FS50R06YL4

FS50R06YL4
Mfr. #:
FS50R06YL4
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Modules N-CH 600V 55A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FS50R06YL4 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Module
Produkt:
IGBT Silizium Module
Aufbau:
Verhexen
Kollektor- Emitterspannung VCEO Max:
600 V
Kontinuierlicher Kollektorstrom bei 25 C:
55 A
Paket / Koffer:
EASY2
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 125 C
Verpackung:
Tablett
Höhe:
17 mm
Länge:
55.9 mm
Breite:
45.6 mm
Marke:
Infineon-Technologien
Montageart:
Chassishalterung
Maximale Gate-Emitter-Spannung:
20 V
Produktart:
IGBT-Module
Werkspackungsmenge:
20
Unterkategorie:
IGBTs
Teil # Aliase:
FS50R06YL4BOMA1 SP000100285
Tags
FS50R06Y, FS50R06, FS50R0, FS50R, FS50, FS5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    I***v
    I***v
    RU

    Corresponds to the description i recommend the seller 2018-11-09 ordered a came 2019-01-08

    2019-01-08
    A***o
    A***o
    RU

    Wavgat board, atmega 168 chip.

    2019-04-06
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IGBT MODULE, 1.2KV, 55A, SIX PACK;
***S
French Electronic Distributor since 1988
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EconoPACK 2 1200V sixpack IGBT module with fast Trench/Fieldstop IGBT3, Emitter Controlled HE diode and NTC | Summary of Features: High power density; Established Econo module concept; Integrated temperature sensor available; Low stray inductance module design; RoHS-compliant modules | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; induction; aircon
*** Stop Electro
Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel
***el Electronic
Trans IGBT Module N-CH 1.2KV 55A 32-Pin Case SP-3
***rochip SCT
High Voltage Power Module, Full bridge, 1200V, RoHS
***ark
PM-IGBT-TFS-SP3F SP3F Tube RoHS Compliant: Yes
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IGBT MOD TRENCH FULL BRIDGE SP3
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Trans IGBT Module N=-CH 1200V 45A 205000mW 18-Pin EASY1B Tray
***nell
IGBT, LOW POW, 1200V, 25A, EASYPACK; Transistor Polarity: N Channel; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 205W; Collector Emitter Voltage V(br)ceo: 1.2kV; Trans
***ark
Igbt Module; Continuous Collector Current:25A; Collector Emitter Saturation Voltage:2.15V; Power Dissipation:205W; Operating Temperature Max:150°C; Igbt Termination:press Fit; Collector Emitter Voltage Max:1.2Kv; Product Range:- Rohs Compliant: Yes
***ineon
EasyPACK 1B 1200V sixpack IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and NTC. | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Restistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon; ups
***ource
EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC
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IGBT, LOW POWER, 600V, 50A, EASYPACK; Module Configuration:Six; Transistor Polarity:N Channel; DC Collector Current:50A; Collector Emitter Voltage Vces:1.45V; Power Dissipation Pd:205W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:18; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:205W
***ineon
EasyPACK 1B 600V sixpack IGBT module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and NTC. | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Restistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; solar; ups; majorhomeapplicances
Teil # Mfg. Beschreibung Aktie Preis
FS50R06YL4BOMA1
DISTI # FS50R06YL4BOMA1-ND
Infineon Technologies AGMOD IGBT LOW PWR EASY2-1
RoHS: Compliant
Min Qty: 20
Container: Tray
Limited Supply - Call
  • 20:$62.0275
FS50R06YL4
DISTI # FS50R06YL4
Infineon Technologies AGTrans IGBT Module N-CH 600V 55A 18-Pin EASY2 (Alt: FS50R06YL4)
RoHS: Compliant
Min Qty: 20
Asia - 0
  • 20:$54.4457
  • 40:$52.9333
  • 60:$51.5027
  • 100:$50.1474
  • 200:$49.4961
  • 500:$48.8615
  • 1000:$48.2430
FS50R06YL4BOMA1
DISTI # FS50R06YL4BOMA1
Infineon Technologies AGLOW POWER EASY - Trays (Alt: FS50R06YL4BOMA1)
RoHS: Compliant
Min Qty: 20
Container: Tray
Americas - 0
  • 20:$54.8900
  • 40:$52.8900
  • 80:$50.9900
  • 120:$49.2900
  • 200:$48.3900
FS50R06YL4
DISTI # 641-FS50R06YL4X
Infineon Technologies AGIGBT Modules N-CH 600V 55A0
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5500
    Menge eingeben:
    Der aktuelle Preis von FS50R06YL4 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    62,88 $
    62,88 $
    5
    61,47 $
    307,35 $
    10
    59,07 $
    590,70 $
    25
    57,17 $
    1 429,25 $
    50
    57,16 $
    2 858,00 $
    100
    52,97 $
    5 297,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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