BSZ031NE2LS5ATMA1

BSZ031NE2LS5ATMA1
Mfr. #:
BSZ031NE2LS5ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET LV POWER MOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSZ031NE2LS5ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TSDSON-8
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
25 V
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
1.1 mm
Länge:
3.3 mm
Serie:
OptiMOS 5
Breite:
3.3 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Teil # Aliase:
BSZ031NE2LS5 SP001385378
Tags
BSZ03, BSZ0, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
BSZ031NE2LS5 series 25V 40A 3.1 mOhm N-Ch S3O8 OptiMOS™ 5
***ineon SCT
With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation, PG-TSDSON-8, RoHS
***ineon
With the new OptiMOS 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. | Summary of Features: Best-in-class on-state resistance; Benchmark switching performance (lowest figure of merits R on x Q g and R on x Q gd); RoHS compliant and halogen free; Optimized EMI behavior (integrated damping network) | Benefits: Highest efficiency; Highest power density with S3O8 or Power Block package; Reduction of overall system costs; Operation at high-switching frequency | Target Applications: Desktop and server; Single-phase and multiphase POL; CPU/GPU VR in notebooks; High power density voltage regulator; Or-ing; E-fuse
Teil # Mfg. Beschreibung Aktie Preis
BSZ031NE2LS5ATMA1
DISTI # V36:1790_13994213
Infineon Technologies AGTrans MOSFET N-CH 25V 40A 8-Pin TSDSON EP T/R
RoHS: Compliant
0
  • 5000000:$0.3802
  • 2500000:$0.3804
  • 500000:$0.3997
  • 50000:$0.4326
  • 5000:$0.4381
BSZ031NE2LS5ATMA1
DISTI # BSZ031NE2LS5ATMA1-ND
Infineon Technologies AGMOSFET N-CH 25V 19A 8SON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 5000:$0.4381
BSZ031NE2LS5ATMA1
DISTI # BSZ031NE2LS5ATMA1
Infineon Technologies AGTrans MOSFET N-CH 25V 19A 8SON - Tape and Reel (Alt: BSZ031NE2LS5ATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 50000:$0.3979
  • 30000:$0.4049
  • 20000:$0.4189
  • 10000:$0.4349
  • 5000:$0.4519
BSZ031NE2LS5ATMA1
DISTI # SP001385378
Infineon Technologies AGTrans MOSFET N-CH 25V 19A 8SON (Alt: SP001385378)
RoHS: Compliant
Min Qty: 5000
Europe - 0
  • 50000:€0.3569
  • 30000:€0.3839
  • 20000:€0.4159
  • 10000:€0.4539
  • 5000:€0.5549
BSZ031NE2LS5ATMA1
DISTI # 726-BSZ031NE2LS5ATMA
Infineon Technologies AGMOSFET LV POWER MOS
RoHS: Compliant
4104
  • 1:$1.0300
  • 10:$0.8790
  • 100:$0.6750
  • 500:$0.5970
  • 1000:$0.4710
  • 5000:$0.4180
  • 10000:$0.4020
Bild Teil # Beschreibung
BSZ065N06LS5ATMA1

Mfr.#: BSZ065N06LS5ATMA1

OMO.#: OMO-BSZ065N06LS5ATMA1

MOSFET MV POWER MOS
BSZ013NE2LS5IATMA1

Mfr.#: BSZ013NE2LS5IATMA1

OMO.#: OMO-BSZ013NE2LS5IATMA1

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CSD18540Q5B

Mfr.#: CSD18540Q5B

OMO.#: OMO-CSD18540Q5B

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BAT46WJ,115

Mfr.#: BAT46WJ,115

OMO.#: OMO-BAT46WJ-115

Schottky Diodes & Rectifiers Schottky Diodes 100V 250mA Single
ERJ-3EKF1003V

Mfr.#: ERJ-3EKF1003V

OMO.#: OMO-ERJ-3EKF1003V

Thick Film Resistors - SMD 0603 100Kohms 1% AEC-Q200
BSZ013NE2LS5IATMA1

Mfr.#: BSZ013NE2LS5IATMA1

OMO.#: OMO-BSZ013NE2LS5IATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 25V 32A 8SON
BAT46WJ,115

Mfr.#: BAT46WJ,115

OMO.#: OMO-BAT46WJ-115-NEXPERIA

DIODE SCHOTTKY 100V 250MA SOD323
C1608X5R1V475K080AC

Mfr.#: C1608X5R1V475K080AC

OMO.#: OMO-C1608X5R1V475K080AC-TDK

Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 4.7uF 35volts X5R +/-10% GP
ERJ-2RKF1500X

Mfr.#: ERJ-2RKF1500X

OMO.#: OMO-ERJ-2RKF1500X-PANASONIC

Thick Film Resistors - SMD 0402 150ohms 1% Tol
ERJ-2RKF1001X

Mfr.#: ERJ-2RKF1001X

OMO.#: OMO-ERJ-2RKF1001X-PANASONIC

Thick Film Resistors - SMD 0402 1Kohms 1% Tol
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1987
Menge eingeben:
Der aktuelle Preis von BSZ031NE2LS5ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,03 $
1,03 $
10
0,88 $
8,79 $
100
0,68 $
67,50 $
500
0,60 $
298,50 $
1000
0,47 $
471,00 $
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