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FS50R12W2T4_B11

FS50R12W2T4_B11
Mfr. #:
FS50R12W2T4_B11
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Modules IGBT 1200V 50A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FS50R12W2T4_B11 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Module
Produkt:
IGBT Silizium Module
Kollektor- Emitterspannung VCEO Max:
1200 V
Kollektor-Emitter-Sättigungsspannung:
2.15 V
Kontinuierlicher Kollektorstrom bei 25 C:
83 A
Gate-Emitter-Leckstrom:
100 nA
Pd - Verlustleistung:
335 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Tablett
Marke:
Infineon-Technologien
Montageart:
Chassishalterung
Maximale Gate-Emitter-Spannung:
20 V
Produktart:
IGBT-Module
Werkspackungsmenge:
15
Unterkategorie:
IGBTs
Teil # Aliase:
FS50R12W2T4B11BOMA1 SP000546148
Gewichtseinheit:
1.375685 oz
Tags
FS50R12W, FS50R12, FS50R1, FS50R, FS50, FS5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans IGBT Module N-CH 1.2KV 83A 21-pin EASY2B-2
***ark
Igbt Module; Transistor Polarity:n Channel; Dc Collector Current:50A; Collector Emitter Saturation Voltage Vce(On):1.2Kv; Power Dissipation Pd:335W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; No. Of Pins:18Pins; Product Range:- Rohs Compliant: Yes
***ineon
EasyPACK 2B 1200 V / 50 A sixpack IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology | Summary of Features: Low Switching Losses; Trench IGBT 4; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Resistance; Compact Design; PressFIT Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon; ups
Teil # Mfg. Beschreibung Aktie Preis
FS50R12W2T4B11BOMA1
DISTI # FS50R12W2T4B11BOMA1-ND		Infineon Technologies AGMOD IGBT LOW PWR EASY2B-2
RoHS: Compliant
Min Qty: 15
Container: Tray		Temporarily Out of Stock
  • 15:$49.0293
FS50R12W2T4_B11
DISTI # SP000546148		Infineon Technologies AGTrans IGBT Module N-CH 1.2KV 83A 21-pin EASY2B-2 (Alt: SP000546148)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€37.2900
  • 500:€38.1900
  • 100:€39.2900
  • 50:€40.5900
  • 25:€42.0900
  • 10:€46.2900
  • 1:€57.2900
FS50R12W2T4_B11
DISTI # SP000546148		Infineon Technologies AGTrans IGBT Module N-CH 1.2KV 83A 21-pin EASY2B-2 (Alt: SP000546148)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€35.7900
  • 500:€38.3900
  • 100:€39.7900
  • 50:€41.2900
  • 25:€42.9900
  • 10:€44.7900
  • 1:€48.7900
FS50R12W2T4B11BOMA1
DISTI # FS50R12W2T4B11BOMA1		Infineon Technologies AGLOW POWER EASY - Trays (Alt: FS50R12W2T4B11BOMA1)
RoHS: Compliant
Min Qty: 15
Container: Tray		Americas - 0
  • 150:$38.0900
  • 90:$38.9900
  • 60:$39.9900
  • 30:$40.9900
  • 15:$41.5900
FS50R12W2T4B11BOMA1
DISTI # FS50R12W2T4B11BOMA1		Infineon Technologies AGLOW POWER EASY - Bulk (Alt: FS50R12W2T4B11BOMA1)
RoHS: Compliant
Min Qty: 9
Container: Bulk		Americas - 0
  • 90:$37.4900
  • 45:$38.0900
  • 27:$39.4900
  • 18:$40.9900
  • 9:$42.4900
FS50R12W2T4_B11
DISTI # 84R7223		Infineon Technologies AGIGBT Module,Transistor Polarity:N Channel,DC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:335W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:18Pins,Product Range:- RoHS Compliant: Yes0
    FS50R12W2T4_B11
    DISTI # 641-FS50R12W2T4_B11    		Infineon Technologies AGIGBT Modules IGBT 1200V 50A1
    • 1:$52.1900
    • 5:$51.0200
    • 10:$49.0200
    • 25:$47.4500
    • 50:$47.4400
    • 100:$43.9700
    FS50R12W2T4B11BOMA1Infineon Technologies AG 
    RoHS: Not Compliant    		5
    • 1000:$38.8400
    • 500:$40.8900
    • 100:$42.5700
    • 25:$44.3900
    • 1:$47.8100
    FS50R12W2T4_B11
    DISTI # 1833612    		Infineon Technologies AGIGBT, L POWER, 1200V, 50A, EASYPACK
    RoHS: Compliant    		0
    • 250:$65.6400
    • 100:$67.5900
    • 50:$72.9200
    • 25:$72.9500
    • 10:$75.3500
    • 5:$78.4300
    • 1:$80.2300
    FS50R12W2T4_B11
    DISTI # 1833612    		Infineon Technologies AGIGBT, L POWER, 1200V, 50A, EASYPACK
    RoHS: Compliant    		0
    • 50:£33.2300
    • 10:£36.9300
    • 5:£39.7100
    • 1:£40.6200
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    Verfügbarkeit
    Aktie:
    16
    Auf Bestellung:
    1999
    Menge eingeben:
    Der aktuelle Preis von FS50R12W2T4_B11 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    52,19 $
    52,19 $
    5
    51,02 $
    255,10 $
    10
    49,02 $
    490,20 $
    25
    47,45 $
    1 186,25 $
    50
    47,44 $
    2 372,00 $
    100
    43,97 $
    4 397,00 $
    250
    42,70 $
    10 675,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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