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IPS65R950C6AKMA1

IPS65R950C6AKMA1
Mfr. #:
IPS65R950C6AKMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 700V 4.5A IPAK-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPS65R950C6AKMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-251-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
4.5 A
Rds On - Drain-Source-Widerstand:
855 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
15.3 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
37 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Rohr
Höhe:
6.22 mm
Länge:
6.73 mm
Serie:
CoolMOS C6
Transistortyp:
1 N-Channel
Breite:
2.38 mm
Marke:
Infineon-Technologien
Abfallzeit:
13.6 ns
Produktart:
MOSFET
Anstiegszeit:
5.2 ns
Werkspackungsmenge:
1500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
41 ns
Typische Einschaltverzögerungszeit:
6.6 ns
Teil # Aliase:
IPS65R950C6AKMA1 SP000991122
Gewichtseinheit:
0.012102 oz
Tags
IPS65R, IPS65, IPS6, IPS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 700V 4.5A 3-Pin(3+Tab) TO-251 Tube
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO251-3, RoHS
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***ineon SCT
Trans MOSFET N-CH 700V 4.3A 3-Pin(3+Tab) TO-251 Tube, PG-TO251-3, RoHS
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***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
***icroelectronics
N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in IPAK package
***el Electronic
STMICROELECTRONICS STU9N65M2 Power MOSFET, N Channel, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
***nell
MOSFET, N CHANNEL, 650V, 5A, TO-251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.79ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;
***icroelectronics
N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in IPAK package
***ical
Trans MOSFET N-CH 650V 5.5A 3-Pin(3+Tab) IPAK Tube
***ark
Mosfet, N-Ch, 650V, 5.5A, 150Deg C; Transistor Polarity:n Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.71Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
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N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh M2 Power MOSFET in IPAK package
***ure Electronics
N-Channel 600 V 950 mOhm Through Hole Mdmesh II Plus Power Mosfet - IPAK
***r Electronics
Power Field-Effect Transistor, 5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***et Europe
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***ronik
N-CH 600V 4,3A 1000mOhm TO251
*** Electronics
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***el Nordic
Contact for details
***emi
Power MOSFET 600V 5.9A 900mOhm Single N-Channel DPAK
***ical
Trans MOSFET N-CH 600V 5.7A 3-Pin(2+Tab) DPAK Tube
***ark
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Teil # Mfg. Beschreibung Aktie Preis
IPS65R950C6AKMA1
DISTI # IPS65R950C6AKMA1-ND		Infineon Technologies AGMOSFET N-CH 650V 4.5A TO-251
RoHS: Compliant
Min Qty: 1
Container: Tube		150In Stock
  • 100:$0.8110
  • 25:$0.9872
  • 10:$1.0400
  • 1:$1.1600
IPS65R950C6AKMA1
DISTI # IPS65R950C6AKMA1		Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Bulk (Alt: IPS65R950C6AKMA1)
Min Qty: 715
Container: Bulk		Americas - 0
  • 7150:$0.4439
  • 3575:$0.4519
  • 2145:$0.4679
  • 1430:$0.4859
  • 715:$0.5039
IPS65R950C6
DISTI # 726-IPS65R950C6		Infineon Technologies AGMOSFET N-Ch 700V 4.5A IPAK-3
RoHS: Compliant		1465
  • 1:$1.1100
  • 10:$0.9410
  • 100:$0.7220
  • 500:$0.6390
  • 1000:$0.5040
IPS65R950C6AKMA1
DISTI # 726-IPS65R950C6AKMA1		Infineon Technologies AGMOSFET N-Ch 700V 4.5A IPAK-3
RoHS: Compliant		0
    IPS65R950C6AKMA1Infineon Technologies AGPower Bipolar Transistor
    RoHS: Compliant    		35
    • 1000:$0.4600
    • 500:$0.4900
    • 100:$0.5100
    • 25:$0.5300
    • 1:$0.5700
    Bild Teil # Beschreibung
    IPS65R950C6AKMA1

    Mfr.#: IPS65R950C6AKMA1

    OMO.#: OMO-IPS65R950C6AKMA1

    		 MOSFET N-Ch 700V 4.5A IPAK-3
    IPS65R950C6

    Mfr.#: IPS65R950C6

    OMO.#: OMO-IPS65R950C6-1190

    		 Trans MOSFET N-CH 700V 4.5A 3-Pin(3+Tab) TO-251
    IPS65R950C6AKMA1

    Mfr.#: IPS65R950C6AKMA1

    OMO.#: OMO-IPS65R950C6AKMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 650V 4.5A TO-251
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3000
    Menge eingeben:
    Der aktuelle Preis von IPS65R950C6AKMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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