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IRFH5207TR2PBF

IRFH5207TR2PBF
Mfr. #:
IRFH5207TR2PBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET MOSFT 75V Gen 10.7 10.11mOhm 43.5nC Qg
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFH5207TR2PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PQFN-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
75 V
Id - Kontinuierlicher Drainstrom:
13 A
Rds On - Drain-Source-Widerstand:
9.6 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
39 nC
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
3.6 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
0.83 mm
Länge:
6 mm
Transistortyp:
1 N-Channel
Breite:
5 mm
Marke:
Infineon / IR
Vorwärtstranskonduktanz - Min:
51 S
Abfallzeit:
7.1 ns
Produktart:
MOSFET
Anstiegszeit:
12 ns
Werkspackungsmenge:
400
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001564184
Tags
IRFH5207, IRFH520, IRFH52, IRFH5, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
75V Single N-Channel HEXFET Power MOSFET in a PQFN package
***et
Trans MOSFET N-CH 75V 13A 8-Pin QFN T/R
***(Formerly Allied Electronics)
MOSFET 75V, Gen 10.7, 10.11 mOhm max, 43.5 nC Qg
***trelec
MOSFET PQFN-8 (5x6) N 75V 13 A
***ment14 APAC
MOSFET,N CH,75V,71A,PQFN56; Transistor Polarity:N Channel; Drain Source Voltage Vds:75V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:71A; Power Dissipation Pd:3.6W; Voltage Vgs Max:20V
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ark
T&R / MOSFET, 75V, 75A, 8.5 mOhm, 48 nC Qg, PQFN 5x6
***et
Trans MOSFET N-CH 75V 14A 8-Pin PQFN T/R
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***trelec
MOSFET Operating temperature: -55...+150 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 100 W
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:89A; Drain Source Voltage Vds:60V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes
***ernational Rectifier
60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
***(Formerly Allied Electronics)
MOSFET, 60V, 87A, 7mOhm, 40 nC Qg, PQFN5x6
***ical
Trans MOSFET N-CH 60V 16A 8-Pin QFN T/R
***trelec
MOSFET PQFN-8 (5x6) N 60V 16 A
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT
***ment14 APAC
MOSFET,N CH,60V,16A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:60V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:100W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:89A; Power Dissipation Pd:100W; Voltage Vgs Max:20V
Teil # Mfg. Beschreibung Aktie Preis
IRFH5207TR2PBF
DISTI # IRFH5207TR2PBFCT-ND		Infineon Technologies AGMOSFET N-CH 75V 5X6 PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    IRFH5207TR2PBF
    DISTI # IRFH5207TR2PBFDKR-ND    		Infineon Technologies AGMOSFET N-CH 75V 5X6 PQFN
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      IRFH5207TR2PBF
      DISTI # 70019275      		Infineon Technologies AGMOSFET 75V,Gen 10.7,10.11 mOhm max,43.5 nC Qg
      RoHS: Compliant      		0
      • 1:$1.3000
      • 2:$1.2740
      • 5:$1.2350
      • 10:$1.1830
      • 25:$1.1050
      IRFH5207TR2PBF
      DISTI # 942-IRFH5207TR2PBF      		Infineon Technologies AGMOSFET MOSFT 75V Gen 10.7 10.11mOhm 43.5nC Qg
      RoHS: Compliant      		0
        Bild Teil # Beschreibung
        IRFH5207TR2PBF

        Mfr.#: IRFH5207TR2PBF

        OMO.#: OMO-IRFH5207TR2PBF

        		 MOSFET MOSFT 75V Gen 10.7 10.11mOhm 43.5nC Qg
        IRFH5206TR2PBF

        Mfr.#: IRFH5206TR2PBF

        OMO.#: OMO-IRFH5206TR2PBF

        		 MOSFET MOSFT 60V 87A 7mOhm 40nC Qg
        IRFH5204TR2PBF

        Mfr.#: IRFH5204TR2PBF

        OMO.#: OMO-IRFH5204TR2PBF

        		 MOSFET MOSFT 40V 100A 4.3mOhm 42nC Qg
        IRFH5206TR2PBF

        Mfr.#: IRFH5206TR2PBF

        OMO.#: OMO-IRFH5206TR2PBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 60V 16A 5X6 PQFN
        IRFH5207TR2PBF

        Mfr.#: IRFH5207TR2PBF

        OMO.#: OMO-IRFH5207TR2PBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 75V 5X6 PQFN
        IRFH5204TR2PBF

        Mfr.#: IRFH5204TR2PBF

        OMO.#: OMO-IRFH5204TR2PBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 40V 22A PQFN
        IRFH5206TRPBF

        Mfr.#: IRFH5206TRPBF

        OMO.#: OMO-IRFH5206TRPBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 60V 16A 8-PQFN
        IRFH5206TRPBF.

        Mfr.#: IRFH5206TRPBF.

        OMO.#: OMO-IRFH5206TRPBF--1190

        		 Neu und Original
        IRFH5207TRPBF

        Mfr.#: IRFH5207TRPBF

        OMO.#: OMO-IRFH5207TRPBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 75V 13A 8-PQFN
        IRFH5207TRPBF.

        Mfr.#: IRFH5207TRPBF.

        OMO.#: OMO-IRFH5207TRPBF--1190

        		 Neu und Original
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        4000
        Menge eingeben:
        Der aktuelle Preis von IRFH5207TR2PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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