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C2M0080120D

C2M0080120D
Mfr. #:
C2M0080120D
Hersteller:
N/A
Beschreibung:
MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
C2M0080120D Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
C2M0080120D Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Cree, Inc.
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
SiC
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
1.2 kV
Id - Kontinuierlicher Drainstrom:
31.6 A
Rds On - Drain-Source-Widerstand:
80 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.1 V
Vgs - Gate-Source-Spannung:
25 V, - 5 V
Qg - Gate-Ladung:
94 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
208 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
21.1 mm
Länge:
16.13 mm
Produkt:
Leistungs-MOSFET
Transistortyp:
1 N-Channel
Typ:
Siliziumkarbid-Leistungs-MOSFET
Breite:
5.21 mm
Marke:
Wolfspeed / Cree
Vorwärtstranskonduktanz - Min:
3.9 S
Abfallzeit:
21 ns
Produktart:
MOSFET
Anstiegszeit:
34 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
23.2 ns
Typische Einschaltverzögerungszeit:
12 ns
Gewichtseinheit:
1.340411 oz
Tags
C2M0080120D, C2M008012, C2M008, C2M00, C2M0, C2M
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, SiC N-Channel MOSFET, 31 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0080120D
***ical
Trans MOSFET N-CH Si 1.2KV 36A 3-Pin(3+Tab) TO-247
***ment14 APAC
场效应管, MOSFET, N沟道, 1200V, 31.6A, SIC, TO247;
***i-Key
MOSFET N-CH 1200V 31.6A TO247
***hardson RFPD
SILICON CARBIDE MOSFETS
***ark
Mosfet, N Channel, 1200V, 31.6A, Sic, To247; Transistor Polarity:n Channel; Continuous Drain Current Id:31.6A; Drain Source Voltage Vds:1.2Kv; On Resistance Rds(On):0.08Ohm; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:3.2V Rohs Compliant: Yes
***nell
MOSFET, CAN N, 1200V, 31.6A, SIC, TO247; Polarità Transistor:Canale N; Corrente Continua di Drain Id:31.6A; Tensione Drain Source Vds:1.2kV; Resistenza di Attivazione Rds(on):0.08ohm; Tensione Vgs di Misura Rds(on):20V; Tensione di Soglia Vgs:3.2V; Dissipazione di Potenza Pd:208W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Temperatura di Esercizio Min:-55°C
Wolfspeed C2M™ SiC Power MOSFETs
Wolfspeed C2M family of Silicon Carbide Power MOSFETs provide engineers a wide range of 1200V and 1700V SiC MOSFETs. Wolfspeed SiC MOSFETs enable engineers to replace silicon transistors (IGBTs) and develop high-voltage circuits with extremely fast switching speeds and ultra-low switching losses. Used in conjunction with Wolfspeed SiC Schottky diodes in an all-SiC system, the C2M SiC MOSFET allows design engineers to achieve levels of energy efficiency, size, and weight reduction that are not possible with available silicon power devices of comparable ratings. The new C2M family of MOSFETs is based on a rugged and reliable Gen2 SiC technology platform, providing the lowest switching losses in their class. The C2M significantly higher switching frequencies, all at lower cost. This revolutionary series also reduces the size of magnetics and filter components and significantly reduces cooling requirements.Learn more
Teil # Mfg. Beschreibung Aktie Preis
C2M0080120D
DISTI # V36:1790_06265417		Cree, Inc.Trans MOSFET N-CH Si 1.2KV 36A 3-Pin(3+Tab) TO-247
RoHS: Compliant		2634
  • 100:$15.8600
  • 1:$16.6400
C2M0080120D
DISTI # V99:2348_06265417		Cree, Inc.Trans MOSFET N-CH Si 1.2KV 36A 3-Pin(3+Tab) TO-247
RoHS: Compliant		223
  • 1:$19.1610
C2M0080120D
DISTI # C2M0080120D-ND		WolfspeedMOSFET N-CH 1200V 31.6A TO247
RoHS: Compliant
Min Qty: 1
Container: Bulk		15405In Stock
  • 100:$16.6250
  • 1:$16.6700
C2M0080120D
DISTI # 32726376		Cree, Inc.Trans MOSFET N-CH Si 1.2KV 36A 3-Pin(3+Tab) TO-247
RoHS: Compliant		25356
  • 3:$20.8500
C2M0080120D
DISTI # 32726368		Cree, Inc.Trans MOSFET N-CH Si 1.2KV 36A 3-Pin(3+Tab) TO-247
RoHS: Compliant		11997
  • 3:$20.8500
C2M0080120D
DISTI # 19915997		Cree, Inc.Trans MOSFET N-CH Si 1.2KV 36A 3-Pin(3+Tab) TO-247
RoHS: Compliant		8400
  • 600:$17.4298
C2M0080120D
DISTI # 32632253		Cree, Inc.Trans MOSFET N-CH Si 1.2KV 36A 3-Pin(3+Tab) TO-247
RoHS: Compliant		2634
  • 1:$16.6400
C2M0080120D
DISTI # 31335131		Cree, Inc.Trans MOSFET N-CH Si 1.2KV 36A 3-Pin(3+Tab) TO-247
RoHS: Compliant		223
  • 1:$19.1610
C2M0080120D
DISTI # 12X8365		WolfspeedPower MOSFET, N Channel, 31.6 A, 1.2 kV, 0.08 ohm, 20 V, 3.2 V RoHS Compliant: Yes4111
  • 100:$17.8100
  • 50:$17.9500
  • 25:$18.1000
  • 10:$18.2400
  • 5:$18.6300
  • 1:$19.3400
C2M0080120D
DISTI # 67W3046		WolfspeedMOSFET, N CHANNEL, 1200V, 31.6A, SIC, TO247,Transistor Polarity:N Channel,Continuous Drain Current Id:31.6A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.08ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3.2V RoHS Compliant: Yes436
  • 100:$17.8100
  • 50:$17.9500
  • 25:$18.1000
  • 10:$18.2400
  • 5:$18.6300
  • 1:$19.3400
C2M0080120D
DISTI # 941-C2M0080120D		Cree, Inc.MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT
RoHS: Compliant		6117
  • 1:$16.6700
  • 100:$16.0300
  • 500:$15.2400
C2M0080120D
DISTI # 8098991		Cree, Inc.CREE MOSFET C2M0080120D, EA288
  • 15:£14.2700
  • 6:£14.6600
  • 1:£15.2900
C2M0080120D
DISTI # 8098991P		Cree, Inc.CREE MOSFET C2M0080120D, TU2620
  • 15:£14.2700
  • 6:£14.6600
C2M0080120D
DISTI # 9199749		Cree, Inc.CREE MOSFET C2M0080120D, TU120
  • 30:£15.1920
C2M0080120D
DISTI # C2M0080120D		WolfspeedTransistor: N-MOSFET,SiC,unipolar,1.2kV,36A,208W,TO247-3,32ns17
  • 30:$21.6000
  • 10:$23.2000
  • 3:$26.7000
  • 1:$30.2000
C2M0080120D
DISTI # C2M0080120D		WolfspeedSILICON CARBIDE MOSFETS
RoHS: Compliant		37353
  • 1:$19.2300
  • 11:$18.6600
  • 51:$17.8600
C2M0080120D
DISTI # 2361496		WolfspeedMOSFET, N-CH, 1200V, 31.6A, SIC, TO247
RoHS: Compliant		4498
  • 100:£13.0300
  • 50:£13.1400
  • 10:£13.2500
  • 5:£13.3600
  • 1:£13.6600
C2M0080120D
DISTI # 2361496		WolfspeedMOSFET, N-CH, 1200V, 31.6A, SIC, TO247
RoHS: Compliant		4970
  • 1:$27.8200
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Mfr.#: C2M0160120D

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Mfr.#: C4D20120D

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LSIC1MO120E0080

Mfr.#: LSIC1MO120E0080

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TYN625RG

Mfr.#: TYN625RG

OMO.#: OMO-TYN625RG-STMICROELECTRONICS

 SCR 25A 40MA 600V TO-220-3AB
IXDN609SI

Mfr.#: IXDN609SI

OMO.#: OMO-IXDN609SI-IXYS-INTEGRATED-CIRCUITS-DIVIS

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MGJ2D051505SC

Mfr.#: MGJ2D051505SC

OMO.#: OMO-MGJ2D051505SC-MURATA-POWER-SOLUTIONS

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1988
Menge eingeben:
Der aktuelle Preis von C2M0080120D dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
16,67 $
16,67 $
100
16,03 $
1 603,00 $
500
15,24 $
7 620,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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