IRLU8721PBF

Mfr. #:: IRLU8721PBF
Hersteller:: Infineon Technologies AG
Beschreibung:: IGBT Transistors MOSFET MOSFT 30V 65A 8.5nC 8.4mOhm Qg log lvl
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IRLU8721PBF Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Tags: IRLU8721, IRLU872, IRLU87, IRLU8, IRLU, IRL

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRLU8721PBF Beschreibung

***(Formerly Allied Electronics): MOSFET, N Ch., 30V, 65A, 8.4 MOHM, 8.5 NC QG, I-PAK, Pb-Free

***ark: ; Transistor Type:MOSFET; Continuous Drain Current, Id:65A; On Resistance, Rds(on):0.0084ohm; Current, Idm pulse:260A; Drain-Source Breakdown Voltage:30V; No. of Pins:3 ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N I-PAK 30V; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:30V; On Resistance Rds(on):8.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:65W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Avalanche Single Pulse Energy Eas:93mJ; Capacitance Ciss Typ:1030pF; Current Id Max:65A; Full Power Rating Temperature:25°C; N-channel Gate Charge:8.5nC; Package / Case:IPAK; Pin Configuration:G(1), D(2), S(3); Power Dissipation Pd:65W; Power Dissipation Pd:65W; Pulse Current Idm:260A; Repetitive Avalanche Energy Max:6.5mJ; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V; Voltage Vgs th Min:1.35V

***ser: MOSFETs 30V,73A,8.2 OHM,NCH PWR TRENCH MOSFET

***i-Key Marketplace: MOSFET N-CH 30V 15A/73A IPAK

***r Electronics: Power Field-Effect Transistor, 15A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***et: N-Channel PowerTrench MOSFET

***-Wing Technology: N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

***icroelectronics: N-channel 30 V, 0.0042 Ohm, 75 A, IPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET

***r Electronics: Power Field-Effect Transistor, 75A I(D), 30V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***ark: MOSFET, N CH, 30V, 75A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:75A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; MSL:- RoHS Compliant: Yes

***nell: MOSFET, N CH, 30V, 75A, IPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0046ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 60W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C

***ical: Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-251 Tube

***ment14 APAC: MOSFET, N CH, 50A, 30V, PG-TO251-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:56W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:56W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO251-3, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ical: Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-251 Tube

***ment14 APAC: MOSFET, N CH, 50A, 30V, PG-TO251-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:47W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:47W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***emi: Power MOSFET 30V 55A 8 mohm Single N Channel DPAK

***et: Trans MOSFET N-CH 30V 11.1A 3-Pin(3+Tab) IPAK Rail

***r Electronics: Power Field-Effect Transistor, 8.9A I(D), 30V, 0.0127ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ser: MOSFETs- Power and Small Signal NFET 30V 76A 6MOHM

***r Electronics: Power Field-Effect Transistor, 11A I(D), 30V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***Yang: NFET DPAK 30V 76A 6MOHM - Rail/Tube

***or: MOSFET N-CH 30V 11.3A/79A IPAK

***th Star Micro: Not recommended for new design. Use NTD4906N

***ark: Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:76A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):6mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:60W ;RoHS Compliant: Yes

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IRLU8721-701PBF DISTI # IRLU8721-701PBF-ND	Infineon Technologies AG	MOSFET N-CH 30V 65A I-PAK RoHS: Compliant Min Qty: 1350 Container: Tube	Limited Supply - Call
IRLU8721PBF DISTI # 70018008	Infineon Technologies AG	MOSFET,N Ch.,30V,65A,8.4 MOHM,8.5 NC QG,I-PAK,Pb-Free RoHS: Compliant	0	1350:$1.2700 2700:$1.2450 6750:$1.2070 13500:$1.1560 33750:$1.0800
IRLU8721PBF DISTI # 942-IRLU8721PBF	Infineon Technologies AG	MOSFET MOSFT 30V 65A 8.5nC 8.4mOhm Qg log lvl RoHS: Compliant	3	1:$1.2700 10:$0.5620 100:$0.4300 1000:$0.4070 2500:$0.3650 10000:$0.3500
IRLU8721PBF DISTI # 1551913	Infineon Technologies AG	RoHS: Compliant	0	1:$2.0100 10:$0.8900 100:$0.6810 1000:$0.6440 2500:$0.6110

Verwandte Produkte

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	Mfr.#: IRLU8721 OMO.#: OMO-IRLU8721-1190	Neu und Original
	Mfr.#: IRLU8726 OMO.#: OMO-IRLU8726-1190	Neu und Original
	Mfr.#: IRLU8729-701PBF OMO.#: OMO-IRLU8729-701PBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 58A IPAK
	Mfr.#: IRLU8203PBF OMO.#: OMO-IRLU8203PBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 110A I-PAK
	Mfr.#: IRLU8726PBF OMO.#: OMO-IRLU8726PBF-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET MOSFT 85A 5.8mOhm 30V 15nC Qg log lvl
	Mfr.#: IRLU8729PBF OMO.#: OMO-IRLU8729PBF-126	IGBT Transistors MOSFET MOSFT 58A 8.9mOhm 30V 10nC Qg log lvl
	Mfr.#: IRLU8721PBF OMO.#: OMO-IRLU8721PBF-126	IGBT Transistors MOSFET MOSFT 30V 65A 8.5nC 8.4mOhm Qg log lvl

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1000
Menge eingeben:

Der aktuelle Preis von IRLU8721PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,52 $~~; ~~0,52 $~~

10: ~~0,50 $~~; ~~4,99 $~~

100: ~~0,47 $~~; ~~47,25 $~~

500: ~~0,45 $~~; ~~223,15 $~~

1000: ~~0,42 $~~; ~~420,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

IRLU8721 3
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IRLU8721PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes