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IRFH5110TR2PBF

IRFH5110TR2PBF
Mfr. #:
IRFH5110TR2PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 100V 5X6 PQFN
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFH5110TR2PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
IR
Produktkategorie
FETs - Einzeln
Tags
IRFH511, IRFH51, IRFH5, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
100V Single N-Channel HEXFET Power MOSFET in a PQFN package
***(Formerly Allied Electronics)
MOSFET 100V, Gen 10.7, 11.68 mOhm max, 56.2 nC Qg
***trelec
MOSFET PQFN-8 (5x6) N 100V 11 A
***et
Trans MOSFET N-CH 10V 11A 8-Pin QFN T/R
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 11A I(D), 100V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET,N CH,100V,11A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:114W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:63A; Power Dissipation Pd:114W; Voltage Vgs Max:20V
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6 package, PG-TDSON-8, RoHS
***Yang
Trans MOSFET N-CH 100V 11A 8-Pin PQFN EP T/R - Tape and Reel
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***nell
MOSFET N CH 100V, 11A, PQFN 5X6; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0106ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:3.6W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
***(Formerly Allied Electronics)
MOSFET, 100V, 55A, 14.9 mOhm, 39 nC Qg, PQFN 5x6
***ernational Rectifier
100V Single N-Channel HEXFET Power MOSFET in a PQFN package
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0126ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET,N CH,100V,55A,PQFN56; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):12.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:55A; Power Dissipation Pd:3.6W; Voltage Vgs Max:20V
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ark
T&R / MOSFET, 75V, 75A, 8.5 mOhm, 48 nC Qg, PQFN 5x6
***et
Trans MOSFET N-CH 75V 14A 8-Pin PQFN T/R
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***trelec
MOSFET Operating temperature: -55...+150 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 100 W
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:89A; Drain Source Voltage Vds:60V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes
***emi
N-Channel PowerTrench® MOSFET 100V, 45A, 6mΩ
***ure Electronics
Single N-Channel 100 V 2.7 W 50 nC PowerTrench Surface Mount Mosfet - POWER 56-8
***r Electronics
Power Field-Effect Transistor, 14A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
***ser
MOSFETs- Power and Small Signal 24V 15A N-Channel No-Cancel/No-Return
***ponent Stockers USA
11.4 A 24 V 0.013 ohm 4 CHANNEL N-CHANNEL Si POWER MOSFET
***r Electronics
Power Field-Effect Transistor, 11.4A I(D), 24V, 0.013ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Teil # Mfg. Beschreibung Aktie Preis
IRFH5110TR2PBF
DISTI # IRFH5110TR2PBFCT-ND		Infineon Technologies AGMOSFET N-CH 100V 5X6 PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    IRFH5110TR2PBF
    DISTI # IRFH5110TR2PBFDKR-ND    		Infineon Technologies AGMOSFET N-CH 100V 5X6 PQFN
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      IRFH5110TR2PBF
      DISTI # 70019271      		Infineon Technologies AGMOSFET 100V,Gen 10.7,11.68 mOhm max,56.2 nC Qg
      RoHS: Compliant      		0
      • 1:$1.5900
      • 2:$1.5580
      • 5:$1.5110
      • 10:$1.4470
      • 25:$1.3520
      IRFH5110TR2PBF
      DISTI # 942-IRFH5110TR2PBF      		Infineon Technologies AGMOSFET MOSFT 100V Gen 10.7 11.68mOhm 56.2nC Qg
      RoHS: Compliant      		0
        IRFH5110TR2PBFInternational Rectifier 80
        • 35:$1.3335
        • 10:$2.2225
        • 1:$3.5560
        IRFH5110TR2PBFInternational Rectifier 
        RoHS: Compliant        		Europe - 400
          Bild Teil # Beschreibung
          IRFH5110TRPBF

          Mfr.#: IRFH5110TRPBF

          OMO.#: OMO-IRFH5110TRPBF

          		 MOSFET 100V 1 N-CH HEXFET 12.4mOhms 48nC
          IRFH5110TRPBF.

          Mfr.#: IRFH5110TRPBF.

          OMO.#: OMO-IRFH5110TRPBF--1190

          		 Neu und Original
          IRFH5110TR2PBF

          Mfr.#: IRFH5110TR2PBF

          OMO.#: OMO-IRFH5110TR2PBF-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 100V 5X6 PQFN
          IRFH5110TRPBF

          Mfr.#: IRFH5110TRPBF

          OMO.#: OMO-IRFH5110TRPBF-INFINEON-TECHNOLOGIES

          		 RF Bipolar Transistors MOSFET 100V 1 N-CH HEXFET 12.4mOhms 48nC
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          1500
          Menge eingeben:
          Der aktuelle Preis von IRFH5110TR2PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
          Menge
          Stückpreis
          ext. Preis
          1
          2,00 $
          2,00 $
          10
          1,90 $
          19,00 $
          100
          1,80 $
          180,02 $
          500
          1,70 $
          850,10 $
          1000
          1,60 $
          1 600,20 $
          Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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