 |  | | |
| PartNumber | IRFH5106TR2PBF | IRFH5104TR2PBF | IRFH5104TRPBF |
| Description | MOSFET MOSFT 60V Gen 10.7 4.98mOhm 56.2nC Qg | IGBT Transistors MOSFET MOSFT 40V 100A 3.5mOhm 53nC Qg | RF Bipolar Transistors MOSFET 40V 1 N-CH HEXFET 3.5mOhms 53nC |
| Manufacturer | Infineon | - | International Rectifier |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | PQFN-8 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 21 A | - | - |
| Rds On Drain Source Resistance | 5.6 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 50 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 3.6 W | - | - |
| Configuration | Single | - | Single Quad Drain Triple Source |
| Packaging | Reel | - | Reel |
| Height | 0.83 mm | - | - |
| Length | 6 mm | - | - |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 5 mm | - | - |
| Brand | Infineon / IR | - | - |
| Forward Transconductance Min | 82 S | - | - |
| Fall Time | 9.5 ns | - | 10 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 13 ns | - | 15 ns |
| Factory Pack Quantity | 400 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SP001551906 | - | - |
| Package Case | - | - | PQFN-8 |
| Pd Power Dissipation | - | - | 114 W |
| Minimum Operating Temperature | - | - | - 55 C |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 100 A |
| Vds Drain Source Breakdown Voltage | - | - | 40 V |
| Rds On Drain Source Resistance | - | - | 3.5 mOhms |
| Typical Turn Off Delay Time | - | - | 20 ns |
| Typical Turn On Delay Time | - | - | 9.5 ns |
| Qg Gate Charge | - | - | 53 nC |
| Channel Mode | - | - | Enhancement |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IRFH5110TRPBF | MOSFET 100V 1 N-CH HEXFET 12.4mOhms 48nC | |
| IRFH5106TR2PBF | MOSFET N-CH 60V 100A 5X6 PQFN | ||
| IRFH5110TR2PBF | MOSFET N-CH 100V 5X6 PQFN | ||
| IRFH5106TRPBF | IGBT Transistors MOSFET 60V 1 N-CH HEXFET 5.6mOhms 50nC | ||
| IRFH5104TR2PBF | IGBT Transistors MOSFET MOSFT 40V 100A 3.5mOhm 53nC Qg | ||
| IRFH5104TRPBF | RF Bipolar Transistors MOSFET 40V 1 N-CH HEXFET 3.5mOhms 53nC | ||
| IRFH5110TRPBF | RF Bipolar Transistors MOSFET 100V 1 N-CH HEXFET 12.4mOhms 48nC | ||
Infineon / IR |
IRFH5106TRPBF | MOSFET 60V 1 N-CH HEXFET 5.6mOhms 50nC | |
| IRFH5106TR2PBF | MOSFET MOSFT 60V Gen 10.7 4.98mOhm 56.2nC Qg | ||
| IRFH5106TRPBF. | Neu und Original | ||
| IRFH5110TRPBF. | Neu und Original |