IRLU3114ZPBF

IRLU3114ZPBF
Mfr. #:
IRLU3114ZPBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET MOSFT 40V 130A 4.9mOhm 40nC Log Lvl
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRLU3114ZPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLU3114ZPBF DatasheetIRLU3114ZPBF Datasheet (P4-P6)IRLU3114ZPBF Datasheet (P7-P9)IRLU3114ZPBF Datasheet (P10-P11)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-251-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
130 A
Rds On - Drain-Source-Widerstand:
6.5 mOhms
Vgs - Gate-Source-Spannung:
16 V
Qg - Gate-Ladung:
40 nC
Pd - Verlustleistung:
140 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
6.22 mm
Länge:
6.73 mm
Transistortyp:
1 N-Channel
Breite:
2.38 mm
Marke:
Infineon / IR
Produktart:
MOSFET
Werkspackungsmenge:
75
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001567310
Gewichtseinheit:
0.139332 oz
Tags
IRLU311, IRLU31, IRLU3, IRLU, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, N Ch., Automotive, 40V, 130A, 4.9 MOHM, 40 NC QG, I-PAK, Pb-Free
***ernational Rectifier
40V Single N-Channel HEXFET Power MOSFET in a I-Pak package
***et Europe
Trans MOSFET N-CH 40V 130A 3-Pin(3+Tab) IPAK
***ment14 APAC
MOSFET, N-CH, 40V, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3.9mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:3810pF; Current Id Max:42A; Package / Case:IPAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:500A; Reverse Recovery Time trr Typ:30ns; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:16V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V
Teil # Mfg. Beschreibung Aktie Preis
IRLU3114ZPBF
DISTI # IRLU3114ZPBF-ND
Infineon Technologies AGMOSFET N-CH 40V 42A I-PAK
RoHS: Compliant
Min Qty: 525
Container: Tube
Limited Supply - Call
    IRLU3114ZPBF
    DISTI # 70017961
    Infineon Technologies AGMOSFET,N Ch.,Automotive,40V,130A,4.9 MOHM,40 NC QG,I-PAK,Pb-Free
    RoHS: Compliant
    0
    • 525:$1.9200
    • 1050:$1.8820
    • 2625:$1.8240
    • 5250:$1.7470
    • 13125:$1.6320
    IRLU3114ZPBF
    DISTI # 942-IRLU3114ZPBF
    Infineon Technologies AGMOSFET MOSFT 40V 130A 4.9mOhm 40nC Log Lvl
    RoHS: Compliant
    0
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1500
      Menge eingeben:
      Der aktuelle Preis von IRLU3114ZPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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