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IRLU8113PBF

IRLU8113PBF
Mfr. #:
IRLU8113PBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET MOSFT 30V 94A 6mOhm 22nC Qg Log Lvl
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRLU8113PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLU8113PBF DatasheetIRLU8113PBF Datasheet (P4-P6)IRLU8113PBF Datasheet (P7-P9)IRLU8113PBF Datasheet (P10-P12)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-251-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
94 A
Rds On - Drain-Source-Widerstand:
7.4 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
22 nC
Pd - Verlustleistung:
89 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
6.22 mm
Länge:
6.73 mm
Transistortyp:
1 N-Channel
Breite:
2.38 mm
Marke:
Infineon / IR
Produktart:
MOSFET
Werkspackungsmenge:
75
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001552924
Gewichtseinheit:
0.139332 oz
Tags
IRLU8, IRLU, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, N Ch., 30V, 94A, 6 MOHM, 22 NC QG, I-PAK, Pb-Free
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 30A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N, 30V, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Threshold Voltage Vgs Typ:2.25V; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Package / Case:IPAK; Power Dissipation Pd:89mW; Pulse Current Idm:380A; SMD Marking:89; Termination Type:Through Hole; Transistor Type:Power MOSFET; Turn Off Time:15ns; Turn On Time:9.2ns; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 86A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N-CH 30V 86A IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:75W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:86A; Package / Case:IPAK; Power Dissipation Pd:75W; Power Dissipation Pd:75W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
***ser
MOSFETs 30V,116A,5.1OHM,NCH PWR TRENCH MOSFET
***ter Electronics
30V,116A,5.1 OHM, NCH, IPAK, POWER TRENCH MOSFET
***ical
Trans MOSFET N-CH 30V 18A 3-Pin(3+Tab) IPAK Tube
***r Electronics
Power Field-Effect Transistor, 18A I(D), 30V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ser
MOSFETs- Power and Small Signal NFET 30V 88A 5MOHM
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:88A; On Resistance, Rds(on):5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-IPAK ;RoHS Compliant: Yes
***nell
MOSFET, N, 30V, 3 I-PAK; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:88A; Resistance, Rds On:0.005ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.5V; Case Style:I-PAK; Termination Type:Through Hole; Power, Pd:66W; Voltage, Vds Max:30V
***i-Key
MOSFET N-CH 30V 90A IPAK
***ser
MOSFETs 30V N-Channel PowerTrench SyncFET
***el Nordic
Contact for details
***inecomponents.com
30V N-Channel PowerTrench MOSFET
***et
30V,35A,5.7MO,NCH, IPAK, POWER TRENCH MOSFET
***r Electronics
Power Field-Effect Transistor, 17A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ser
MOSFETs- Power and Small Signal NFET 30V 76A 6MOHM
***r Electronics
Power Field-Effect Transistor, 11A I(D), 30V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***or
MOSFET N-CH 30V 11.3A/79A IPAK
***th Star Micro
Not recommended for new design. Use NTD4906N
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:76A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):6mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:60W ;RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
IRLU8113PBF
DISTI # IRLU8113PBF-ND		Infineon Technologies AGMOSFET N-CH 30V 94A I-PAK
RoHS: Compliant
Min Qty: 900
Container: Tube		Limited Supply - Call
    IRLU8113PBF
    DISTI # 70017972    		Infineon Technologies AGMOSFET,N Ch.,30V,94A,6 MOHM,22 NC QG,I-PAK,Pb-Free
    RoHS: Compliant    		0
    • 1:$0.5600
    IRLU8113PBFInternational Rectifier 
    RoHS: Compliant    		1198
      IRLU8113PBF
      DISTI # 1436999      		Infineon Technologies AG 
      RoHS: Compliant      		0
      • 1000:$2.1100
      • 500:$2.2600
      • 250:$2.5500
      • 100:$2.8600
      • 10:$3.5300
      • 1:$4.2900
      Bild Teil # Beschreibung
      IRLU8743PBF

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      OMO.#: OMO-IRLU8743PBF

      		 MOSFET MOSFT 30V 160A 39nC 3.1mOhm Qg log lvl
      IRLU8113PBF

      Mfr.#: IRLU8113PBF

      OMO.#: OMO-IRLU8113PBF

      		 MOSFET MOSFT 30V 94A 6mOhm 22nC Qg Log Lvl
      IRLU8721-701PBF

      Mfr.#: IRLU8721-701PBF

      OMO.#: OMO-IRLU8721-701PBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 65A I-PAK
      IRLU8729-701PBF

      Mfr.#: IRLU8729-701PBF

      OMO.#: OMO-IRLU8729-701PBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 58A IPAK
      IRLU8203PBF

      Mfr.#: IRLU8203PBF

      OMO.#: OMO-IRLU8203PBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 110A I-PAK
      IRLU8743PBF

      Mfr.#: IRLU8743PBF

      OMO.#: OMO-IRLU8743PBF-INFINEON-TECHNOLOGIES

      		 Darlington Transistors MOSFET MOSFT 30V 160A 39nC 3.1mOhm Qg log lvl
      IRLU8726PBF

      Mfr.#: IRLU8726PBF

      OMO.#: OMO-IRLU8726PBF-INFINEON-TECHNOLOGIES

      		 IGBT Transistors MOSFET MOSFT 85A 5.8mOhm 30V 15nC Qg log lvl
      IRLU8729PBF

      Mfr.#: IRLU8729PBF

      OMO.#: OMO-IRLU8729PBF-126

      		 IGBT Transistors MOSFET MOSFT 58A 8.9mOhm 30V 10nC Qg log lvl
      IRLU8721PBF

      Mfr.#: IRLU8721PBF

      OMO.#: OMO-IRLU8721PBF-126

      		 IGBT Transistors MOSFET MOSFT 30V 65A 8.5nC 8.4mOhm Qg log lvl
      IRLU8256PBF

      Mfr.#: IRLU8256PBF

      OMO.#: OMO-IRLU8256PBF-INFINEON-TECHNOLOGIES

      		 IGBT Transistors MOSFET MOSFT 81A 5.7mOhm 25V 10nC Qg log lvl
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2000
      Menge eingeben:
      Der aktuelle Preis von IRLU8113PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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