PartNumber | IRFH5207TR2PBF | IRFH5207TRPBF | IRFH5207TRPBF. |
Description | MOSFET MOSFT 75V Gen 10.7 10.11mOhm 43.5nC Qg | MOSFET N-CH 75V 13A 8-PQFN | |
Manufacturer | Infineon | IR | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PQFN-8 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 75 V | - | - |
Id Continuous Drain Current | 13 A | - | - |
Rds On Drain Source Resistance | 9.6 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 39 nC | - | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 3.6 W | - | - |
Configuration | Single | Single Quad Drain Triple Source | - |
Packaging | Reel | Reel | - |
Height | 0.83 mm | - | - |
Length | 6 mm | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 5 mm | - | - |
Brand | Infineon / IR | - | - |
Forward Transconductance Min | 51 S | - | - |
Fall Time | 7.1 ns | 7.1 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 12 ns | 12 ns | - |
Factory Pack Quantity | 400 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | SP001564184 | - | - |
Package Case | - | PQFN-8 | - |
Pd Power Dissipation | - | 3.6 W | - |
Minimum Operating Temperature | - | - 55 C | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 71 A | - |
Vds Drain Source Breakdown Voltage | - | 75 V | - |
Vgs th Gate Source Threshold Voltage | - | 4 V | - |
Rds On Drain Source Resistance | - | 9.6 mOhms | - |
Typical Turn Off Delay Time | - | 20 ns | - |
Typical Turn On Delay Time | - | 7.2 ns | - |
Qg Gate Charge | - | 40 nC | - |
Forward Transconductance Min | - | 51 S | - |
Channel Mode | - | Enhancement | - |