 |  | | |
| PartNumber | FS50R12W2T4 | FS50R12W2T4BOMA1 | FS50R12W2T4B11BOMA1 |
| Description | IGBT Modules IGBT 1200V 50A | MOD IGBT LOW PWR EASY2B-1 | MOD IGBT LOW PWR EASY2B-2 |
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| RoHS | Y | - | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | IGBT-Inverter | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 1.85 V | - | - |
| Continuous Collector Current at 25 C | 83 A | - | - |
| Gate Emitter Leakage Current | 100 nA | - | - |
| Pd Power Dissipation | 335 W | - | - |
| Package / Case | Module | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tray | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | SMD/SMT | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 15 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | FS50R12W2T4BOMA1 SP000404114 | - | - |
| Unit Weight | 1.375685 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
FS50R12W2T4_B11 | IGBT Modules IGBT 1200V 50A | |
| FS50R12W2T4 | IGBT Modules IGBT 1200V 50A | ||
| FS50R12W2T4BOMA1 | MOD IGBT LOW PWR EASY2B-1 | ||
| FS50R12W2T4B11BOMA1 | MOD IGBT LOW PWR EASY2B-2 | ||
| FS50R12W2T4-B11 | Neu und Original | ||
| FS50R12W2T4_B11 | IGBT Modules IGBT 1200V 50A | ||
| FS50R12W2T4 | IGBT Modules IGBT 1200V 50A |