PartNumber | IPS65R1K4C6AKMA1 | IPS65R1K0CEAKMA2 | IPS65R1K0CEAKMA1 |
Description | MOSFET N-Ch 700V 3.2A IPAK-3 | MOSFET CONSUMER | MOSFET N-CH 650V 4.3A TO-251-3 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-251-3 | PG-TO-251-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
Id Continuous Drain Current | 3.2 A | 7.2 A | - |
Rds On Drain Source Resistance | 1.26 Ohms | 1 Ohms | - |
Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | - |
Vgs Gate Source Voltage | 20 V | 10 V | - |
Qg Gate Charge | 10.5 nC | 15.3 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 28 W | 68 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | CoolMOS | - | - |
Packaging | Tube | Tube | - |
Height | 6.22 mm | - | - |
Length | 6.73 mm | - | - |
Series | CoolMOS C6 | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 2.38 mm | - | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Fall Time | 18.2 ns | 13.6 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 5.9 ns | 5.2 ns | - |
Factory Pack Quantity | 1500 | 1500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 33 ns | 41 ns | - |
Typical Turn On Delay Time | 7.7 ns | 6.6 ns | - |
Part # Aliases | IPS65R1K4C6 SP000991120 | IPS65R1K0CE SP001724356 | - |
Unit Weight | 0.012102 oz | - | - |