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IPS65R650CEAKMA1

IPS65R650CEAKMA1
Mfr. #:
IPS65R650CEAKMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPS65R650CEAKMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPS65R650CEAKMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Vds - Drain-Source-Durchbruchspannung:
650 V
Handelsname:
CoolMOS
Verpackung:
Rohr
Serie:
CoolMOS CE
Marke:
Infineon-Technologien
Feuchtigkeitsempfindlich:
ja
Produktart:
MOSFET
Werkspackungsmenge:
1500
Unterkategorie:
MOSFETs
Teil # Aliase:
IPS65R650CE SP001422888
Tags
IPS65R6, IPS65R, IPS65, IPS6, IPS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
Trans MOSFET N-CH 650V 10.1A 3-Pin(3+Tab) TO-251 Tube, PG-TO251-3, RoHS
***et
650V and 700V CoolMOS N-Channel Power MOSFET
***i-Key
MOSFET N-CH 700V 10.1A TO251-3
***ineon
CoolMOS CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. | Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
CoolMOS CE Power MOSFETs - 600-650V
Infineon 600V/650V CoolMOS™ CE N-Channel Power MOSFETs are a technology platform of Infineon's market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. These 600V/650V CoolMOS™ MOSFETs are cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still been price attractive. These devices target low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications.
Teil # Mfg. Beschreibung Aktie Preis
IPS65R650CEAKMA1
DISTI # V36:1790_16141102		Infineon Technologies AGTrans MOSFET N-CH 650V 10.1A Tube
RoHS: Compliant		0
    IPS65R650CEAKMA1
    DISTI # IPS65R650CEAKMA1-ND    		Infineon Technologies AGMOSFET N-CH 700V 10.1A IPAK
    RoHS: Compliant
    Min Qty: 1500
    Container: Tube    		Temporarily Out of Stock
    • 1500:$0.4173
    IPS65R650CEAKMA1
    DISTI # IPS65R650CEAKMA1    		Infineon Technologies AG650V and 700V CoolMOS N-Channel Power MOSFET - Rail/Tube (Alt: IPS65R650CEAKMA1)
    RoHS: Compliant
    Min Qty: 1500
    Container: Tube    		Americas - 0
    • 15000:$0.3149
    • 9000:$0.3209
    • 6000:$0.3319
    • 3000:$0.3449
    • 1500:$0.3569
    IPS65R650CEAKMA1
    DISTI # 726-IPS65R650CEAKMA1    		Infineon Technologies AGMOSFET
    RoHS: Compliant    		0
    • 1:$0.9200
    • 10:$0.7700
    • 100:$0.4970
    • 1000:$0.3980
    Bild Teil # Beschreibung
    IPS65R650CEAKMA1

    Mfr.#: IPS65R650CEAKMA1

    OMO.#: OMO-IPS65R650CEAKMA1

    		 MOSFET
    IPS65R650CEAKMA1

    Mfr.#: IPS65R650CEAKMA1

    OMO.#: OMO-IPS65R650CEAKMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 700V 10.1A IPAK
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5500
    Menge eingeben:
    Der aktuelle Preis von IPS65R650CEAKMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,92 $
    0,92 $
    10
    0,77 $
    7,70 $
    100
    0,50 $
    49,70 $
    1000
    0,40 $
    398,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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