NGTB40N65 stock, NGTB40N65, NGTB40N65FL2WG


PartNumber	NGTB40N65FL2WG	NGTB40N65IHL2WG	NGTB40N65IHRTG
Description	IGBT Transistors 650V/40A FAST IGBT FSII T	IGBT Transistors 650V/40A FAST IGBT FSII T	IGBT Transistors 650V/40A MONOLITHIC RC IG
Manufacturer	ON Semiconductor	ON Semiconductor	ON Semiconductor
Product Category	IGBT Transistors	IGBT Transistors	IGBT Transistors
RoHS	Y	Y	Y
Technology	Si	Si	Si
Package / Case	TO-247-3	-	TO-3P
Mounting Style	Through Hole	-	Through Hole
Configuration	Single	-	Single
Collector Emitter Voltage VCEO Max	650 V	-	650 V
Collector Emitter Saturation Voltage	2.1 V	-	1.55 V
Maximum Gate Emitter Voltage	20 V	-	-
Continuous Collector Current at 25 C	80 A	-	80 A
Pd Power Dissipation	366 W	-	405 W
Minimum Operating Temperature	- 55 C	-	- 40 C
Maximum Operating Temperature	+ 175 C	-	+ 175 C
Packaging	Tube	Tube	Tube
Continuous Collector Current Ic Max	80 A	-	-
Brand	ON Semiconductor	ON Semiconductor	ON Semiconductor
Gate Emitter Leakage Current	200 nA	-	100 nA
Product Type	IGBT Transistors	IGBT Transistors	IGBT Transistors
Factory Pack Quantity	30	30	30
Subcategory	IGBTs	IGBTs	IGBTs
Unit Weight	1.340411 oz	-	0.194007 oz

Search Part Number : "NGTB40N65", Match & Start with "NGTB40N65" - Total : 8

Hersteller	Teil #	Beschreibung
	NGTB40N65FL2WG	IGBT Transistors 650V/40A FAST IGBT FSII T
	NGTB40N65IHL2WG	IGBT Transistors 650V/40A FAST IGBT FSII T
	NGTB40N65IHRWG	IGBT Transistors 40A 650V MONOLITHIC RC IG
	NGTB40N65IHRTG	IGBT Transistors 650V/40A MONOLITHIC RC IG
ON Semiconductor	NGTB40N65IHL2WG	IGBT Transistors 650V/40A FAST IGBT FSII T
	NGTB40N65FL2WG	IGBT Transistors 650V/40A FAST IGBT FSII T
	NGTB40N65IHRTG	650V/40A RC IGBT
	NGTB40N65IHRWG	IGBT FIELD STOP 650V 80A TO247

NGTB40N65