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NGTB40N65IHRTG

NGTB40N65IHRTG
Mfr. #:
NGTB40N65IHRTG
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors 650V/40A MONOLITHIC RC IG
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NGTB40N65IHRTG Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTB40N65IHRTG DatasheetNGTB40N65IHRTG Datasheet (P4-P6)NGTB40N65IHRTG Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
NGTB40N65IHRTG Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-3P
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
1.55 V
Kontinuierlicher Kollektorstrom bei 25 C:
80 A
Pd - Verlustleistung:
405 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 175 C
Verpackung:
Rohr
Marke:
ON Semiconductor
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
30
Unterkategorie:
IGBTs
Gewichtseinheit:
0.194007 oz
Tags
NGTB40N65I, NGTB40N65, NGTB40N6, NGTB40, NGTB4, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
IGBT, Monolithic with Reverse Conducting Diode, 650 V, 40 A 650 V Monolithic reverse conducting IGBT
***ical
Trans IGBT Chip N-CH 650V 80A 405000mW 3-Pin(3+Tab) TO-3P Tube
***nell
TRANSISTOR, IGBT, 650V, 80A, TO-3P
***ark
Transistor, Igbt, 650V, 80A, To-3P; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.55V; Power Dissipation Pd:405W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-3P; No. Of Pins:3Pins; Rohs Compliant: Yes
NGTB 25-75A Insulated Gate Bipolar Transistors
ON Semiconductor NGTB 25-75A Insulated Gate Bipolar Transistors feature a robust and cost effective Trench construction. They provide superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. These IGBTs are well suited for welding applications. Incorporated into the device is a soft and fast co−packaged  free wheeling diode with a low forward voltage.Learn More
Teil # Mfg. Beschreibung Aktie Preis
NGTB40N65IHRTG
DISTI # V36:1790_18357508		ON Semiconductor650V/40A MONOLITHIC RC IG0
    NGTB40N65IHRTG
    DISTI # V99:2348_18357508    		ON Semiconductor650V/40A MONOLITHIC RC IG0
      NGTB40N65IHRTG
      DISTI # NGTB40N65IHRTGOS-ND      		ON Semiconductor650V/40A RC IGBT
      RoHS: Compliant
      Min Qty: 1
      Container: Tube      		85In Stock
      • 30:$2.5727
      • 10:$2.8810
      • 1:$3.1900
      NGTB40N65IHRTG
      DISTI # 31AC6710      		ON SemiconductorTRANSISTOR, IGBT, 650V, 80A, TO-3P,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):1.55V,Power Dissipation Pd:405W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-3P,No. of Pins:3Pins,RoHS Compliant: Yes0
        NGTB40N65IHRTG
        DISTI # 863-NGTB40N65IHRTG        		ON SemiconductorIGBT Transistors 650V/40A MONOLITHIC RC IG
        RoHS: Compliant        		96
        • 1:$2.8800
        • 10:$2.4500
        • 100:$1.9600
        • 500:$1.7100
        • 1000:$1.4200
        • 2500:$1.3200
        • 5000:$1.2700
        NGTB40N65IHRTG
        DISTI # 1718330        		ON SemiconductorIGBT MONOLITHIC REVERSE CONDUCTING DIODE, TU130
        • 60:£0.9900
        • 30:£1.0610
        NGTB40N65IHRTG
        DISTI # 2775437        		ON SemiconductorTRANSISTOR, IGBT, 650V, 80A, TO-3P
        RoHS: Compliant        		0
        • 1000:$2.1900
        • 500:$2.4200
        • 250:$2.7600
        • 100:$3.0600
        • 10:$3.5300
        • 1:$4.0500
        NGTB40N65IHRTGON Semiconductor650V,40A,IGBT Monolithic with Reverse Conducting Diode10050
        • 1:$2.5400
        • 100:$1.9100
        • 500:$1.6300
        • 1000:$1.5300
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        Verfügbarkeit
        Aktie:
        72
        Auf Bestellung:
        2055
        Menge eingeben:
        Der aktuelle Preis von NGTB40N65IHRTG dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        2,88 $
        2,88 $
        10
        2,45 $
        24,50 $
        100
        1,96 $
        196,00 $
        500
        1,71 $
        855,00 $
        1000
        1,42 $
        1 420,00 $
        2500
        1,32 $
        3 300,00 $
        5000
        1,27 $
        6 350,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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