IRFH5207

IRFH5207TR2PBF vs IRFH5207TRPBF vs IRFH5207TRPBF.

 
PartNumberIRFH5207TR2PBFIRFH5207TRPBFIRFH5207TRPBF.
DescriptionMOSFET MOSFT 75V Gen 10.7 10.11mOhm 43.5nC QgMOSFET N-CH 75V 13A 8-PQFN
ManufacturerInfineonIR-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePQFN-8--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage75 V--
Id Continuous Drain Current13 A--
Rds On Drain Source Resistance9.6 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge39 nC--
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation3.6 W--
ConfigurationSingleSingle Quad Drain Triple Source-
PackagingReelReel-
Height0.83 mm--
Length6 mm--
Transistor Type1 N-Channel1 N-Channel-
Width5 mm--
BrandInfineon / IR--
Forward Transconductance Min51 S--
Fall Time7.1 ns7.1 ns-
Product TypeMOSFET--
Rise Time12 ns12 ns-
Factory Pack Quantity400--
SubcategoryMOSFETs--
Part # AliasesSP001564184--
Package Case-PQFN-8-
Pd Power Dissipation-3.6 W-
Minimum Operating Temperature-- 55 C-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-71 A-
Vds Drain Source Breakdown Voltage-75 V-
Vgs th Gate Source Threshold Voltage-4 V-
Rds On Drain Source Resistance-9.6 mOhms-
Typical Turn Off Delay Time-20 ns-
Typical Turn On Delay Time-7.2 ns-
Qg Gate Charge-40 nC-
Forward Transconductance Min-51 S-
Channel Mode-Enhancement-
Hersteller Teil # Beschreibung RFQ
Infineon / IR
Infineon / IR
IRFH5207TR2PBF MOSFET MOSFT 75V Gen 10.7 10.11mOhm 43.5nC Qg
Infineon Technologies
Infineon Technologies
IRFH5207TR2PBF MOSFET N-CH 75V 5X6 PQFN
IRFH5207TRPBF MOSFET N-CH 75V 13A 8-PQFN
IRFH5207TRPBF. Neu und Original
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