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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| RFD8P06ESM DISTI # RFD8P06ESM | Renesas Electronics Corporation | - Bulk (Alt: RFD8P06ESM) RoHS: Not Compliant Min Qty: 1137 Container: Bulk | Americas - 0 |
|
| RFD8P06ESM9A DISTI # RFD8P06ESM9A | Renesas Electronics Corporation | (Alt: RFD8P06ESM9A) RoHS: Compliant Min Qty: 1 | Europe - 0 | |
| RFD8P06E | Harris Semiconductor | Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Not Compliant | 2278 |
|
| RFD8P06ESM | Harris Semiconductor | Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | 414 |
|
| RFD8P06E | Harris Semiconductor | 8 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA | 19 |
|
| RFD8P06ESM | Intersil Corporation | MOSFET Transistor, P-Channel, TO-252AA | 1125 |
|
| RFD8P06ESM | Harris Semiconductor | MOSFET Transistor, P-Channel, TO-252AA | 167 |
|
| RFD8P06ESM9A | Harris Semiconductor | MOSFET Transistor, P-Channel, TO-252AA (Also Known As: RFD8P06ESM) | 413 |
|
| RFD8P06ESM9A | Harris Semiconductor | MOSFET Transistor, P-Channel, TO-252AA | 413 |
|
| RFD8P06ESM9A | Intersil Corporation | MOSFET Transistor, P-Channel, TO-252AA | 1087 |
|
| RFD8P06ESM9A | Intersil Corporation | MOSFET Transistor, P-Channel, TO-252AA (Also Known As: RFD8P06ESM) | 1087 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: RFD8P05 OMO.#: OMO-RFD8P05 |
MOSFET TO-251AA P-Ch Power |
|
Mfr.#: RFD802 OMO.#: OMO-RFD802-1190 |
Neu und Original |
|
|
Mfr.#: RFD8P03 OMO.#: OMO-RFD8P03-1190 |
Neu und Original |
|
|
Mfr.#: RFD8P03L OMO.#: OMO-RFD8P03L-1190 |
Neu und Original |
|
Mfr.#: RFD8P05 OMO.#: OMO-RFD8P05-ON-SEMICONDUCTOR |
MOSFET P-CH 50V 8A I-PAK |
|
|
Mfr.#: RFD8P05SM (TO-251) OMO.#: OMO-RFD8P05SM-TO-251--1190 |
Neu und Original |
|
|
Mfr.#: RFD8P06E OMO.#: OMO-RFD8P06E-1190 |
Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
|
|
Mfr.#: RFD8P06ESM OMO.#: OMO-RFD8P06ESM-1190 |
Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
|
|
Mfr.#: RFD8P06LE OMO.#: OMO-RFD8P06LE-1190 |
Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
|
|
Mfr.#: RFD8P06LESM OMO.#: OMO-RFD8P06LESM-1190 |
8 A, 60 V, 0.33 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
