NGTB40N65I

NGTB40N65IHL2WG vs NGTB40N65IHRWG vs NGTB40N65IHRTG

 
PartNumberNGTB40N65IHL2WGNGTB40N65IHRWGNGTB40N65IHRTG
DescriptionIGBT Transistors 650V/40A FAST IGBT FSII TIGBT Transistors 40A 650V MONOLITHIC RC IGIGBT Transistors 650V/40A MONOLITHIC RC IG
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYYY
TechnologySiSiSi
PackagingTubeTubeTube
BrandON SemiconductorON SemiconductorON Semiconductor
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity303030
SubcategoryIGBTsIGBTsIGBTs
Package / Case--TO-3P
Mounting Style--Through Hole
Configuration--Single
Collector Emitter Voltage VCEO Max--650 V
Collector Emitter Saturation Voltage--1.55 V
Continuous Collector Current at 25 C--80 A
Pd Power Dissipation--405 W
Minimum Operating Temperature--- 40 C
Maximum Operating Temperature--+ 175 C
Gate Emitter Leakage Current--100 nA
Unit Weight--0.194007 oz
Hersteller Teil # Beschreibung RFQ
NGTB40N65IHL2WG IGBT Transistors 650V/40A FAST IGBT FSII T
NGTB40N65IHRWG IGBT Transistors 40A 650V MONOLITHIC RC IG
NGTB40N65IHRTG IGBT Transistors 650V/40A MONOLITHIC RC IG
ON Semiconductor
ON Semiconductor
NGTB40N65IHL2WG IGBT Transistors 650V/40A FAST IGBT FSII T
NGTB40N65IHRTG 650V/40A RC IGBT
NGTB40N65IHRWG IGBT FIELD STOP 650V 80A TO247
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