NGTB40N65FL2WG

NGTB40N65FL2WG
Mfr. #:
NGTB40N65FL2WG
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors 650V/40A FAST IGBT FSII T
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NGTB40N65FL2WG Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTB40N65FL2WG DatasheetNGTB40N65FL2WG Datasheet (P4-P6)NGTB40N65FL2WG Datasheet (P7-P9)NGTB40N65FL2WG Datasheet (P10)
ECAD Model:
Mehr Informationen:
NGTB40N65FL2WG Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
2.1 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
80 A
Pd - Verlustleistung:
366 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
80 A
Marke:
ON Semiconductor
Gate-Emitter-Leckstrom:
200 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
30
Unterkategorie:
IGBTs
Gewichtseinheit:
1.340411 oz
Tags
NGTB40N65, NGTB40N6, NGTB40, NGTB4, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Igbt Single Transistor, 80 A, 1.7 V, 366 W, 650 V, To-247, 3 Rohs Compliant: Yes
***ied Electronics & Automation
NGTB40N65FL2WG; IGBT Transistor; 80 A 650 V; 1MHz; 3-Pin TO-247
***ical
Trans IGBT Chip N-CH 650V 80A 36000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
NGTB40N65: 650 V 80 A 366 W Through Hole Field Stop II IGBT - TO-247-3
***nell
650V/40A FAST IGBT FSII T; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 366W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
Field Stop II Series IGBTs
ON Semiconductor's Field Stop II Series IGBTs feature a robust and cost effective Field Stop II Trench construction, and provides superior performance, offering both low on state voltage and minimal switching loss. Features include extremely efficient trench, short circuit capable, available in rates of 15A to 75A, reduction in switching losses, and reduction in input capacitance. These IGBTs are well suited for UPS, solar, half bridge resonant, or demanding switching applications. Incorporated into each device is a soft and fast co−packaged free wheeling diode with a low forward voltage.Learn More
Teil # Mfg. Beschreibung Aktie Preis
NGTB40N65FL2WG
DISTI # V99:2348_07299939
ON SemiconductorTrans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
140
  • 2500:$0.7536
  • 1000:$0.7591
  • 500:$0.7755
  • 250:$0.7851
  • 100:$0.7895
  • 10:$0.8003
  • 1:$2.8755
NGTB40N65FL2WG
DISTI # NGTB40N65FL2WGOS-ND
ON SemiconductorIGBT 650V 80A 366W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
90In Stock
  • 1020:$2.9106
  • 510:$3.4511
  • 120:$4.0541
  • 30:$4.6777
  • 1:$5.5100
NGTB40N65FL2WG
DISTI # 25863325
ON SemiconductorTrans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
140
  • 3:$2.8755
NGTB40N65FL2WG
DISTI # NGTB40N65FL2WG
ON SemiconductorTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Bulk (Alt: NGTB40N65FL2WG)
Min Qty: 114
Container: Bulk
Americas - 0
    NGTB40N65FL2WG
    DISTI # NGTB40N65FL2WG
    ON SemiconductorTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: NGTB40N65FL2WG)
    RoHS: Compliant
    Min Qty: 180
    Container: Tube
    Asia - 0
    • 180:$3.9600
    • 360:$3.8077
    • 540:$3.6667
    • 900:$3.5357
    • 1800:$3.4138
    • 4500:$3.3000
    • 9000:$3.2459
    NGTB40N65FL2WG
    DISTI # 31Y3222
    ON SemiconductorIGBT Single Transistor, 80 A, 1.7 V, 366 W, 650 V, TO-247, 3 RoHS Compliant: Yes174
    • 5000:$2.5400
    • 2500:$2.6400
    • 1000:$2.7800
    • 500:$3.2900
    • 250:$3.6700
    • 100:$4.0600
    • 10:$4.4600
    • 1:$5.5500
    NGTB40N65FL2WG
    DISTI # 70600204
    ON SemiconductorNGTB40N65FL2WG,IGBT Transistor,80 A 650 V,1MHz,3-Pin TO-247
    RoHS: Compliant
    0
    • 2:$3.3700
    • 10:$3.0000
    • 20:$2.9000
    • 50:$2.8400
    • 100:$2.7900
    NGTB40N65FL2WG
    DISTI # 863-NGTB40N65FL2WG
    ON SemiconductorIGBT Transistors 650V/40A FAST IGBT FSII T
    RoHS: Compliant
    165
    • 1:$5.2500
    • 10:$4.4600
    • 100:$3.8700
    • 250:$3.6700
    • 500:$3.2900
    • 1000:$2.7800
    • 2500:$2.6400
    NGTB40N65FL2WGON SemiconductorInsulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel
    RoHS: Compliant
    3111
    • 1000:$2.9000
    • 500:$3.0500
    • 100:$3.1700
    • 25:$3.3100
    • 1:$3.5600
    NGTB40N65FL2WG
    DISTI # 8427905P
    ON SemiconductorIGBT FIELD STOP II 650V 40A DIODE TO247, TU122
    • 100:£2.9000
    • 50:£3.1950
    • 20:£3.2700
    • 10:£3.3400
    NGTB40N65FL2WGON Semiconductor 2271
      NGTB40N65FL2WG
      DISTI # 2452040
      ON Semiconductor650V/40A FAST IGBT FSII T
      RoHS: Compliant
      174
      • 500:£2.2600
      • 250:£2.5200
      • 100:£2.6600
      • 10:£3.0600
      • 1:£4.4400
      NGTB40N65FL2WG
      DISTI # 2452040
      ON Semiconductor650V/40A FAST IGBT FSII T
      RoHS: Compliant
      174
      • 2500:$3.9800
      • 1000:$4.1900
      • 500:$4.9600
      • 250:$5.5300
      • 100:$5.8300
      • 10:$6.7200
      • 1:$7.9100
      Bild Teil # Beschreibung
      NGTB40N135IHRWG

      Mfr.#: NGTB40N135IHRWG

      OMO.#: OMO-NGTB40N135IHRWG

      IGBT Transistors 1350V/40A IGBT FSII TO-24
      NGTB40N65IHL2WG

      Mfr.#: NGTB40N65IHL2WG

      OMO.#: OMO-NGTB40N65IHL2WG

      IGBT Transistors 650V/40A FAST IGBT FSII T
      NGTB40N65IHRWG

      Mfr.#: NGTB40N65IHRWG

      OMO.#: OMO-NGTB40N65IHRWG

      IGBT Transistors 40A 650V MONOLITHIC RC IG
      NGTB40N120FL2WAG

      Mfr.#: NGTB40N120FL2WAG

      OMO.#: OMO-NGTB40N120FL2WAG

      IGBT Transistors 1200V/40 FAST IGBT FSII T
      NGTB40N120SWG

      Mfr.#: NGTB40N120SWG

      OMO.#: OMO-NGTB40N120SWG-ON-SEMICONDUCTOR

      Trans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Tube
      NGTB40N135IHRWG

      Mfr.#: NGTB40N135IHRWG

      OMO.#: OMO-NGTB40N135IHRWG-ON-SEMICONDUCTOR

      IGBT Transistors 1350V/40A IGBT FSII TO-24
      NGTB40N120IHLWG

      Mfr.#: NGTB40N120IHLWG

      OMO.#: OMO-NGTB40N120IHLWG-ON-SEMICONDUCTOR

      IGBT Transistors 1200V/40A FS1 IGBT IH
      NGTB40N120FL2WG PB-FREE

      Mfr.#: NGTB40N120FL2WG PB-FREE

      OMO.#: OMO-NGTB40N120FL2WG-PB-FREE-1190

      Neu und Original
      NGTB40N120FL3

      Mfr.#: NGTB40N120FL3

      OMO.#: OMO-NGTB40N120FL3-1190

      Neu und Original
      NGTB40N120FL3WG

      Mfr.#: NGTB40N120FL3WG

      OMO.#: OMO-NGTB40N120FL3WG-ON-SEMICONDUCTOR

      IGBT 1200V 160A TO247
      Verfügbarkeit
      Aktie:
      165
      Auf Bestellung:
      2148
      Menge eingeben:
      Der aktuelle Preis von NGTB40N65FL2WG dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      5,25 $
      5,25 $
      10
      4,46 $
      44,60 $
      100
      3,87 $
      387,00 $
      250
      3,67 $
      917,50 $
      500
      3,29 $
      1 645,00 $
      1000
      2,78 $
      2 780,00 $
      2500
      2,64 $
      6 600,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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