4.0800
  • 5:$3.7900
  • 30:$2.9700
  • 120:$2.5900
HGTG20N60A4DFairchild Semiconductor Corporation 
RoHS: Compliant		Europe - 8
    HGTG20N60A4D
    DISTI # 1057679    		ON SemiconductorIGBT, TO-247
    RoHS: Compliant    		2645
    • 500:$4.9700
    • 250:$5.5400
    • 100:$5.8400
    • 10:$6.7500
    • 1:$7.9300
    HGTG20N60A4D
    DISTI # 1057679    		ON SemiconductorIGBT, TO-247
    RoHS: Compliant    		2631
    • 500:£2.3700
    • 250:£2.6300
    • 100:£2.7700
    • 10:£3.2000
    • 1:£4.1900
    HGTG20N60A4D
    DISTI # XSFP00000149449    		Fairchild Semiconductor Corporation 
    RoHS: Compliant    		390 in Stock0 on Order
    • 390:$4.4500
    • 60:$4.9000
    Bild Teil # Beschreibung
    HGTG20N60A4D

    Mfr.#: HGTG20N60A4D

    OMO.#: OMO-HGTG20N60A4D

    		 IGBT Transistors 600V
    HGTG20N60B3D

    Mfr.#: HGTG20N60B3D

    OMO.#: OMO-HGTG20N60B3D-ON-SEMICONDUCTOR

    		 IGBT 600V 40A 165W TO247
    HGTG20N100D2

    Mfr.#: HGTG20N100D2

    OMO.#: OMO-HGTG20N100D2-1190

    		 Insulated Gate Bipolar Transistor, 34A I(C), 1000V V(BR)CES, N-Channel, TO-247
    HGTG20N120E2

    Mfr.#: HGTG20N120E2

    OMO.#: OMO-HGTG20N120E2-1190

    		 Insulated Gate Bipolar Transistor, 34A I(C), 1200V V(BR)CES, N-Channel, TO-247
    HGTG20N50C1D

    Mfr.#: HGTG20N50C1D

    OMO.#: OMO-HGTG20N50C1D-1190

    		 Insulated Gate Bipolar Transistor, 26A I(C), 500V V(BR)CES, N-Channel, TO-247
    HGTG20N60

    Mfr.#: HGTG20N60

    OMO.#: OMO-HGTG20N60-1190

    		 Neu und Original
    HGTG20N60B3DJ5

    Mfr.#: HGTG20N60B3DJ5

    OMO.#: OMO-HGTG20N60B3DJ5-1190

    		 Neu und Original
    HGTG20N60C3D

    Mfr.#: HGTG20N60C3D

    OMO.#: OMO-HGTG20N60C3D-ON-SEMICONDUCTOR

    		 IGBT 600V 45A 164W TO247
    HGTG20N60C3DR

    Mfr.#: HGTG20N60C3DR

    OMO.#: OMO-HGTG20N60C3DR-1190

    		 Neu und Original
    HGTG20N60A4 20N60A4

    Mfr.#: HGTG20N60A4 20N60A4

    OMO.#: OMO-HGTG20N60A4-20N60A4-1190

    		 Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4000
    Menge eingeben:
    Der aktuelle Preis von HGTG20N60A4D dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,20 $
    2,20 $
    10
    2,09 $
    20,88 $
    100
    1,98 $
    197,83 $
    500
    1,87 $
    934,20 $
    1000
    1,76 $
    1 758,50 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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